Datasheet IRFHM831PbF Datasheet (IRF)

PD -97539A

IRFHM831PbF

HEXFET® Power MOSFET

V

DS

R

DS(on) max

(@VGS = 10V)

Q

g (typical)

R

G (typical)

I

D

(@T

c(Bottom)

= 25°C)

30 V

7.8

7.3

0.5

40

h

m

nC

:

A

:

D

5

D

6

D

7

D

G

4

S

3

S

2

S

18

PQFN 3.3mm x 3.3mm

Applications

• Control MOSFET for Buck Converters

Features and Benefits

Features

Low Charge (typical 7.3nC) Lower Switching Losses Low Thermal Resistance to PCB (<4.7°C/W) Enable Better Thermal Dissipation 100% Rg tested Increased Reliability Low Profile (<1.0mm) results in Increased Power Density

Industry-Standard Pinout

⇒

Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability

Benefits

Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier

Orderable part number P acka ge Type Standar d Pack

Form Quantity

IRFHM831TRPBF PQFN 3.3mm x 3 .3m m Tape and Reel 4000 IRFHM831TR2PBF PQFN 3.3mm x 3 .3m m Tape and Reel 400

Absolute Maximum Ratings

Parameter Units

V

DS

V

GS

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V

I

@ TA = 70°C Continuous Drain Current, VGS @ 10V

D

I

@ T

D

I

@ T

D

I

DM

PD @TA = 25°C

P

@ T

D

T

J

T

STG

= 25°C Continuous Drain Current, VGS @ 10V

C(Bottom)

= 100°C Continuous Drain Current, VGS @ 10V

C(Bottom)

= 25°C

C(Bottom)

Notes  through  are on page 8

Drain-to-Source Voltage

Gate-to-Source Voltage

Pulsed Drain Current

Power Dissipation

Linear Derating Factor Operating Junction and

Storage Temperature Range

c g g

g

-55 to + 150

Max.

30

±20

14

11

40

h

28

96

2.5

27

0.02

Note

V

A

W

W/°C

°C

www.irf.com 1

9/8/10

IRFHM831PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

V

R

V

I

DSS

I

GSS

GS(th)

V

DS(on)

GS(th)

DSS

/ΔT

ΔΒ

Δ

gfs Forward Transconductance 82 ––– ––– S Q

g

Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Avalanche Characteristics

E

AS

I

AR

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Drain-to-Source Breakdown Voltage 30 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 6.6 7.8

––– 10.7 12.6

Gate Threshold Voltage 1.35 1.8 2.35 V

Gate Threshold Voltage Coefficient ––– -6.8 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– 1.0

––– ––– 150

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 16 ––– nC

Total Gate Charge ––– 7.3 11

Pre-Vth Gate-to-Source Charge ––– 1.7 –––

Post-Vth Gate-to-Source Charge ––– 0.9 –––

Gate-to-Drain Charge ––– 2.5 –––

Gate Charge Overdrive ––– 2.2 ––– See Fig.17 & 18 Switch Charge (Q

gs2

+ Qgd)

––– 3.4 –––

Output Charge ––– 5.1 ––– nC

Gate Resistance ––– 0.5

–––

Turn-On Delay Time ––– 6.9 –––

Rise Time ––– 12 –––

Turn-Off Delay Time ––– 6.2 –––

Fall Time ––– 4.7 –––

Input Capacitance ––– 1050 –––

Output Capacitance ––– 190 –––

Reverse Transfer Capacitance ––– 80 –––

Parameter Units

Single Pulse Avalanche Energy

Avalanche Current

c

d

Typ.

