Datasheet IRFM260 Datasheet (International Rectifier)

Provisional Data Sheet No. PD-9.1388A

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REPETITIVE AVALANCHE AND dv/dt RATED IRFM260

HEXFET

®

TRANSISTOR

N-CHANNEL

200Volt, 0.060

ΩΩ

Ω, HEXFET

ΩΩ

HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET tran­sistors. The efficient geometry design achiev es very

Product Summary

Part Number BVDSS RDS(on) ID

IRFM260 200V 0.060Ω 35A*

low on-state resistance combined with high
transconductance.

HEXFET transistors also feature all of the well-es­tablished advantages of MOSFETs, such as volt­age control, very fast switching, ease of paralleling
and electrical parameter temperature stability . They
are well-suited for applications such as switching

Features:

n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelet

power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re­quired.

HEXFET transistor’s totally isolated package elimi­nates the need for additional isolating material be­tween the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.

Absolute Maximum Ratings

Parameter IRFM260 Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 35*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 28

I

DM

PD @ TC = 25°C Max. Power Dissipation 250 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  4.3

T

J

T

STG

Pulsed Drain Current  180

Linear Derating Factor 2.0 W/K 
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy  700 mJ
Avalanche Current  35 A
Repetitive Avalanche Energy  25 m J

Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature
Weight 9.3 (typical) g

300(0.063 in.(1.6mm) from case for 10s)

Pre-Radiation

A

V/ns

o

C

IRFM260

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

(on)

d

t

r

t

(off)

d

t

f

L

D

L

S

DSS

Drain-to-Source Breakdown Voltage 200 — — V VGS =0 V, ID = 1.0mA

/∆TJTemperature Coefficient of Breakdow n — 0.24 — V/°C Reference to 25°C, ID = 1.0mA

Voltage
Static Drain-to-Source — — 0.060 VGS = 10V, ID = 28A
On-State Resistance — — 0.068
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Tr ansconductance 22 — — S ( )VDS > 15V, IDS = 28A 
Zero Gate Voltage Drain Current — — 25 VDS= 0.8 x Max Rating,VGS=0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 20 V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 230 VGS = 10V, ID = 35A
Gate-to-Source Charge — — 40 nC VDS = Max Rating x 0.5
Gate-to-Drain (‘Miller’) Charge — — 110
Tur n-On Delay Time — — 29 VDD = 100V, ID = 35A,
Rise Time — — 120 RG = 2.35Ω
Tur n-Off Delay Time — — 110
Fall Time — — 92
Internal Drain Inductance — 8.7 —

Internal Source Inductance — 8.7 —

Ω

Ω

µA

nA

ns

Measured from drain lead,
6mm (0.25 in) from package
to center of die.

nH

Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.

VGS = 10V, ID = 35A

VGS = 0V, TJ = 125°C

Modified MOSFET
ing the internal inductances.

symbol show-



C

iss

C

oss

C

rss

Input Capacitance — 5100 — VGS = 0V, VDS = 25 V
Output Capacitance — 1100 — pF f = 1.0MHz
Reverse Transfer Capacitance — 280 —

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — 35*

S

I

Pulse Source Current (Body Diode)  — — 180

SM

V

Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 35A, VGS = 0V 

SD

t

Reverse Recovery Time — — 420 ns Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 4.9 µCV

RR

t

Forward Tu r n-On Time

on

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R
R

thCS
thJA

Junction-to-Case — — 0.50
Case-to-Sink — 0.21 — K/W  Mounting surface flat, smooth, and greased
Junction-to-Ambient — — 48 Typical socket mount

Modified MOSFET symbol

A

showing the integral reverse
p-n junction rectifier.

≤ 50V 

DD

IRFM260

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1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

10

4.5V

D

I , D rain-to-Sou rce C urrent (A )

20µs PULSE WIDTH
T = 25°C

1

0.1 1 10 100

V , D rain-to-Source Voltage (V)

DS

C

Fig 1. Typical Output Characteristics,

TJ = 25oC

1000

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

10

D

I , Dra in -to-S ource C urrent (A)

4.5V

20µs PU LSE WIDTH
T = 150°C

A

1

0.1 1 10 100

V , Drain-to-So urc e V oltag e (V)

DS

J

A

Fig 2. Typical Output Characteristics,

TJ = 150oC

2.5

I = 46A

D

2.0

100

T = 150°C

J

T = 25°C

10

D

I , Dr a in - to -S ou rce Cu r ren t (A)

1

45678910

V , Ga te-to-S o urce Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.5

J

1.0

(No rm alized)

0.5

V = 50V

DS

20µs PULSE W ID TH

A

DS(on)

R , D rain -to-S o urc e O n Re si stan ce

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Ju nc tio n T em peratu re ( °C )

J

V = 10 V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature

IRFM260

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12000

10000

8000

6000

4000

C, C apac itance (pF)

2000

0

1 10 100

V = 0 V , f = 1 M H z

GS

C = C + C , C S H O R T ED

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C

rs s

V , Dra in-to-So urc e V olta ge (V )

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I = 35A

D

V = 16 0 V

DS

V = 10 0 V

DS

V = 40 V

DS

V , G ate- to -S ou rce V oltage (V )

16

12

GS

8

4

FOR TEST CIRCUIT

A

0

0 50 100 150 200 250

Q , Tota l Gate Ch arge (nC )

G

SEE FIGURE 13

A

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

O PERATION IN THIS AREA L IMITE D
BY R

DS(on)

100

T = 150°C

J

10

SD

I , Rev ers e Dr ain C u rren t (A)

1

0.0 1.0 2.0 3.0 4.0

V , Source-to-Drain Voltage (V)

SD

Fig 7. Typical Source-Drain Diode

Forward Voltage

T = 25°C

J

V = 0V

GS

100

10

D

I , Dra in C ur rent (A )

T = 2 5°C

C

T = 1 50° C

J

A

Single Pulse

1

1 10 100 1000

V , Drain-to-So urc e Vo ltag e (V)

DS

10µs

100µs

1ms

10ms

A

Fig 8. Maximum Safe Operating Area

IRFM260

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R

D.U.T.

