Datasheet irfm360 Datasheet

POWER MOSFET
THRU-HOLE (TO-254AA)

Product Summary

Part Number RDS(on) I D

IRFM360 0.20 Ω 23A

HEXFET

PD - 90712B

IRFM360

400V, N-CHANNEL

®

MOSFET TECHNOLOGY

HEXFET

Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re­sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan­tages of MOSFETs, such as voltage control, very fast switch­ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch­ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.

®

MOSFET technology is the key to International

TO-254AA

Features:

n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 23

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 14

I

DM

PD @ TC = 25°C Max. Power Dissipation 250 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 4.0

T

J

T

STG

Pulsed Drain Current ➀ 92

Linear Derating Factor 2.0 W/°C

Gate-to-Source Voltage ±20 V

Single Pulse Avalanche Energy ➁ 980 mJ

Avalanche Current ➀ 23 A

Repetitive Avalanche Energy ➀ 25 m J

Operating Junction -55 to 150

Storage Temperature Range

Lead Temperature
Weight 9.3 (Typical) g

300 ( 0.063 in.(1.6mm) from case for 10s)

A

V/ns

o

C

For footnotes refer to the last page

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2/11/02

IRFM360

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

LS + L

C

iss

C

oss

C

rss

DSS

D

Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.0mA

/∆TJTemperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0mA

Voltage
Static Drain-to-Source On-State — — 0.20 VGS = 10V, ID = 14A
Resistance — — 0.23 VGS = 10V, ID = 23A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 1.4 — — S ( )VDS > 15V, IDS = 14A ➃
Zero Gate Voltage Drain Current — — 25 VDS= 320V ,VGS=0V

— — 250 VDS = 320V,

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 210 VGS =10V, ID = 23A
Gate-to-Source Charge — — 28 nC VDS =200V
Gate-to-Drain (‘Miller’) Charge — — 120
Turn-On Delay Time — — 33 VDD = 200V, ID = 23A,
Rise Time — — 140 VGS =10V, RG = 2.35Ω
Turn-Off Delay Time — — 120
Fall Time — — 99
Total Inductance — 6.8 —

Input Capacitance — 4200 — VGS = 0V, VDS = 25V
Output Capacitance — 900 — pF f = 1.0MHz
Reverse Transfer Capacitance — 400 —

Ω

Ω

µA

nA

ns

Measured from drain lead (6mm/

nH

0.25in. from package) to source
lead (6mm/0.25in. from package)

➃

VGS = 0V, TJ = 125°C

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — 23

S

I

Pulse Source Current (Body Diode) ➀ —— 92

SM

V

Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 23A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 1000 nS Tj = 25°C, IF = 23A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 16 µC VDD ≤ 50V ➃

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

S

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thCS

R

thJA

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

2 www.irf.com

Junction-to-Case — — 0.5
Csae-to-sink — 0.21 —

Junction-to-Ambient — — 48 Typical socket mount

°C/W

+ LD.

IRFM360

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFM360

13a & b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area

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Fig 9. Maximum Drain Current Vs.

Case Temperature

IRFM360

R

D.U.T.

t

d(off)tf

D

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

+

V

DD

-

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFM360

A

15V

DRIVER

+

-

R

20V

10

V

DS

G

t

L

.

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR )D SS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

V

DD

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

10

12V

.2µF

.3µF

D.U.T.

+

V

DS

-

V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

GS

3mA

I

G

Current Sampling Resistors

I

D

Fig 13b. Gate Charge Test Circuit

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Footnotes:

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ V

= 50V, starting TJ = 25°C, L= 3.7mH

DD

Peak IL = 23A, VGS = 10V

➂ I

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — TO-254AA

≤ 23A, di/dt ≤ 170A/µs,

SD

VDD ≤ 400V, TJ ≤ 150°C

IRFM360

3.78 [.149]

3.53 [.139]

A

17.40 [.685]

16.89 [.665]

123

C

3.81 [.150]

2X

NOTE S:

1. DIMENS IONING & TOLER ANCING PER AS ME Y14.5M-1994.

2. ALL DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ].

3. CONTR OL LING DIME NSION: INCH.

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

13.84 [.545]

13.59 [.535]

20.32 [.800]

20.07 [.790]

17.40 [.685]

16.89 [.665]

1.14 [.045]
3X

0.89 [.035]

0.36 [.014] B A

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

0.12 [.005]

1.27 [.050]

1.02 [.040]

B

0.84 [.033]
MAX.

3.81 [.150]

22.73 [.895]

21.21 [.835]

3.78 [.149]

3.53 [.139]

A

17.40 [.685]

16.89 [.665]

4.82 [.190]

3.81 [.150]

3.81 [.150]

2X

PIN AS SIGNMENT S

1 = DRAIN
2 = SOUR CE
3 = GATE

123

13.84 [.545]

13.59 [.535]

20.32 [.800]

20.07 [.790]

1.14 [.045]

3X

0.89 [.035]

0.36 [.014]

BA

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

0.12 [.005]

1.27 [.050]

1.02 [.040]

B

R 1.52 [.060]

4.06 [.160]

3.56 [.140]

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 02/02

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