Datasheet IRFL014NPBF Datasheet

S

D

G

l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free

Description

Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

®

power MOSFETs are well

PD- 95352

IRFL014NPbF

HEXFET® Power MOSFET

V

= 55V

DSS

R

SOT-223

= 0.16Ω

DS(on)

ID = 1.9A

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.7 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 1.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.5 I

DM

PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J, TSTG

Pulsed Drain Current  15

Linear Derating Factor (PCB Mount)* 8.3 mW/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy 48 mJ Avalanche Current 1.7 A Repetitive Avalanche Energy* 0.1 mJ

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

R

θJA

* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Junction-to-Amb. (PCB Mount, steady state)* 90 120 Junction-to-Amb. (PCB Mount, steady state)** 50 60

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A

°C/W

06/07/04

IRFL014NPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– –– – 0.16 Ω VGS = 10V, ID = 1.9A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 1.6 ––– ––– S VDS = 25V, ID = 0.85A

Drain-to-Source Leakage Current

––– ––– 1.0

––– ––– 25 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 10 0 V Gate-to-Source Reverse Leakage ––– ––– -100

µA

nA

V

= 44V, VGS = 0V

DS

= 20V

GS

VGS = -20V Total Gate Charge ––– 7.0 11 ID = 1.7A Gate-to-Source Charge ––– 1.2 1. 8 nC VDS = 44V Gate-to-Drain ("Miller") Charge ––– 3.3 5.0 VGS = 10V, See Fig. 6 and 13  Turn-On Delay Time ––– 6 .6 ––– VDD = 28V Rise Time ––– 7. 1 ––– ID = 1.7A Turn-Off Delay Time ––– 12 ––– RG = 6.0Ω

ns

Fall Time ––– 3.3 ––– RD = 16Ω, See Fig. 10  Input Capacitance ––– 190 ––– VGS = 0V Output Capacitance ––– 72 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 33 –– – ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

 

  15

1.3 A

Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V  Reverse Recovery Time ––– 41 61 n s TJ = 25°C, IF = 1.7A Reverse RecoveryCharge ––– 64 95 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

= 25V, starting TJ = 25°C, L = 8.2mH

DD

RG = 25Ω, I

= 3.4A. (See Figure 12)

AS

 I

≤ 1.7A, di/dt ≤ 250A/µs, V

SD

DD

≤ V

(BR)DSS

TJ ≤ 150°C

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

,

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IRFL014NPbF

A

100

VGS TOP 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

10

1

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH T = 25°C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

C

Fig 1. Typical Output Characteristics

100

VGS TOP 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

10

1

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH T = 150°C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output Characteristics

2.0

I = 1.7A

D

1.5

10

T = 150°C

J

T = 25°C

1

D

I , Drain-to-Source Current (A)

0.1 456789

J

V = 25V

DS

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V )

GS

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

J

Fig 4. Normalized On-Resistance

V = 10V

GS

Vs. Temperature

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IRFL014NPbF

A

4

A

350

300

250

200

150

C, Capacitance (pF)

100

50

0

1 10 100

V = 0V, f = 1MHz

GS

C = C + C , C SHORTED

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I = 1.7A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

V = 44V

DS

V = 28V

DS

V = 11V

DS

FOR TEST CIRCUIT

0

0246810

Q , Total Gate Charge (nC)

G

SEE FIGURE 9

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED BY R

DS(on)

10

T = 150°C

J

T = 25°C

J

1

SD

I , Reverse Drain Current (A)

0.1

0.4 0.6 0.8 1.0 1.2 1.

V , Source-to-Drain Voltage (V)

SD

Fig 7. Typical Source-Drain Diode

V = 0V

GS

10

1

D

I , Drain Current (A)

T = 25°C

A

T = 150°C

J

Sing le Pul se

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

100µs

1ms

10ms

Forward Voltage

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+

-

10V

V

S

Current Regulator

V 9

1 V

IRFL014NPbF

R

D.U.T.

D

V

DD

V

Q

G

Q

GS

Q

GD

R

DS

V

GS

G

10V

Pulse Width ≤ 1 µs

Charge

Duty Factor ≤ 0.1 %

Fig 9a. Basic Gate Charge Waveform

Same Type as D.U.T.

Fig 10a. Switching Time Test Circuit

DS

12V

.2µF

50KΩ

.3µF

D.U.T.

+

V

D

-

0%

V

GS

3mA

I

G

Current Sampling Resistors

I

D

Fig 9b. Gate Charge Test Circuit

1000

100

thJA

D = 0.50

0.20

0.10

10

0.05

0.02

0.01

1

Thermal Response (Z )

SINGLE PULSE (THERMAL RESPONSE )

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t , Rectangular Pulse Duration (sec)

1

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

P

DM

t

1

t

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

12

DM

J

thJA

2

A

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

A

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IRFL014NPbF

I

A

0

A

15V

DRIVER

+

-

V

DD

R

G

20V

V

DS

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

120

100

80

60

40

20

AS

V = 25V

E , Single Pulse Avalanche Energy (mJ)

DD

0

25 50 75 100 125 15

Starting T , Junction Temperature (°C)

J

I TOP 1.5A

2.7A BOTTOM 3.4A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D

AS

Fig 12b. Unclamped Inductive Waveforms

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SOT-223 (TO-261AA) Package Outline

Dimensions are shown in milimeters (inches)

IRFL014NPbF

SOT-223 (TO-261AA) Part Marking Information

HEXFET PRODUCT MARKING

THIS IS AN IRFL01 4

INTERNATIONAL

RECTIFIER

LOGO

FL014

314P

TOP

PART NUM BER

DATE CODE (YYWW) YY = YEAR WW = WE E K

P = DES IGNAT E S L E AD- F RE E

PRODUCT (OPTIONAL)

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LOT CODE

A = ASSEMBLY SITE

CODE

AXX XX

BOTTOM

IRFL014NPbF

) )

SOT-223 (TO-261AA) Tape & Reel Information

Dimensions are shown in milimeters (inches)

4.10 (.161)

2.05 (.080)

330.00 (13.000) MAX.

1.95 (.077)

12.10 (.475)

11.90 (.469)

13.20 (.519)

12.80 (.504)

TR

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION: MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

3.90 (.154)

1.85 (.072)

1.65 (.065)

7.55 (.297)

7.45 (.294)

1.60 (.062)

1.50 (.059) TYP.

7.10 (.279)

6.90 (.272)

15.40 (.607)

11.90 (.469)

4

7.60 (.299)

7.40 (.292)

0.35 (.013)

0.25 (.010)

2.30 (.090)

2.10 (.083)

50.00 (1.969) MIN.

16.30 (.641

15.70 (.619

NOTES :

1. OUTLINE COMFORMS TO EIA-418-1.

2. CONTROLLING DIMENSION: MILLIMETER..

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DIS TORTION @ OUTER EDGE.

14.40 (.566)

12.40 (.488)

3

18.40 (.724) MAX.

4

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 06/04

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