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PD - 9.1353A
TO-220 FULLPAK
PRELIMINARY
IRFI530N
HEXFET® Power MOSFET
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.6 A
I
DM
PD @TC = 25°C Power Dissipation 41 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 60
Linear Derating Factor 0.27 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 150 mJ
Avalanche Current 9.0 A
Repetitive Avalanche Current 4.1 mJ
Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
D
V
= 100V
DSS
R
S
DS(on)
ID = 12A
= 0.11Ω
Thermal Resistance
R
R
θJC
θJA
Parameter Min. Typ. Max. Units
Junction-to-Case –––– –––– 3.7
Junction-to-Ambient –––– –––– 65
°C/W
3/16/98
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IRFI530N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.11 Ω VGS = 10V, ID = 6.6A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 6.4 ––– ––– S VDS = 50V, ID = 9.0A
Drain-to-Source Leakage Current
––– ––– 25 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
µA
nA
Total Gate Charge ––– ––– 44 ID = 9.0A
Gate-to-Source Charge ––– ––– 6.2 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 6.4 ––– VDD = 50V
Rise Time ––– 27 ––– ID = 9.0A
Turn-Off Delay Time ––– 37 ––– RG = 12Ω
ns
Fall Time ––– 25 ––– RD = 5.5Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 640 ––– VGS = 0V
Output Capacitance ––– 160 ––– VDS = 25V
Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5
pF
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 12
––– ––– 60
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6.6A, VGS = 0V
Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = 9.0A
Reverse Recovery Charge ––– 650 970 nC di/dt = 100A/µs
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 15V, starting TJ = 25°C, L = 3.1mH
= 9.0A. (See Figure 12)
AS
≤ 9.0A, di/dt ≤ 520A/µs, V
DD
≤ V
(BR)DSS
,
t=60s, ƒ=60Hz
Uses IRF530N data and test conditions
D
A
G
S
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IRFI530N
A
)
A
)
A
A
100
VGS
TOP 15V
10V
8. 0V
7. 0V
6. 0V
5. 5V
5. 0V
BOT TOM 4. 5V
10
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE W IDTH
T = 25°C
1
0.1 1 10 100
V , D rain-to-S o urc e V o ltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
VG S
TOP 15V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
BOTTOM 4.5V
10
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Dra in- to-So ur ce V o ltage (V
DS
J
Fig 2. Typical Output Characteristics
3.0
I = 1 5A
D
T = 25°C
J
T = 175°C
J
10
D
I , D rain-to-Source Current (A)
1
45678910
V , Ga te-to - S o u rc e Vo ltage (V
GS
V = 50V
DS
20µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(N o rma liz ed )
1.0
0.5
DS(on)
R , D ra in -to -S o u rc e O n R e s is tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Tem pe rature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10 V
GS
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IRFI530N
A
A
A
A
1200
1000
800
600
400
C, Capacitance (pF)
200
0
1 10 100
V = 0 V, f = 1 MHz
GS
C = C + C , C SH OR T ED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rss
V , D rain-to-Sourc e V oltage (V )
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = 9.0 A
V , Gate-to -S o ur ce Volta g e ( V )
16
12
GS
D
8
4
V = 80 V
DS
V = 50 V
DS
V = 20 V
DS
FOR TEST CIRCUIT
0
0 5 10 15 20 25 30 35 40 45
Q , To ta l Ga te C h a rg e (n C)
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
O P E R A T IO N IN TH IS A R EA L IM IT E D
BY R
DS(on)
T = 175°C
J
10
SD
I , R everse Drain Current (A)
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V , So urce-to-Drain Voltage (V)
SD
T = 25°C
J
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10µs
10
D
I , Drain Current (A )
T = 2 5°C
C
T = 175°C
J
Single Pulse
1
1 10 100 1000
V , D rain-to-S ource V oltage (V)
DS
100µs
1ms
10ms
Fig 8. Maximum Safe Operating Area
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8.0
6.0
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFI530N
R
D.U.T.
t
d(off)tf
D
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
+
V
DD
-
10
D = 0.50
thJC
1
0.20
0.10
0.05
P
1 2
DM
t
1
t
2
0.02
0.1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRFI530N
A
D.U.T.
I
AS
L
0.01Ω
+
V
DD
-
R
10 V
V
DS
G
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
350
300
250
200
150
100
50
AS
V = 25 V
E , Single Pulse Avalanche Energy (mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C )
J
I
TO P 3.7A
6.4A
BO TTOM 9.0A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same T ype as D.U.T.
D
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T .
3mA
I
G
Current Sampling Resistors
I
+
-
D
Fig 13b. Gate Charge Test Circuit
V
DS
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IRFI530N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Diode Recovery
dv/dt
Fig 14. For N-Channel HEXFETS
di/dt
V
DD
I
SD
Page 8
IRFI530N
A
Package Outline
TO-220 FullPak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
16.00 (.630)
15.80 (.622)
1 2 3
13.70 (.540)
13.50 (.530)
1.40 (.055)
3X
1.05 (.042)
2.54 (.100)
2 X
Part Marking Information
TO-220 FullPak
E X A MPL E : THIS IS AN I R F I84 0 G
W IT H A S S EMB L Y
L OT CO DE E4 0 1
3.70 (.145)
3.20 (.126)
1.15 (.045)
MIN.
0.90 (.035)
3X
0.70 (.028)
0.25 (.010)
ø
3.30 (.130)
3.10 (.122)
3.40 (.133)
3.10 (.123)
- A -
- B -
M
4.80 (.189)
4.60 (.181)
7.10 (.280)
6.70 (.263)
A M B
INTERNATIONAL
R E CT IF IER
L OG O
ASSEMBLY
L O T C O DE
2.80 (.110)
2.60 (.102)
NOTES:
1 DIMENSIONING & TOLERANCING
PE R ANSI Y14.5M, 1982
2 CONTROLLING DIMENSION: INCH.
0.48 (.019)
3X
0.44 (.017)
2.85 (.112)
2.65 (.104)
LEAD ASSIGNMENTS
1 - G A T E
2 - DRAIN
3 - S O URCE
MINIMUM CREEPAGE
DISTANCE BETW E EN
A-B-C-D = 4.80 (.189)
PART NUM BER
IRFI840G
E401 9245
DATE CODE
(YYWW )
YY = YEAR
WW = WEEK
C
D
A
B
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 3/98
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