Datasheet IRFD310 Datasheet (International Rectifier)

HEXFET® Power MOSFET

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Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
Simple Drive Requirements

Description

Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on­resistance and cost-effectiveness.

The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.

PD -9.1225

IRFD310

V

= 400V

DSS

R
ID = 0.35A

DS(on)

= 3.6Ω

HD-1

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10 V 0.35
ID @ TC = 100°C Continuous Drain Current, VGS @ 10 V 0.22 A
I

DM

PD @TC = 25°C Power Dissipation 1.0 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
T

J

T

STG

Pulsed Drain Current 2.8

Linear Derating Factor 0.0083 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 46 mJ
Avalanche Current 0.35 A
Repetitive Avalanche Energy 0.10 mJ

Operating Junction and -55 to + 150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJA

Junction-to-Ambient — — 62 °C/W

A

Revision 0

IRFD310

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient — 0.47 — V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance — — 3.6 VGS = 10.0V, ID = 0.21A

— — VGS = V, ID = A

Ω

Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 1.0 — — S VDS = 50V, ID = 1.2A
Drain-to-Source Leakage Current — — 25 VDS = 400V, VGS = 0V

— — 250 VDS = 320V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage — — 100 VGS = 20V
Gate-to-Source Reverse Leakage — — -100 VGS = -20V

µA

nA

Total Gate Charge — — 17 ID = 2.0A
Gate-to-Source Charge — — 3.4 nC VDS = 320V
Gate-to-Drain ("Miller") Charge — — 8.5 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time — 8.0 — VDD = 200V
Rise Time — 9.9 — ID = 2.0A
Turn-Off Delay Time — 21 — RG = 24Ω

ns

Fall Time — 11 — RD = 95Ω, See Fig. 10
Internal Drain Inductance — 4.0 — Between lead,

6mm (0.25in.)

Internal Source Inductance — 6.0 — from package

nH

and center of

die contact
Input Capacitance — 170 — VGS = 0V
Output Capacitance — 34 — pF VDS = 25V
Reverse Transfer Capacitance — 6.3 — ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V

= 50V, starting TJ = 25°C, L = 41mH

DD

RG = 25Ω, I

Parameter Min. Typ. Max. Units Conditions

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.

— — 0.35

A

— — 2.8

Diode Forward Voltage — — 1.6 V TJ = 25°C, IS = 0.35A, VGS = 0V
Reverse Recovery Time — 240 540 ns TJ = 25°C, IF = 2.0A
Reverse RecoveryCharge — 0.85 1.6 µC di/dt = 100A/µs
Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

I

≤ 2.0A, di/dt ≤ 40A/µs, V

SD

DD

≤ V

(BR)DSS

,

TJ ≤ 150°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 1.4A. (See Figure 12)

AS

IRFD310

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

I

D

, Drain Current (Amps)
I

D

, Drain Current (Amps)
I

D

, Drain Current (Amps)

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Fig 1. Typical Output Characteristics,

TC = 25oC

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Fig 2. Typical Output Characteristics,

TC = 150oC

Vs. Temperature

IRFD310

Capacitance (pF)

V

GS

, Gate-to-Source Voltage (volts)
I

SD

, Reverse Drain Current (Amps)

I

D

, Drain Current (Amps)

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Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area

IRFD310

I

D

, Drain Current (Amps)

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Fig 10a. Switching Time Test Circuit

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 10b. Switching Time Waveforms

IRFD310

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Fig 12a. Unclamped Inductive Test Circuit

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRFD310

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dv/dt Test Circuit

Peak Diode Recovery Test Circuit

IRFD310

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Package Outline

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: [phone] IR GERMANY:

Saalburgstrasse 157, 61350 Bad Homburg Tel: [phone] IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39)
1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: [phone]

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: [phone]

Data and specifications subject to change without notice.