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PD - 91819C
SMPS MOSFET
IRFBL10N60A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High Speed Power Switching
Benefits
l Low Gate Charge Qg results in simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 11
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.0 A
I
DM
PD @TC = 25°C Power Dissipation 180 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 44
Linear Derating Factor 1.4 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
V
DSS
Rds(on) max I
600V 0.61Ω 11A
Super-D2Pak
TM
D
°C
Applicable Off Line SMPS Topologies:
l Active Clamped Forward
l Main Switch
Notes through are on page 8
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IRFBL10N60A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Un it s Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 70 ––– VGS = 0V, VDS = 0V to 480V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.69 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.61 Ω VGS = 10V, ID = 6.6A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 600V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 7. 0 ––– ––– S VDS = 50V, ID = 6.6A
Total Gate Charge ––– ––– 63 ID = 11A
Gate-to-Source Charge ––– ––– 14 nC VDS = 480V
Gate-to-Drain ("Miller") Charge ––– ––– 26 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 18 ––– VDD = 300V
Rise Time ––– 40 ––– ID = 11A
Turn-Off Delay Time ––– 38 – –– RG = 7.5Ω
ns
Fall Time ––– 35 ––– RD = 27Ω,See Fig. 10
Input Capacitance ––– 1895 ––– VGS = 0V
Output Capacitance ––– 254 ––– VDS = 25V
Reverse Transfer Capacitance ––– 9.2 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 2560 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 67 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 454 mJ
Avalanche Current ––– 11 A
Repetitive Avalanche Energy ––– 18 mJ
Thermal Resistance
Parameter Typ. Max. Units
R
Junction-to-Case ––– 0.70 °C/W
θJC
R
Junction-to-Ambient (PCB Mounted,steady-state) ––– 40
θJA
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
44
11
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 11A, VGS = 0V
Reverse Recovery Time ––– 585 880 ns TJ = 25°C, IF = 11A
Reverse RecoveryCharge – –– 3.8 5.8 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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D
S
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IRFBL10N60A
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
Fig 1. Typical Output Characteristics
100
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
1
1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
3.0
I =
D
11A
2.5
°
T = 150 C
J
10
°
T = 25 C
J
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRFBL10N60A
100000
10000
1000
100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
C
C
iss
rss
oss
gd
Ciss
Coss
C, Capacitance(pF)
10
1
1 10 100 1000
Crss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
ds
20
I =
11A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60
V = 480V
DS
V = 300V
DS
V = 120V
DS
FOR TEST CIRCUIT
SEE FIGURE
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
°
T = 150 C
J
10
°
T = 25 C
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
100
10us
10
D
I , Drain Current (A)I , Drain Current (A)
1
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
10 100 1000 10000
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRFBL10N60A
R
D.U.T.
D
+
V
DD
-
12
10
8
V
DS
V
GS
R
G
10V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
D
I , Drain Current (A)
2
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
thJC
Thermal Response (Z )
0.001
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
P
DM
1 2
J DM thJC C
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFBL10N60A
A
)
15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
Q
GD
DD
1000
TOP
800
600
400
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
740
I
D
4.9A
7.5A
11A
°
V
G
Charge
720
700
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
+
V
-
I
D
Fig 13b. Gate Charge Test Circuit
DS
680
DSav
660
V , A valanche Voltage (V)
640
024681012
I , Avala n ch e C u r re nt (A
av
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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A
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IRFBL10N60A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
Driver Gate Drive
P.W.
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
-
VGS=10V
V
DD
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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IRFBL10N60A
Super-D2PakTM Package Outline
Dimensions are shown in millimeters (inches)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
= 25°C, L = 7.5mH
J
= 11A. (See Figure 12)
AS
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
I
≤ 11A, di/dt ≤ 220A/µs, V
SD
TJ ≤ 150°C
DD
≤ V
(BR)DSS
,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
Data and specifications subject to change without notice. 2/2000
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