Datasheet IRFD1Z3, IRFD1Z2, IRFD1Z1, IRFD1Z0 Datasheet (Intersil)

July 1998

Semiconductor

IRFD1Z0, IRFD1Z1,

IRFD1Z2, IRFD1Z3

0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm,
N-Channel Power MOSFETs

Features

• 0.4A and 0.5A, 60V and 100V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 2.4Ω and 3.2Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRFD1Z0 HEXDIP IRFD1Z0
IRFD1Z1 HEXDIP IRFD1Z1
IRFD1Z2 HEXDIP IRFD1Z2
IRFD1Z3 HEXDIP IRFD1Z3

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.

Formerly developmental type TA17451.

Symbol

D

G

S

NOTE: When ordering, use the entire part number.

Packaging

HEXDIP

DRAIN

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 2313.1

IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFD1Z0 IRFD1Z1 IRFD1Z2 IRFD1Z3 UNITS

Drain to Source (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . .V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . P

DS

DM

GS

100 60 100 60 V
100 60 100 60 V

0.5 0.5 0.4 0.4 A

D

4.0 4.0 3.2 3.2 A

±20 ±20 ±20 ±20 V

1.0 1.0 1.0 1.0 W

D

Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . 0.008 0.008 0.008 0.008 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . TJ,T

-55 to 150 -55 to 150 -55 to 150 -55 to 150

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

300

L

260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V (See Figure 9)

IRFD1Z0, IRFD1Z2 100 - - V

IRFD1Z1, IRFD1Z3 60 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

, VGS = 0V,

DSS

- - 250 µA

TC = 125oC

On-State Drain Current (Note 2) I

D(ON)

IRFD1Z0, IRFD1Z1 0.5 - - A

VDS > I

D(ON)

(See Figure 6)

x r

DS(ON)MAX

, VGS = 10V

IRFD1Z2, IRFD1Z3 0.4 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

GSS

DS(ON)ID

VGS = ±20V - - ±100 nA

= 0.25A, VGS = 10V (See Figures 7, 8)

IRFD1Z0, IRFD1Z1 - 2.2 2.4 Ω

IRFD1Z2, IRFD1Z3 - 2.8 3.2 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

OSS
RSS

VDS > I

fs

VDD≅ 0.5 x Rated BV

D(ON)

x r

DS(ON)MAX

, ID = 0.25A 0.25 0.35 - S

, ID = 0.25A,

DSS

RG = 50Ω (Figures 14, 15, 16)

r

RL = 198Ω for BV
RL = 118Ω for BV

DSS
DSS

= 100V

= 60V
MOSFET Switching Times are Essentially Inde­pendent of Operating Temperature

f

= 10V, ID = 1.2A, VDS = 0.8 x Rated BV
(Figures 13, 16, 17) Gate Charge is Essentially
Independent of Operating Temperature

gs
gd

VGS = 0V, VDS = 25V, f = 1MHz

ISS

(Figure 10)

DSS

-1020ns

-1525ns

-1525ns

-1020ns

- 2.0 3.0 nC

- 1.0 - nC

- 1.0 - nC

-50- pF

-20- pF

-5-pF

5-2

IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Internal Drain Inductance L

Internal Source Inductance L

Measured From The

D

Drain Lead, 2mm
(0.08in) From Package
to Center of Die

Measured From The

S

Source Lead, 2mm

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

- 4.0 - nH

- 6.0 - nH

(0.08in) From Header to

Thermal Resistance Junction to Ambient R

Source Bonding Pad

Free Air Operation - - 120oC/W

θJA

G

L

S

S

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I

SD

IRFD1Z0, IRFD1Z1 - - 0.5 A
IRFD1Z2, IRFD1Z3 - - 0.4 A

Pulse Source to Drain Current I

SDM

IRFD1Z0, IRFD1Z1 - - 4.0 A
IRFD1Z2, IRFD1Z3 - - 3.2 A

Source to Drain Diode Voltage (Note 2) V

SD

IRFD1Z0, IRFD1Z1 TA = 25oC, ISD= 0.5A, VGS = 0V - - 1.4 V

IRFD1Z2, IRFD1Z3 TA = 25oC, ISD= 0.4A, VGS = 0V - - 1.3 V
Reverse Recovery Time t
Reverse Recovery Charge Q

