Datasheet irfl4315 Datasheet

PD - 94445

SMPS MOSFET

IRFL4315

HEXFET® Power MOSFET

Applications

l High frequency DC-DC converters

V

DSS

150V 185m

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

to Simplify Design, (See

OSS

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.1 A I

DM

PD @TA = 25°C Power Dissipation 2.8 W

V

GS

dv/dt Peak Diode Recovery dv/dt  6.3 V/ns T

J

T

STG

Pulsed Drain Current  21

Linear Derating Factor 0.02 W/°C Gate-to-Source Voltage ± 30 V

Operating Junction and -55 to + 150 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

R

DS(on)

ΩΩ

Ω@V

ΩΩ

max I

= 10V 2.6A

GS

SOT-223

D

°C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJA

Junction-to-Ambient (PCB Mount, steady state) ––– 45 °C/W

Notes  through  are on page 8

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06/14/02

IRFL4315

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 98 ––– VGS = 0V, VDS = 0V to 120V 

oss

Drain-to-Source Breakdown Voltage 150 ––– – –– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA  Static Drain-to-Source On-Resistance ––– ––– 185 mΩ VGS = 10V, ID = 1.6A  Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 V Gate-to-Source Reverse Leakage ––– ––– -100

µA

nA

V

= 150V, VGS = 0V

DS

= 30V

GS

V

= -30V

GS

Parameter Min. Typ. Max. Units Conditions Forward Transconductance 3.5 ––– ––– S VDS = 50V, ID = 1.6A Total Gate Charge ––– 12 19 ID = 1.6A Gate-to-Source Charge ––– 2.1 3.1 nC VDS = 120V Gate-to-Drain ("Miller") Charge ––– 6.8 10 VGS = 10V Turn-On Delay Time ––– 8.4 ––– VDD = 75V Rise Time ––– 21 ––– ID = 1.6A Turn-Off Delay Time ––– 20 ––– RG = 15Ω

ns

Fall Time ––– 19 ––– VGS = 10V  Input Capacitance ––– 420 ––– VGS = 0V Output Capacitance ––– 100 ––– VDS = 25V Reverse Transfer Capacitance ––– 25 ––– pF ƒ = 1.0MHz Output Capacitance ––– 720 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Output Capacitance ––– 48 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz

Avalanche Characteristics

Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 38 mJ Avalanche Current ––– 3.1 A

Diode Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

2.6

21

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 2.1A, VGS = 0V  Reverse Recovery Time ––– 61 91 ns TJ = 25°C, IF = 1.6A Reverse RecoveryCharge ––– 160 240 nC di/dt = 100A/µs



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D

S

IRFL4315

(

)

100

10

1

0.1

, Drain-to-Source Current (A)

D

I

VGS TOP 15V 12V 10V

8.0V

7.0V

6.5V

6.0V BOTTOM 5.5V

5.5V

20µs PULSE WIDTH Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

100.00

100

10

VGS TOP 15V 12V 10V

8.0V

7.0V

6.5V

6.0V BOTTOM 5.5V

5.5V

1

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH Tj = 150°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

2.6A

I =



D

)

(Α

10.00

, Drain-to-Source Current

D

I

1.00

TJ = 150°C

TJ = 25°C

V

= 50V

DS

20µs PULSE WIDTH

5.0 6.0 7.0 8.0 9.0 10.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature

J

Fig 4. Normalized On-Resistance

V =

10V



GS

°

C

Vs. Temperature

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IRFL4315

10000

1000

100

C, Capacitance(pF)

10

1 10 100 1000

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

C C

iss rss oss

SHORTED

ds

gd

C

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

12

ID= 1.6A

10

VDS= 120V VDS= 75V

8

VDS= 30V

6

4

, Gate-to-Source Voltage (V)

GS

2

V

FOR TEST CIRCUIT SEE FIGURE 13

0

02468101214

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

°

T = 150 C



J

10

100µsec

°

T = 25 C



1

J

1

1msec

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.0 0.5 1.0 1.5 2.0 2.5

V ,Source-to-Drain Voltage (V)

SD



Fig 7. Typical Source-Drain Diode

GS

, Drain-to-Source Current (A)

D

Tc = 25°C

I

Tj = 150°C Single Pulse

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

10msec

Forward Voltage

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IRFL4315

+

-

3.0

2.5

2.0

1.5

1.0

D

I , Drain Current (A)

0.5

0.0 25 50 75 100 125 150

TA , Ambient Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

100

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

D = 0.50

thJA

10

0.20

0.10

0.05 P

0.02

1

0.01

Thermal Response (Z )

SINGLE PULSE

(THERMAL RESPONSE)



0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

J DM thJA A

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFL4315

(BR)

A

)

240

Ω

220

200

V

180

GS

= 10V

160

140

, Drain-to-Source On Resistance (m

120

DS (on)

100

R

0 5 10 15 20 25

ID , Drain Current (A)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

V

GS

+

V

DS

-

I

D

V

G

QGSQ

Q

G

GD

Charge

)

4000

Ω

3500

3000

2500

2000

1500

1000

, Drain-to -Source On Resistance (m

ID = 2.6A

500

DS(on)

0

R

4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0

V

Gate -to -Source Voltage (V)

GS,

Fig 13. On-Resistance Vs. Gate Voltage

100

TOP

80



BOTTOM

I

D

1.4A

2.5A

3.1A

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

15V

V

t

p

I

AS

DSS

V

R

G

20V

L

DS

D.U.T

I

AS

Ω

0.01

t

p

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

DRIVER

+

V

DD

-

60

40

20

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting Tj, Junction Temperature ( C)

°

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

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Package Outline

)

SOT-223 (TO-261AA) Outline

IRFL4315

Part Marking Information

SOT-223

www.irf.com 7

EX AMPLE : T H IS IS AN IRFL 014

FL014 INTERN ATIONA L R ECTIFIER

L OG O

314

TOP

PART NU MBE R

DATE CODE (YW W Y = LAST D IGIT OF THE YE AR WW = WEEK

W AF E R L OT C OD E

XXXXXX

BOTTOM

IRFL4315

)

(

)

(

)

Tape & Reel Information

SOT-223 Outline

TR

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION: MILLIMETER.

2. OUTLINE CONFO RMS TO EIA-481 & EIA-541.

3. EACH O330.00

13.00) REEL CONTAINS 2,500 DEVICES.

2.05 (.080

1.95 (.077

12.10 (.475

11.90 (.469

13.20 (.519

12.80 (.504

4.10 (.161

3.90 (.154

1.85 (.072

1.65 (.065

7.55 (.297

7.45 (.294

1.60 (.062

1.50 (.059 TYP.

7.10 (.279

6.90 (.272

15.40 (.607

11.90 (.469

4

7.60 (.299

7.40 (.292

0.35 (.013

0.25 (.010

16.30 (.641

15.70 (.619

2.30 (.090

2.10 (.083

330.00

13.000

MAX.

NOTES :

1. OUTLINE COMFORMS TO EIA-418-1.

2. CONTROLLING DIMENSION: MILLIMETER..

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

14.40 (.566

12.40 (.488

3

50.00 (1.969 MIN.

18.40 (.724 MAX .

4

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 7.8mH

J

= 3.1A.

AS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

 I

TJ ≤ 150°C.

while V

oss

≤ 1.6A, di/dt ≤ 230A/µs, V

SD

is rising from 0 to 80% V

DS

DD

≤ V

(BR)DSS

DSS.

,

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/02

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