–––

Parameter Min. Typ. Max. Units

Continuous Source Current

––– –––

40

h

(Body Diode) Pulsed Source Current

(Body Diode)

c

––– ––– 96

Diode Forward Voltage ––– ––– 1.0 V

Reverse Recovery Time ––– 15 22 ns

Reverse Recovery Charge ––– 16 24 nC

Forward Turn-On Time Time is dominated by parasitic Inductance

= 0V, ID = 250μA

V

GS

Reference to 25°C, I

V

= 10V, ID = 12A

GS

mΩ

V

= 4.5V, ID = 12A

GS

= VGS, ID = 25μA

V

DS

= 24V, VGS = 0V

V

DS

μA

V

= 24V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

nA

V

= -20V

GS

= 15V, ID = 12A

V

DS

= 10V, VDS = 15V, ID = 12A

V

GS

= 15V

V

DS

= 4.5V

V

GS

nC

= 12A

I

D

V

= 16V, VGS = 0V

DS

Ω

= 15V, VGS = 4.5V

V

DD

I

= 12A

D

ns

R

G

=1.8Ω

See Fig.15

VGS = 0V

pF

V

= 25V

DS

ƒ = 1.0MHz

MOSFET symbol

showing the

A

integral reverse

p-n junction diode.

= 25°C, IS = 12A, VGS = 0V

T

J

T

= 25°C, IF = 12A, VDD = 15V

J

di/dt = 300A/μs

Max.

50

12

Conditions

= 1mA

D

e

Conditions

e

mJ

A

D

G

S

e

Thermal Resistance

Parameter Typ. Max. Units

R

θ

JC

R

θ

JC

R

θ

JA

R

θ

JA

(Bottom)

(Top)

(<10s)

Junction-to-Case

Junction-to-Ambient

2 www.irf.com

f f

g g

––– 4.7

––– 44

––– 50

––– 32

°C/W

IRFHM831PbF

1000

≤

60μs PULSE WIDTH

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

Tj = 25°C

100

10

2.8V

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TJ = 150°C

10

TJ = 25°C

1

V

= 15V

DS

≤ 60μs PULSE WIDTH

0.1

2.0 3.0 4.0 5.0

VGS, Gate-to-Source Voltage (V)

TOP 10V

BOTTOM 2.8V

VGS

8.0V

4.5V

3.8V

3.5V

3.3V

3.0V

1000

≤ 60μs PULSE WIDTH

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

Tj = 150°C

100

10

2.8V

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 12A

V

= 10V

GS

1.5

) d e z

i

l a

m

r o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

TOP 10V

BOTTOM 2.8V

VGS

8.0V

4.5V

3.8V

3.5V

3.3V

3.0V

Fig 3. Typical Transfer Characteristics

) F p

( e

c n a

t

i c a p a

C ,

C

10000

1000

100

10

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

C

iss

rss

oss

= C

+ Cgd, C

gs

gd

+ C

ds

SHORTED

ds

gd

Ciss

Coss

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 4. Normalized On-Resistance Vs. Temperature

14

) V

( e

g a

t

l o V

e c

r u o S

o

t

e

t a

G ,

V

ID= 12A

12

10

8

6

4

S G

2

VDS= 24V

VDS= 15V

VDS= 6.0V

0

0 5 10 15 20

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

www.irf.com 3

IRFHM831PbF

100.0

) A

( t n e

r

10.0

u C n

i a

r D e

s

r e v

1.0

e R

,

D S

I

0.1

TJ = 150°C

TJ = 25°C

V

= 0V

GS

0.2 0.4 0.6 0.8 1.0

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

50

LIMITED BY PACKAGE

40

) A

( t n e

30

r

r u

C n

i a

r

20

D ,

D

I

10

0

25 50 75 100 125 150

TC, Case Temperature (°C)

1000

OPERATION IN THIS AREA

) A

( t n

100

e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

Tc = 25°C Tj = 150°C Single Pulse

0.1

0.1 1 10 100

LIMITED BY RDS(on)

10msec

1msec

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

3.0

) V

( e

2.5

g a

t

l o V

d

l

2.0

o h s e

r h

t e

t a

G ) h

t

(

S G

V

ID = 1.0A

1.5

ID = 1.0mA

ID = 250μA

ID = 25μA

1.0

0.5

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

100μsec

Fig 9. Maximum Drain Current Vs.