D

+

V

-

DD

V

DS

V

50

LIMITED BY PACKAGE

40

GS

R

G

10V

Pulse Width ≤ 1 µs

30

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

20

D

I , D rain C urrent (Amp s)

10

V

DS

90%

0

25 50 75 100 125 150

T , C as e Temp er a tur e (°C )

C

Fig 9. Maximum Drain Current Vs.

A

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

Case Temperature

1

D = 0.50

thJC

0.20

0.1

0.10

0.05

0.02

0.01

Therm al Response (Z )

0.001

0.01
SINGLE PULSE

(THERMAL RESPONSE )

Notes :

1. Duty factor D = t / t

2. Peak T = P x Z + T

J

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Re ctangular Pulse Duration (sec)

1

DM

P

12

thJC

DM

t

1

t

2

C

A

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFM260

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15V

DRIVER

+

-

R

20V

V

DS

G

t

L

D.U.T

I

AS

Ω

0.01

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

1600

1200

800

V

DD

A

400

AS

E , S in gle Pu lse Ava lanche E nerg y (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature (°C)

J

I
TOP 16 A
22 A
B OTTOM 35A

D

A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

10 V

Q

GS

V

G

Fig 13a. Basic Gate Charge Waveform

Q

G

Q

GD

Charge

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

V

GS

.3µF

3mA

I

G

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

D.U.T.

I

D

+

V

DS

-

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Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

controlled by Duty Factor "D"

• I

SD

• D.U.T. - Device Under Test

Period

-

D =



G

P.W.

Period

+

+

V

DD

-

VGS=10V

*

Re-Applied
Voltage

Reverse
Recovery
Current

D.U.T. ISDWaveform

Body Diode Forward

Current

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

Diode Recovery

dv/dt

Fig 14. For N-Channel HEXFETS

di/dt

V

DD

I

SD

IRFM260

W

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Case Outline and Dimensions  TO-254AA

-B-

1.2 7 ( .0 50 )

1.0 2 ( .0 40 )

.12 ( .00 5 )

LEGEND
1 - COLLECTOR
2 - EMITTER
3 - GATE

3.81 ( .150 )

21.98 ( .865 )

20.95 ( .825 )

NOTES :

1. DIME NSIONING & TOLERANCING PER ANSI Y14.5M-1982.

2. ALL DIMEN SIONS AR E SH OWN IN MIL LIMETERS ( INC HES ).

3. LEADFORM IS AVAILABLE IN EITHER ORIENTATION :

3.1 EXAMPLE : IRFM4 500

3.2 EXAMPLE : IRFM4 50U

1 2 3

13.84 ( .545 )

13.59 ( .535 )

20.32 ( .800 )

20.07 ( .790 )

-C-

1. 14 ( .045 )

3X

0. 89 ( .035 )

.50 ( .0 2 0 ) M C A M B
.25 ( .0 1 0 ) M C

6.60 ( .260 )

6.32 ( .249 )

13.84 ( .545 )

13.59 ( .535 )

3.78 ( .149 )

3.53 ( .139 )

-A-

17.40 ( .685 )

16.89 ( .665 )

31.40 ( 1.235 )

30.39 ( 1.199 )

3. 81 ( .150 )
2X

NOTE S:

1. DIMENSIONING & TOLERA NCING PER ANSI Y14.5M, 1982.

2. ALL DIMENSIONS ARE SHOWN IN MILL IMETERS ( INCHES ).

Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and ( Inches )

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sand­blasted, machined, or have other operations perfomed on
them which will produce beryllia or beryllium dust. Fur­thermore, beryllium oxide packages shall not be placed in
acids that will produce fumes containing beryllium.

3. 78 ( .149 )

3. 53 ( .139 )

-A-

17 .40 ( .6 85 )
16 .89 ( .6 65 )

3.81 ( .150 )
2X

1 2 3

13.84 ( .545 )

13.59 ( .535 )

20.32 ( .800 )

20.07 ( .790 )

-C-

1. 14 ( .045 )

3X

0. 89 ( .035 )

.50 ( .020 ) M C A M B
.25 ( .010 ) M C

.12 ( .005 )

3.2 3.1

LEGEND
1 - COLLECTOR
2 - EMITTER
3 - GATE

-B-

1. 27 ( .050 )

1. 02 ( .040 )

M IN.

4.83 ( .190 )

3.81 ( .150 )

6.60 ( .260 )

6.32 ( .249 )

13.84 ( .54 5 )

13.59 ( .53 5 ) 1.5 2 ( .060 ) R

4.01 ( .158 )

3.61 ( .142 )

Notes:

Repetitive Rating; Pulse width limited by



maximum junction temperature.
Refer to current HEXFET reliability report.

 Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

current limited by pin diamete ( Die Current = 46A )

* I

D

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]

 I

≤ 35A, di/dt ≤ 130 A/µs,

 @ V

= 50 V, Starting TJ = 25°C,

DD

EAS = [0.5 * L * (I

2

) ]

L

Peak IL = 35A, VGS =10 V, 25 ≤ RG ≤ 200Ω

SD

VDD ≤ BV

DSS

Suggested R

, TJ ≤ 150°C

= 2.35Ω

G

 K/W = °C/W

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

http://www.irf.com/ Data and specifications subject to change without notice. 7/96