Datasheet irff9024 Datasheet

REPETITIVE A VALANCHE AND dv/dt RA TED

HEXFETTRANSISTORS
THRU-HOLE (TO-205AF)

60V, P-CHANNEL

Product Summary

Part Number BVDSS RDS(on) ID

IRFF9024 -60V 0.28Ω -6.4A

The HEXFETtechnology is the key to International
Rectifier’s adv anced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis­tance combined with high transconductance.

The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt­age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.

They are well suited for applications such as switch­ing power supplies, motor controls, inverters, chop­pers, audio amplifiers and high energy pulse circuits.

Features:

n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling

TO-39

PD -90413

IRFF9024

Absolute Maximum Ratings

Parameter Units

ID @ VGS = -10V, TC = 25°C Continuous Drain Current -6.4

ID @ VGS = -10V, TC = 100°C Continuous Drain Current -4.1

I

DM

PD @ TC = 25°C Max. Power Dissipation 20 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ -4.5

T

J

T

STG

For footnotes refer to the last page

Pulsed Drain Current ➀ -26

Linear Derating Factor 0.16 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 120 mJ
Avalanche Current ➀ —A
Repetitive Av alanche Energy ➀ —mJ

Operating Junction -55 to 150
Storage T emperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g

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A

V/ns

o

C

01/23/01

IRFF9024

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV
∆BV

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS
I

GSS
Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S + LD

C

iss

C

oss

C

rss

DSS

DSS

Drain-to-Source Breakdown V oltage -60 — — V VGS = 0V, ID = -1.0mA

/∆TJTemperature Coefficient of Breakdown — -0.068 — V/°C Reference to 25°C, ID = -1.0mA

Voltage
Static Drain-to-Source On-State — — 0.28 VGS = -10V, ID = -4.1A ➃
Resistance — — 0.29 VGS =-10V, ID = -6.4A ➃
Gate Threshold V oltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 1.3 — — S ( ) VDS > -15V, IDS = -4.1A ➃
Zero Gate V oltage Drain Current — — -25 VDS= -48V , VGS=0V

— — -250 µA VDS = -48V

Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 nA VGS = 20V
T otal Gate Charge 8.4 — 19 VGS =-10V, ID = -6.4A
Gate-to-Source Charge 2.0 — 5.4 nC VDS= -30V
Gate-to-Drain (‘Miller’) Charge 6.0 — 11
Turn-On Delay Time — — 20 VDD = -30V, ID = -6.4A,
Rise Time — — 100 RG =7.5Ω
Turn-Off Delay Time — — 23
Fall Time — — 44
Total Inductance — 7.0 —

Input Capacitance — 570 VGS = 0V , VDS = -25V
Output Capacitance — 360 — pF f = 1.0MHz
Reverse Transfer Capacitance — 65 —

Ω

Ω

ns

nH

VGS = 0V , TJ = 125°C

Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — -6.4

S

I

Pulse Source Current (Body Diode) ➀ — — -26

SM

V

Diode Forward V oltage — — -6.3 V Tj = 25°C, IS =-6.4A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 200 n S Tj = 25°C, IF = -6.4A, di/dt ≤ -100A/µs

rr

Q

Reverse Recovery Charge — — 2.2 µC VDD ≤ -50V ➃

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

S

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thJA

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

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Junction-to-Case — — 6.25
Junction-to-Ambient — — 175 Typical socket mount

°C/W

+ LD.

IRFF9024

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFF9024

13 a& b

13 a& b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area

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IRFF9024

R

V

DS

V

GS

R

G

-10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

D

D.U.T.

-

+

V

DD

Fig 9. Maximum Drain Current Vs.

Case Temperature

V

GS

10%

90%
V

DS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFF9024

(BR)

L

D.U.T

I

AS

0.01

p

DRIVER

Ω

15V

R

G

-20V

-10V

V

DS

t

Fig 12a. Unclamped Inductive Test Circuit

I

AS

t

p

V

DSS

V

DD

A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

Q

G

-10V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

-12V

12V

V

GS

Fig 13b. Gate Charge Test Circuit

50KΩ

.2µF

.3µF

-3mA

Current Sampling Resistors

­V

DS

+

D.U.T.

I

G

I

D

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Foot Notes:

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ V

= -25V, starting TJ = 25°C,

DD

Peak IL = -6.4A,

➂ I

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions —TO-205AF

≤ -6.4A, di/dt ≤ -200A/µs,

SD

VDD≤ -60V , TJ ≤ 150°C
Suggested RG = 7.5 Ω

IRFF9024

LEGEND
1- SOURCE
2- GATE
3- DRAIN

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: [phone]

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: [phone]

Data and specifications subject to change without notice. 1/01

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