Datasheet IRFL024N Datasheet (International Rectifier)

PD - 91861A

IRFL024N

HEXFET® Power MOSFET

l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

G

D

R

S

SOT -223

V

DSS

DS(on)

ID = 2.8A

= 55V

= 0.075Ω

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 4.0 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 2.8 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 2.3 I

DM

PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J, TSTG

Pulsed Drain Current  11.2

Linear Derating Factor (PCB Mount)* 8.3 mW/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy 214 mJ Avalanche Current 2.8 A Repetitive Avalanche Energy* 0.1 mJ

Junction and Storage Temperature Range -55 to + 150 °C

A

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

R

θJA

* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Junction-to-Amb. (PCB Mount, steady state)* 90 120 Junction-to-Amb. (PCB Mount, steady state)** 50 60

°C/W

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6/15/99

IRFL024N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.075 Ω VGS = 10V, ID = 2.8A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 3.0 ––– ––– S VDS = 25V, ID = 1.68A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 55V, VGS = 0V

µA

nA

VGS = -20V Total Gate Charge ––– ––– 18.3 ID = 1.68A Gate-to-Source Charge ––– ––– 3.0 nC VDS = 44V Gate-to-Drain ("Miller") Charge ––– ––– 7.7 VGS = 10V, See Fig. 6 and 9  Turn-On Delay Time ––– 8.1 ––– VDD = 28V Rise Time ––– 13.4 ––– ID = 1.68A Turn-Off Delay Time ––– 22.2 ––– RG = 24Ω

ns

Fall Time ––– 17.7 ––– RD = 17Ω, See Fig. 10  Input Capacitance ––– 400 ––– VGS = 0V Output Capacitance ––– 145 –– – pF VDS = 25V Reverse Transfer Capacitance ––– 60 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

––– –––

–––

2.8 A

11.2

Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS =1.68A, VGS = 0V  Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 1.68A Reverse RecoveryCharge ––– 50 75 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

= 25°C, L = 54.7 mH

J

= 2.8A. (See Figure 12)

AS

 I

≤ 1.68A, di/dt ≤ 155A/µs, V

SD

DD

≤ V

TJ ≤ 150°C

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

(BR)DSS

,

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IRFL024N

100

10

TOP

BOTTOM

VGS 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

1

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics,

100

10

TOP

BOTTOM

VGS 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

1

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 150 C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output Characteristics,

2.0

I =

D

2.8A

1.5

10

°

T = 150 C

J

1.0

(Normalized)

D

I , Drain-to-Source Current (A)

1

4.5 5.0 5.5 6.0 6.5

°

T = 25 C

J

V = 25V

DS

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRFL024N

700

600

500

400

300

C, Capacitance (pF)

200

100

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C C C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I =

1.68 A

D

15

10

5

GS

V , Gate-to-Source Voltage (V)

0

0 5 10 15 20

Q , Total Gate Charge (nC)

G

V = 44V

DS

V = 27V

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

10

1

°

T = 150 C

SD

I , Reverse Drain Current (A)

J

0.1

0.2 0.4 0.6 0.8 1.0 1.2

V ,Source-to-Drain Voltage (V)

SD

°

T = 25 C

J

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

10

1

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C Single Pulse

0.1

0.1 1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

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10V

)

V

IRFL024N

R

D.U.T.

D

+

V

-

DD

V

Q

G

Q

GS

Q

GD

R

DS

V

GS

G

10V

Pulse Width ≤ 1 µs

Charge

Duty Factor ≤ 0.1 %

Fig 9a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

D.U.T.

+

V

DS

-

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

3mA

I

G

Current Sampling Resistors

I

D

Fig 9b. Gate Charge Test Circuit

1000

100

thJC

D = 0.50

0.20

0.10

10

0.05

0.02

0.01

1

Thermal Response (Z )

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec

1

V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

P

DM

t

1

t

2

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRFL024N

A

15V

DRIVE R

+

-

V

DD

R

V

G

10V

DS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

500

TOP

400

300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

D

1.3A

2.2A

2.8A

°

I

AS

Fig 12b. Unclamped Inductive Waveforms

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Package Outline

SOT-223 (TO-261AA) Outline

IRFL024N

Part Marking Information

SOT-223

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EX AM P LE : TH IS IS A N IRFL 01 4

FL014 INTERNA TIONAL R EC T IFIE R

L OG O

314

TOP

PART NU MBE R

DATE CODE (YWW ) Y = LAST D IGIT OF THE YEAR WW = WEEK

W AF ER L OT C OD E

XXXXXX

BOTTOM

IRFL024N

Tape & Reel Information

SOT-223 Outline

4.10 (.161)

2.05 (.080)

330.00 (13.000) MAX.

1.95 (.077)

12.10 (.475)

11.90 (.469)

13.20 (.51 9)

12.80 (.50 4)

TR

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION: MILLIMETER.

2. OUTLINE CONFO R M S TO E IA-481 & EIA-541.

3. EACH O 330.00 (13.0 0) REEL C ONTAINS 2,500 DE VICES.

3.90 (.154)

1.85 (.072)

1.65 (.065)

7.55 (.297)

7.45 (.294)

1.60 (.062)

1.50 (.059) TY P .

7.10 (.279)

6.90 (.272)

15.40 (.607)

11.90 (.469)

4

7.60 (.299)

7.40 (.292)

0.35 (.013)

0.25 (.010)

16.30 (.641)

15.70 (.619)

2.30 (.090)

2.10 (.083)

50.00 (1.969) MIN.

NOTES :

1. OUTLINE CO M FO R M S TO E IA-418-1.

2. CO NTRO LLING DIMENSIO N: MILLIMETER..

3. DIMENSIO N MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

14.40 (.566)

12.40 (.488)

3

18.40 (.724) M A X .

4

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http://www.irf.com/ Data and specifications subject to change without notice. 6/99

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