Datasheet irff310 Datasheet

PD - 90425C

IRFF310

REPETITIVE A V ALANCHE AND dv/dt RA TED



HEXFET

TRANSISTORS JANTXV2N6786

JANTX2N6786

THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556

400V, N-CHANNEL

Product Summary

Part Number BVDSS RDS(on) ID

IRFF310 400V 3.6Ω 1.25A

The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis­tance combined with high transconductance.

The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt­age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.

They are well suited for applications such as switch­ing power supplies, motor controls, inverters, chop­pers, audio amplifiers and high energy pulse circuits.

Features:

n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling

TO-39

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 1.25

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 0.80

I

DM

PD @ TC = 25°C Max. Power Dissipation 1 5 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 4.0

T

J

T

STG

For footnotes refer to the last page

Pulsed Drain Current ➀ 5.5

Linear Derating Factor 0.12 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy ➁ 0.82 mJ
Avalanche Current ➀ —A
Repetitive Avalanche Energy ➀ —mJ

Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g

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A

V/ns

o

C

01/22/01

IRFF310

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV
∆BV

R

V
g
I

I
I
Q
Q
Q
t
t
t

t

L

C
C
C

DSS

d(on)

d(off)

DSS

DSS

DS(on)

GS(th)

fs

GSS
GSS

g
gs
gd

r

f

S + LD

iss
oss
rss

Drain-to-Source Breakdown Voltage 40 0 — — V VGS = 0V, ID = 1.0mA

/∆TJTemperature Coefficient of Breakdown — 0.37 — V/°C Reference to 25°C, ID = 1.0mA

Voltage
Static Drain-to-Source On-State — — 3.6 VGS = 10V, ID = 0.80A ➃
Resistance — — 4.15 VGS =10V, ID =1.25A ➃
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 0. 7 — — S ( ) VDS > 15V, IDS = 0.80A ➃
Zero Gate Voltage Drain Current — — 2 5 VDS= 320V , VGS=0V

— — 250 µA VDS = 320V

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 nA VGS = -20V
Total Gate Charge 6. 7 — 8. 4 VGS =10V, ID =1.25A
Gate-to-Source Charge 0. 2 — 1 .5 n C VDS= 200V
Gate-to-Drain (‘Miller’) Charge 3. 5 — 5. 0
Turn-On Delay Time — — 1 5 VDD = 200V, ID = 1.25A,
Rise Time — — 2 0 RG = 7.5Ω
Turn-Off Delay Time — — 35
Fall Time — — 30
Total Inductance — 7 .0 —

Input Capacitance — 1 70 VGS = 0V, VDS = 25V
Output Capacitance — 49 — pF f = 1.0MHz
Reverse Transfer Capacitance — 1 0 —

Ω

Ω

ns

nH

VGS = 0V, TJ = 125°C

Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — 1.25

S

I

Pulse Source Current (Body Diode) ➀ — — 5.5

SM

V

Diode Forward Voltage — — 1.4 V Tj = 25°C, IS =1.25A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 5 40 nS Tj = 25°C, IF =1.25A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 4 .5 µC VDD ≤ 50V ➃

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

S

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thJA

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

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Junction-to-Case — — 8. 3
Junction-to-Ambient — — 175 Typical socket mount.

°C/W

+ LD.

IRFF310

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFF310

13 a& b

13 a& b

13 a& b

13 a& b

13 a& b

13 a& b

13 a& b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area

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Fig 9. Maximum Drain Current Vs.

Case Temperature

IRFF310

R

D.U.T.

t

d(off)tf

D

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

+

V

DD

-

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFF310

15V

DRIVER

+

-

R

G

10V

20V

V

DS

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR )DS S

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

V

DD

A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

+

V

DS

-

V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

GS

3mA

I

G

Current Sampling Resistors

I

D

Fig 13b. Gate Charge Test Circuit

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Foot Notes:

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ V

=50V, starting TJ = 25°C,

DD

Peak IL = 1.25A,

➂ I

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions —TO-205AF

≤ 1.25A, di/dt ≤ 40A/µs,

SD

VDD≤ 400V, TJ ≤ 150°C
Suggested RG =7.5 Ω

IRFF310

LEGEND
1- SOURCE
2- GATE
3- DRAIN

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: [phone]

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: [phone]

Data and specifications subject to change without notice. 1-01

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