Datasheet IRFI4212H-117P Datasheet (IRF)

DIGITAL AUDIO MOSFET

PD - 97249A

IRFI4212H-117P

Features

 Integrated half-bridge package  Reduces the part count by half  Facilitates better PCB layout  Key parameters optimized for Class-D

audio amplifier applications

 Low R

for improved efficiency

DS(ON)

V

DS

R

DS(ON)

Q

g

Q

sw

R

G(int)

T

max

J

typ. @ 10V

typ.

Key Parameters

100 V

58 12 nC

6.9 nC

3.4 Ω

150 °C

g

m

:

 Low Qg and Qsw for better THD and

improved efficiency

 Low Qrr for better THD and lower EMI  Can delivery up to 150W per channel into

4Ω load in half-bridge configuration amplifier

 Lead-free package

TO-220 Full-Pak 5 PIN

G1, G2 D1, D2 S1, S2

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Absolute Maximum Ratings

V

DS

V

GS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V

@ TC = 100°C Continuous Drain Current, VGS @ 10V

I

D

I

DM

@TC = 25°C

P

D

@TC = 100°C

P

D

E

AS

T

J

T

STG

Thermal Resistance

R

JC

θ

R

JA

θ

Drain-to-Source Voltage V

Gate-to-Source Voltage

Pulsed Drain Current

Power Dissipation

Linear Derating Factor W/°C Single Pulse Avalanche Energy

Operating Junction and °C

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

g

Junction-to-Case

Junction-to-Ambient (free air) ––– 65

g

Parameter Units

c

f

d

Parameter Typ. Max. Units

f

Gate Drain Source

Max.

100

±20

11

6.8

44

18

7.0

0.14 41

-55 to + 150

300

10lbxin (1.1Nxm)

––– 7.1 °C/W

A

W

mJ

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08/21/06

IRFI4212H-117P

/

Diode Ch

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

∆ΒV

R

DS(on)

V

GS(th)

∆V

I

DSS

I

GSS

g

fs

Q

g

Q

sw

R

G(int)

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

L

D

L

S

DSS

GS(th)

gs1

gs2

gd

godr

eff.

∆T

Drain-to-Source Breakdown Voltage 100 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 58 72.5

mΩ

Gate Threshold Voltage 3.0 ––– 5.0 V

Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C

J

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

Forward Transconductance 11 ––– ––– S

Total Gate Charge ––– 12 18

Pre-Vth Gate-to-Source Charge ––– 1.6 –––

Post-Vth Gate-to-Source Charge ––– 0.71 ––– nC

Gate-to-Drain Charge ––– 6.2 –––

Gate Charge Overdrive ––– 3.5 ––– See Fig. 6 and 15 Switch Charge (Q

gs2

+ Qgd)

––– 6.9 –––

Internal Gate Resistance ––– 3.4 ––– Ω

Turn-On Delay Time ––– 4.7 –––

Rise Time ––– 8.3 –––

Turn-Off Delay Time ––– 9.5 ––– ns

Fall Time ––– 4.3 –––

Input Capacitance ––– 490 –––

Output Capacitance ––– 64 ––– pF

Reverse Transfer Capacitance ––– 34 –––

Effective Output Capacitance ––– 110 –––

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductance ––– 7.5 ––– from package

g

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

= 10V, ID = 6.6A

V

GS

= VGS, ID = 250µA

V

DS

V

= 100V, VGS = 0V

DS

= 100V, VGS = 0V, TJ = 125°C

V

DS

= 20V

V

GS

= -20V

V

GS

VDS = 50V, ID = 6.6A

VDS = 80V

= 10V

V

GS

= 6.6A

I

D

VDD = 50V, VGS = 10V

I

= 6.6A

D

RG = 2.5Ω

V

= 0V

GS

V

= 50V

DS

ƒ = 1.0MHz, See Fig.5

= 0V, VDS = 0V to 80V

V

GS

and center of die contact

= 1mA

D

e

e

D

G

S

IS @ TC = 25°C

I

SM

V

SD

t

rr

Q

rr

Notes:

aracteristics

Parameter Min. Typ. Max. Units

Continuous Source Current ––– ––– 11

(Body Diode) A Pulsed Source Current ––– ––– 44

(Body Diode)

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 36 54 ns

Reverse Recovery Charge ––– 56 84 nC

g

c

Conditions

MOSFET symbol

showing the integral reverse

p-n junction diode.

= 25°C, IS = 6.6A, VGS = 0V

T

J

T

= 25°C, IF = 6.6A

J

di/dt = 100A/µs

e

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T

= 25°C, L = 1.9mH, RG = 25Ω, I

J

AS

= 6.6A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  R

is measured at T

θ

of approximately 90°C.

