Datasheet irfm9140 Datasheet

POWER MOSFET
THRU-HOLE (TO-254AA)

Product Summary

Part Number RDS(on) ID

IRFM9140 0.20Ω -18A

PD - 90495E

IRFM9140

JANTX2N7236

JANTXV2N7236

REF:MIL-PRF-19500/595

100V, P-CHANNEL

HEXFET

®

MOSFET TECHNOLOGY

HEXFET

Rectifier’s advanced line of power MOSFET tr ansistors. The
efficient geometry design achieves very low on-state resis­tance combined with high transconductance. HEXFET tran­sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability . They are well-suited f or applications such as switch­ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The

HEXFET transistor’s totally isolated pac kage eliminates the

need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.

®

MOSFET technology is the key to International

TO-254AA

Features:

n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight

Absolute Maximum Ratings

Parameter Units

ID @ VGS = -10V, TC = 25°C Continuous Drain Current -18

ID @ VGS = -10V, TC = 100°C Continuous Drain Current -11

I

DM

PD @ TC = 25°C Max. Power Dissipation 125 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ -5.5

T

J

T

STG

Pulsed Drain Current ➀ -72

Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ -18 A
Repetitive Avalanche Energy ➀ 12.5 mJ

Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature
Weight 9.3 (typical) g

300 ( 0.063 in.(1.6mm) from case for 10s)

A

V/ns

o

C

For footnotes refer to the last page

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2/5/02

IRFM9140

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV
∆BV

R

V
g
I

I
I
Q
Q
Q
t
t
t

t

L

C
C
C

DSS

GSS
GSS

d(on)
r
d(off)
f

DSS

DSS

DS(on)

GS(th)

fs

g
gs
gd

S + LD

iss

oss
rss

Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA

/∆TJTemperature Coefficient of Breakdown — -0.087 — V/°C Reference to 25°C, ID = -1.0mA

Voltage
Static Drain-to-Source On-State — — 0.20 VGS = -10V, ID = -11A➃
Resistance — — 0.22 VGS = -10V, ID = -18A ➃
Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 6.2 — — S ( ) VDS > -15V, IDS = -11A➃
Zero Gate Voltage Drain Current — — -2 5 VDS= -80V, VGS= 0V

— — -250 VDS = -80V

Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS =20V
Total Gate Charge — — 60 VGS = -10V, ID= -18A
Gate-to-Source Charge — — 13 nC VDS = -50V
Gate-to-Drain (‘Miller’) Charge — — 35.2
Turn-On Delay Time — — 35 VDD = -50V, ID = -11A
Rise Time — — 85 RG =9.1Ω, VGS = -10V
Turn-Off Delay Time — — 85
Fall Time — — 65
Total Inductance — 6.8 —

Input Capacitance — 1400 VGS = 0V, VDS = -25V
Output Capacitance — 600 — pF f = 1.0MHz
Reverse Transfer Capacitance — 200 —

Ω

Ω

µA

VGS = 0V, TJ = 125°C

nA

ns

Measured from drain lead (6mm/

nH

0.25in. from package) to source lead
(6mm/0.25in. from package)

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — -1 8

S

I

Pulse Source Current (Body Diode) ➀ — — -72

SM

V

Diode Forward Voltage — — -4.2 V Tj = 25°C, IS = -18A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 280 nS Tj = 25°C, IF = -18A, di/dt ≤-100A/µs

rr

Q

Reverse Recovery Charge — — 3.6 µ c VDD ≤ -50V ➃

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

S

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thCS

R

thJA

For footnotes refer to the last page

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Junction-to-Case — — 1.0
Case-to-sink — 0.21 —
Junction to Ambient — — 48 Typical socket mount

°C/W

+ LD.

IRFM9140

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFM9140

13a & b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area

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IRFM9140

R

V

DS

V

GS

R

G

-10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

D

D.U.T.

-

+

V

DD

Fig 9. Maximum Drain Current Vs.

Case Temperature

V

GS

10%

90%
V

DS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFM9140

(BR)

L

D.U.T

I

AS

0.01

t

p

DRIVER

Ω

15V

V

DD

R

-10V

-20V

V

DS

G

Fig 12a. Unclamped Inductive Test Circuit

I

AS

t

p

V

DSS

Fig 12b. Unclamped Inductive Waveforms

A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

Q

G

-10V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

-10V

12V

V

GS

Fig 13b. Gate Charge Test Circuit

50KΩ

.2µF

.3µF

-3mA

Current Sampling Resistors

­V

DS

+

D.U.T.

I

G

I

D

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IRFM9140

Foot Notes:

➀ Repetitive Rating; Pulse width limited by

➂ I

maximum junction temperature.

➁ V

=-25V, starting TJ = 25°C, L = 3.1mH

DD

Peak IL = -18A, V

GS

= -10V

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — TO-254AA

3.78 [.149]

3.53 [.139]
A

17.40 [.685]

16.89 [.665]

123

C

3.81 [.150]
2X

NOTES :

1. DIMENSIONING & TOLERANC ING PER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES] .

3. CONTROLLING DIMENS ION: INCH.

4. CONFORMS TO JE DE C OUT LINE T O-254AA.

13.84 [.545]

13.59 [.535]

20.32 [.800]

20.07 [.790]

17.40 [.685]

16.89 [.665]

1.14 [.045]
3X

0.89 [.035]

0.36 [.014] B A

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

0.12 [.005]

1.27 [.050]

1.02 [.040]

B

0.84 [.033]
MAX.

3.81 [.150]

22.73 [.895]

21.21 [.835]

3.78 [.149]

3.53 [.139]

≤ -18A, di/dt ≤ −100A/µs,

SD

VDD≤ -100V, TJ ≤ 150°C

13.84 [.545]

123

13.59 [.535]

20.32 [.800]

20.07 [.790]

1.14 [.04 5 ]
3X

0.89 [.03 5 ]

0.36 [.014]

A

17.40 [.685]

16.89 [.665]

4.82 [.190]

3.81 [.150]

3.81 [.150]
2X

PIN ASS I GNMENTS

1 = DRAIN
2 = SOURCE
3 = GATE

BA

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

0.12 [.005]

1.27 [.050]

1.02 [.040]

B

R 1.52 [.060]

4.06 [.160]

3.56 [.140]

BERYLLIA WARNING PER MIL-PRF-19500

CAUTION

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 01/02

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