Datasheet irfl214pbf Datasheet

PD-95318

S

D

G

SOT-223

Document Number: 91194

www.vishay.com

1

IRFL214PbF

HEXFET® Power MOSFET

 Surface Mount
 Available in Tape & Reel
 Dynamic dv/dt Rating
 Repetitive Avalanche Rated
 Fast Switching
 Ease of Paralleling
 Simple Drive Requirements
 Lead-Free

Description

Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.

The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and­place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.

Absolute Maximum Ratings

Parameter Max. Units

ID @ Tc = 25°C Continuous Drain Current, VGS @ 10 V 0.79
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10 V 0.50
I

DM

PD @Tc = 25°C Power Dissipation 3.1
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.0 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  4.8 V/ns
T

J, TSTG

Pulsed Drain Current  6.3

Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)** 0.017 W/°C
Gate-to-Source Voltage -/+20 V
Single Pulse Avalanche Energy 50 mJ
Avalanche Current 0.79 A
Repetitive Avalanche Energy 0.31 mJ

Junction and Storage Temperature Range -55 to + 150

Soldewring Temperature, for 10 seconds

300 (1.6mm from case)

V

= 250V

DSS

R

DS(on)

ID = 0.79A

= 2.0Ω

°C

A

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.

Junction-to-PCB ––– 40
Junction-to-Ambient. (PCB Mount)** ––– 60

°C/W

05/26/04

IRFL214PbF

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D

Document Number: 91194

www.vishay.com

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

tf Fall Time ––– 7.0 ––– RD = 45 Ω, See Fig. 10 

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.39 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 2.0 Ω VGS = 10V, ID = 0.47A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 0.50 ––– ––– S VDS = 50V, ID = 0.47 A 

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 V
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

VDS = 250V, VGS = 0V

µA

nA

= 200V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

Total Gate Charge ––– ––– 8.2 ID = 2.7A
Gate-to-Source Charge ––– ––– 1.8 nC VDS = 200V
Gate-to-Drain ("Miller") Charge ––– ––– 4.5 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 7.0 ––– VDD = 125V
Rise Time ––– 7.6 –––
Turn-Off Delay Time ––– 16 ––– RG = 24 Ω

Internal Drain Inductance

Internal Source Inductance

––– 4.0 –––

––– 6.0 –––

ID = 2.7A

ns

Between lead, 6mm(0.25in)

nH

from package and center
of die contact.

Input Capacitance ––– 140 ––– VGS = 0V
Output Capacitance ––– 42 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 9.6 ––– ƒ = 1.0MHz, See Fig. 5

G

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

DD=

RG = 25Ω, I

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– –––

–––

Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 0.79A, VGS = 0V 
Reverse Recovery Time ––– 190 390 ns TJ = 25°C, IF = 2.7A
Reverse RecoveryCharge ––– 0.64 1.3 µC di/dt = 100A/µs 
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 I

≤ 2.7A, di/dt ≤ 65A/µs, V

SD

TJ ≤ 150°C

50V, starting TJ = 25°C, L =128 mH

= 0.79. (See Figure 12)

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

–––

0.79

6.3

A

DD

≤ V

(BR)DSS

,

IRFL214PbF

Document Number: 91194

www.vishay.com

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IRFL214PbF

Document Number: 91194

www.vishay.com

4

IRFL214PbF

Document Number: 91194

www.vishay.com

5

IRFL214PbF

Document Number: 91194

www.vishay.com

6

IRFL214PbF

Document Number: 91194

www.vishay.com

7

IRFL214PbF

Document Number: 91194

www.vishay.com

8

SOT-223 (TO-261AA) Package Outline

Dimensions are shown in milimeters (inches)

SOT-223 (TO-261AA) Part Marking Information

HEXFET PRODUCT MARKING

THIS IS AN IRFL0 14

INTERNATIONAL

RECTIFIER

LOGO 314P

FL014

TOP

PART NUMBER

DATE CODE
(YY WW)
YY = YEAR
WW = WEEK
P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

LOT CODE

A = ASSEMBLY SITE

CODE

AXXXX

BOTTOM

SOT-223 (TO-261AA) Tape & Reel Information

)
)

Document Number: 91194

www.vishay.com

9

Dimensions are shown in milimeters (inches)

IRFL214PbF

4.10 (.161)

2.05 (.080)

330.00
(13.000)
MAX.

1.95 (.077)

12.10 (.475)

11.90 (.469)

13.20 (.519)

12.80 (.504)

TR

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION: MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

3.90 (.154)

1.85 (.072)

1.65 (.065)

7.55 (.297)

7.45 (.294)

1.60 (.062)

1.50 (.059)
TYP.

7.10 (.279)

6.90 (.272)

15.40 (.607)

11.90 (.469)

4

7.60 (.299)

7.40 (.292)

0.35 (.013)

0.25 (.010)

50.00 (1.969)
MIN.

16.30 (.641

15.70 (.619

2.30 (.090)

2.10 (.083)

NOTES :

1. OUTLINE COMFORMS TO EIA-418-1.

2. CONTROLLING DIMENSION: MILLIMETER..

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

14.40 (.566)

12.40 (.488)

3

18.40 (.724)
MAX.

4

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

05/04

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1