Case (Bottom) Temperature

10

)

C J h

t Z (

e s n o p s e

R l a

m

r e h T

0.01

0.001

D = 0.50

1

0.1

1E-006 1E-005 0.0001 0.001 0.01 0.1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Fig 10. Threshold Voltage Vs. Temperature

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

4 www.irf.com

A

)

Ω

40

(

m

e c

35

n a

t s

i s

30

e R n

25

O e

c

r

20

u o S

-

15

o

t

n

i a

r

10

D ,

) n

5

o

(

S D

0

R

2 4 6 8 10 12 14 16 18 20

VGS, Gate-to-Source Voltage (V)

ID = 12A

TJ = 125°C

TJ = 25°C

IRFHM831PbF

200

) J

m

( y

g

r

160

e n E

e h c

120

n a

l a v A

e s

80

l u P

e

l g n

i

40

S

, S A

E

0

25 50 75 100 125 150

Starting TJ, Junction Temperature (°C)

I

TOP

6.4A

BOTTOM

D

3.1A

12A

Fig 12. On-Resistance vs. Gate Voltage

15V

DRIVER

+

V

DD

-

R

20V

V

DS

G

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 14a. Unclamped Inductive Test Circuit

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1

Fig 13. Maximum Avalanche Energy vs. Drain Current

V

(BR)DSS

t

p

I

AS

Fig 14b. Unclamped Inductive Waveforms

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(of f)

t

f

Fig 15a. Switching Time Test Circuit

www.irf.com 5

Fig 15b. Switching Time Waveforms

IRFHM831PbF





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Vds

Id

Vgs

L

VCC

0

1K

Fig 17. Gate Charge Test Circuit

DUT

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Fig 18. Gate Charge Waveform

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PQFN 3.3x3.3 Outline Package Details

IRFHM831PbF

8

7

6

For footprint and stencil design recommendations, please refer to application note AN-1154 at

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 3.3x3.3 Part Marking

3.3x3.3 PQFN PART MARKING DETAIL

INTERNATIONAL

RECTIFIER LOGO

DATE CODE

ASSEMBLY SITE CODE

(Per SCOP 200-002)

PIN 1

IDENTIFIER

::::

!;99!

:::::

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

PART NUMBER

MARKING CODE

(Per Marking Spec)

LOT CODE

1

2

3

45

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com 7

IRFHM831PbF

PQFN 3.3x3.3 Tape and Reel

NOTE: Controlling dimensions in mm Std reel quantity is 4000 p arts.

REEL DIMENSIONS

STANDARD OPTION (QTY 4000)

METRIC IMPERI AL

CODE

A B C D E F G

MAX

MIN

330.25

326.0

20.45

20.2

13.50

12.8

1.5

102.0 REF 4.016 REF

18.3

17.8

12.9

12.4

Qualification Information

Qualification level

2.5

CODE

A

12.835

†

0.795

0.504

0.059

0.701

0.488

0.805

0.531

0.098

0.720

0.508

MAX

MIN

13.002

B C D E F G H

Industrial

(per JEDEC JESD47F

DIMENSIONS

METRIC IMPERIAL

MIN

7.90

3.90

11.70

5.45

3.50

0.25

1.10

MAX

8.10

4.10

12.30

5.55

3.70

0.35

1.30

††

†††

guidel ine s)

Moisture Sensitivity Le vel PQFN 3.3mm x 3.3mm

(per JEDEC J-STD-020D

RoHS Compliant

Yes

 Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

 Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

 Applicable version of JEDEC standard at the time of product release.

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T  Pulse width ≤ 400μs; duty cycle ≤ 2%.  R

is measured at T

θ

 When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

 Calculated continouous current based on maximum allowable junction temperature. Package is limited to 40A by

production test capability.

= 25°C, L = 0.69mH, RG = 50Ω, I

J

of approximately 90°C.

J

AS

= 12A.

MIN

0.311

0.154

0.461

0.215

0.138

0.010

0.043

MSL1

MAX

0.319

0.161

0.484

0.219

0.146

0.014

0.051

†††

)

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.9/2010

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