J

 Specifications refer to single MosFET.

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e

IRFI4212H-117P

100

TOP 15V

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

BOTTOM 6.0V

10

VGS

12V 10V

9.0V

8.0V

7.0V

6.0V

60µs PULSE WIDTH

≤

Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

(

t n e

r

10

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

1

TJ = 150°C

TJ = 25°C

V

= 50V

DS

≤

60µs PULSE WIDTH

0.1 3 4 5 6 7 8 9

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

100

TOP 15V

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

BOTTOM 6.0V

10

D

VGS

12V 10V

9.0V

8.0V

7.0V

6.0V

60µs PULSE WIDTH

≤

Tj = 150°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.5

e c n a

t s

i s e

R n O

)

e

d

c

e

r

z

u

i

l

o

a

S

-

m

o

r

t

o

n

N

i

( a

r D

,

) n o

( S D

R

2.0

1.5

1.0

ID = 6.6A

V

= 10V

GS

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

10000

) F p

( e

c n a

t

i c a p a

C ,

C

1000

100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

oss

C

+ Cgd, C

+ C

gd

iss

rss

SHORTED

ds

10

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

12.0 ID= 6.6A

)

10.0

V

( e

g a

t

l

8.0

o V

e c

r u

6.0

o S

o

t

e

t

4.0

a G

,

S G

2.0

V

VDS= 80V

VDS= 50V

VDS= 20V

0.0 0 2 4 6 8 101214

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRFI4212H-117P

τ

100

) A

( t n e

r

10

u C n

i a

r D e

s

r e v

1

e R

,

D S

I

TJ = 150°C

TJ = 25°C

V

GS

= 0V

0.1

0.0 0.5 1.0 1.5

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

12

10

) A

(

8

t n e

r

r u

C

6

n

i a

r D

4

,

D

I

2

1000

OPERATION IN THIS AREA

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

D

100

10

0.1

0.01

1

Tc = 25°C Tj = 150°C

LIMITED BY RDS(on)

Single Pulse

0.001 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

4.5

) V

(

4.0

e g a

t

l o V

3.5

d

l o h s e

3.0

r h T

e

t a

2.5

G ,

) h

t

( S

2.0

G

V

ID = 250µA

100µsec

1msec

10msec

DC

0

25 50 75 100 125 150

TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs. Junction Temperature

1.5

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

10

D = 0.50

)

C J h

t

Z (

e s n o p s e

R l a

m

r e h T

1

0.1

0.01

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

2

R

1

τ

2

3

R

2

3

τ

3

τ

2

3

Ri (°C/W) τi (sec)

4

R

4

0.7942 0.000208

τ

C

τ

1.3536 0.001434

4

τ

4

2.2345 0.100647

2.7177 1.9398

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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A

)

200

Ω

m

( e

c

175

n a

t s

i s e

150

R n O e

c

r

125

u o S

o

t

100

n

i a

r D ,

75

) n o

( S D

50

R

TJ = 125°C

TJ = 25°C

ID = 6.6A

4 5 6 7 8 9 10 11 12 13 14 15 16

V

Gate -to -Source Voltage (V)

GS,

Fig 12. On-Resistance vs. Gate Voltage

15V

IRFI4212H-117P

175

) J

m

(

150

y g

r e n E

125

e h c n a

100

l a v A

e

75

s

l u P

e

l

50

g n

i S ,

25

S A

E

TOP 1.2A

BOTTOM 6.6A

0

25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

Fig 13a. Maximum Avalanche Energy vs. Drain Current

V

t

p

(BR)DSS

I

D

2.1A

DRIVER

+

-

V

DD

R

V

20V

V

DS

G

GS

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 13b. Unclamped Inductive Test Circuit

L

V

DS

D

+

-

V

DD

D.U.T

V

GS

Pulse Width < 1µs

Duty Factor < 0.1%

Fig 14a. Switching Time Test Circuit

I

AS

Fig 13c. Unclamped Inductive Waveforms

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 14b. Switching Time Waveforms

Vds

Vgs

Id

L

VCC

0

DUT

Vgs(th)

1K

Qgs1

Qgs2 Qgd Qgodr

Fig 15a. Gate Charge Test Circuit

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Fig 15b Gate Charge Waveform

IRFI4212H-117P

TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117

(Dimensions are shown in millimeters (inches))

TO-220 Full-Pak 5-Pin Part Marking Information

14

TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/06

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Datasheet IRFI4212H-117P Datasheet (IRF)

Specifications and Main Features

Frequently Asked Questions

User Manual