Page 1
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on) ID
IRFM064 0.017 Ω 35A*
HEXFET
PD - 90875A
IRFM064
60V, N-CHANNEL
®
MOSFET TECHNOLOGY
HEXFET
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature
stability . They are well-suited f or applications such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
®
MOSFET technology is the key to International
TO-254AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 35*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 35*
I
DM
PD @ TC = 25°C Max. Power Dissipation 250 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 4.5
T
J
T
STG
Pulsed Drain Current ➀ 380
Linear Derating Factor 2.0 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 620 mJ
Avalanche Current ➀ —A
Repetitive Avalanche Energy ➀ —mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature
Weight 9.3 (Typical) g
300 ( 0.063 in.(1.6mm) from case for 10s)
A
V/ns
o
C
*Current is limited by pin diameter
For footnotes refer to the last page
www.irf.com 1
1/29/02
Page 2
IRFM064
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
C
iss
C
oss
C
rss
DSS
D
Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.048 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.017 VGS = 10V, ID = 35A
Resistance
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 21 — — S ( )VDS > 15V, IDS = 35A ➃
Zero Gate Voltage Drain Current — — 25 VDS= 48V ,VGS=0V
— — 250 VDS = 48V,
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 240 VGS =10V, ID = 35A
Gate-to-Source Charge — — 53 nC VDS = 30V
Gate-to-Drain (‘Miller’) Charge — — 78
Turn-On Delay Time — — 27 VDD = 30V, ID = 35A,
Rise Time — — 120 VGS =10V, RG = 2.35Ω
Turn-Off Delay Time — — 76
Fall Time — — 93
Total Inductance — 6.8 —
Input Capacitance — 7400 — VGS = 0V, VDS = 25V
Output Capacitance — 3200 — pF f = 1.0MHz
Reverse Transfer Capacitance — 540 —
Ω
Ω
µA
nA
ns
Measured from drain lead (6mm/
nH
0.25in. from package) to source lead
(6mm/0.25in. from package)
➃
VGS = 0V, TJ = 125°C
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
I
Continuous Source Current (Body Diode) — — 35*
S
I
Pulse Source Current (Body Diode) ➀ — — 380
SM
V
Diode Forward Voltage — — 3.0 V Tj = 25°C, IS = 35A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 220 nS Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 1.1 µC VDD ≤ 50V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
*Current is limited by pin diameter
A
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJCS
R
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 0.5
Case-to-Sink — 0.21 —
Junction-to-Ambient — — 48 Typical socket mount
°C/W
+ LD.
S
Page 3
IRFM064
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com 3
Page 4
IRFM064
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
4 www.irf.com
Page 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFM064
R
D.U.T.
t
d(off)tf
D
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
+
V
DD
-
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com 5
Page 6
IRFM064
A
15V
DRIVER
+
-
R
V
G
20V
1
DS
L
.
D.U.T
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR )DS S
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
Q
GD
V
DD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
0
.3µF
D.U.T.
+
V
DS
-
V
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
GS
3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
Page 7
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ V
= 25V, starting TJ = 25°C, L=1.0mH
DD
Peak IL = 35A, VGS = 10V
➂ I
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — T O-254AA
≤ 35A, di/dt ≤ 300A/µs,
SD
VDD ≤ 60V, TJ ≤ 125°C
IRFM064
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
3.81 [.150]
13.84 [.545]
13.59 [.535]
A
20.32 [.800]
20.07 [.790]
123
C
2X
17.40 [.685]
16.89 [.665]
1.14 [.045]
3X
0.89 [.035]
0.36 [.014] B A
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS A RE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
4. CONFORMS TO JEDEC OUTLINE T O-254AA.
0.12 [.005]
1.27 [.050]
1.02 [.040]
B
0.84 [.033]
MAX.
3.81 [.150]
22.73 [.895]
21.21 [.835]
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
4.82 [.190]
3.81 [.150]
3.81 [.150]
BA
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
123
13.59 [.535]
20.32 [.800]
20.07 [.790]
1.14 [.04 5 ]
3X
0.89 [.03 5 ]
0.36 [.014]
A
2X
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
0.12 [.005]
1.27 [.050]
1.02 [.040]
B
R 1.52 [.060]
4.06 [.160]
3.56 [.140]
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/02
www.irf.com 7
Loading...