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

Modified MOSFET
Symbol Showing the

D

Integral Reverse
P-N Junction Diode

G

S

TJ = 150oC, ISD = 0.5A, dISD/dt = 100A/µs - 100 - ns

rr

TJ = 150oC, ISD = 0.5A, dISD/dt = 100A/µs - 0.2 - µC

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs

AMBIENT TEMPERATURE

125

0.5

0.4
IRFD1Z0, IRFD1Z1

0.3

0.2

DRAIN CURRENT (A)

D,

I

0.1

0

IRFD1Z2, IRFD1Z3

50 75 10025 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

5-3

125

IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3

Typical Performance Curves

10

IRFD1Z0, IRFD1Z1
IRFD1Z2,

IRFD1Z3

1

IRFD1Z0,
IRFD1Z1

IRFD1Z2,
IRFD1Z3

0.1

, DRAIN CURRENT (A)

D

I

TJ = 150oC MAX

0.01
SINGLE PULSE

VDS, DRAIN TO SOURCE VOLTAGE (V)

101

IRFD1Z1,
IRFD1Z3

Unless Otherwise Specified (Continued)

2.0

10µs

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

100µs

1ms
10ms

DC

IRFD1Z0, IRFD1Z2

100 1000

DS(ON)

1.6

1.2

0.8

, DRAIN CURRENT (A)

D

I

0.4

0

10V

010203040

VDS, DRAIN TO SOURCE VOLTAGE (V)

9V

PULSE DURATION = 80µs

8V

7V

VGS = 6V

5V
4V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. OUTPUT CHARACTERISTICS

2.0

PULSE DURATION = 80µs

1.6

1.2

0.8

, DRAIN CURRENT (A)

D

I

0.4

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

10V

9V

8V

7V

VGS = 6V

5V
4V

5

1.2

PULSE DURATION = 80µs
VDS> I

1.0

0.8

0.6

0.4

, DRAIN TO SOURCE CURRENT (A)

0.2

DS(ON)

I

0

x r

D(ON)

VGS, GATE TO SOURCE VOLTAGE (V)

DS(ON)MAX

50

= -55oC

T

J

TJ = 25oC

TJ = 125oC

8642012

10

FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS

8

PULSE DURATION = 2µs

6

4

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

2

DS(ON)

r

0

12

ID, DRAIN CURRENT (A)

VGS= 10V

VGS= 20V

3

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

2.5
VGS = 10V, ID = 0.5A

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

40

0

0-40

T

J

40

, JUNCTION TEMPERATURE (oC)

FIGURE 8. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

80

120 160

5-4

IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3

Typical Performance Curves

1.25

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-40

040

, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

80 120

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDO WN

VOLTAGE vs JUNCTION TEMPERATURE

0.6

PULSE DURATION = 80µs

0.5

0.4

0.3

TJ = -55oC

TJ = 25oC

TJ = 125oC

160

100

80

60

40

C, CAPACITANCE (pF)

20

0

0

C

ISS

C

OSS

C

RSS

10
V

DS

20

, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS

C

= CDS + C

OSS

30

GD

GD

GD

40

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

10

1.0

50

0.2

, TRANSCONDUCTANCE (S)

0.1

fs

g

0

0 0.25 0.50 0.75 1.0

ID, DRAIN CURRENT (A)

1.25

1.5

0

TJ = 150oC

0.4 1.20.8 1.6 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)

, SOURCE TO DRAIN CURRENT (A)

SD

I

0.1

TJ = 25oC

FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 1.2A

15

10

, GATE TO SOURCE (V)

GS

V

VDS = 80V
IRFD1Z0,

IRFD1Z2

5

0

0 234

VDS = 20V

VDS = 50V

1

, TOTAL GATE CHARGE (nC)

Q

G

FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE VOLTAGE

5-5

IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3

Test Circuits and Waveforms

R

G

V

GS

FIGURE 14. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

G

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

FIGURE 15. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

D

DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

V

GS

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 16. GATE CHARGE TEST CIRCUIT

S

CURRENT

I

D

SAMPLING

V

DS

0

I

G(REF)

FIGURE 17. GATE CHARGE WAVEFORMS

5-6