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TranElectric IRFCF30
G
Die Specification
General description :
Hexfet® power MOSFET die
with the following features:
Die for Hexfet®
4.42
0.80
* Dynamic dv/dt rating
0.61
* Ease of paralleing
* Repetitve avalanche rated
* Fast switching
Mechanical Characteristic:
Silicon Chip
Dimension (mm): 4.42*5.32
Dimension (mil): 174*206
0.43
Thickness:
Metallization: Al
Recommended wire(mm): 0.25
0.72
Recommended wire(mil): 10
Type Vds Rds(on) Idss Vgs(th)
Vgs=10V @Ids Vds=Vgs,Id=250mkA
IRFCF30 900V 3.70 Ohms 250 mkA 2.0V ... 4.0V
5.23
Typical device : IRFBF30 (in TO-220AB)
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HEXFET Power MOSFET IRFBF30
CHANNEL : N
PACKAGE : TO-220AB
Absolut Maximum Rating
Parameter Max. Units
ID , TC=25°C
ID , TC=100°C
IDM Pulsed Drain Current Π14
PD , TC=25°C
VGS Gate-to-Sourse Voltage
EAS Single Pulse Avalanche Energy • 250 mJ
IAR Avalanche Current 3.6 A
EAR Repetitive Avalanche Energy Π13 mJ
dv/dt Peak Diode Recovery dv/dt Ž 1.5 V/ns
TJ , TSTG Operating Junction and Storage Temperature Range -55 to +150
Electrical Characteristics , TJ=25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Sourse Breakdown Voltage 900 V
∆V(BR)/∆TJ
R(DS)on Static Drain-to-Source On-Resistance 3.7
VGS(th) Gate Threshold Voltage 2.0 4.0 V
gfs Forward Transconductance 2.3 S VDS=100V , ID=2.2A
IDSS Drain-to-Source Leakage Current 100
IGSS Gate-to-Source Forward Current 100 nA VGS=20V
Qg Total Gate Charge 78 nC VGS=10V
Qgs Gate-to-Source Charge 10 nC VDS=360V
Qgd Gate-to-Drain Charge 42 nC ID=3.6A •
td(on) Turn-On Delay Time 14 VDD=450V
tr Rise Time 25 ns ID=3.6A
td(off) Turn-Off Delay Time 90
tf Fall Time 30
LD Internal Drain Inductance 4.5 nH Between lead , 6 mm from
LS Internal Source Inductance 7.5 package and center of die
CISS Input Capacitance 1200 VGS=0
COSS Output Capacitance 320 pF VDS=25V
CRSS Reverse Transfer Capacitance 200 f=1.0MHz
Breakdown Voltage Temp. Coefficient 1.1
Gate-to-Source Reverse Current -100 nA VGS=-20V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current (Body
Diode)
ISM Pulsed Source Current (Body Diode) Π14 A
VSD Diode Forward Voltage 1.8 V
trr Reverse Recovery Time 430 650 ns
Qrr Reverse RecoveryCharge 1.4 2.1
Thermal resistance
RθJC Junction-to-Case 1.0
RθJC Case-to-Sink, Flat, Greased Surfase 0.50
RθJC Junction-to-Ambient 62
Continuous Drain Current , VGS=10V 3.6
Continuous Drain Current VGS=10V 2.3 A
Power Dissipation 125 W
Linear Derating Factor 1.0
±20
VGS=0 , ID=250µA
V/°C 25°C , ID=1mA
VGS=10V , ID=2.2A•
Ω
VDS=VGS , ID=250µA
VDS=900V, VGS=0V
µA
500
3.6 A
Parameter Min. Typ. Max. Units
µA VDS=720V ,VGS=0V , TJ=125°C
RG=12Ω
RD=120Ω •
contact
IS=3.6A , VGS=0V , TJ=25°C •
TJ=25°C, IF=3.6A, •
µC di/dt=100A/µs
W/°C
W/°C
V
°C
ΠReprtitive rating ; pulse width limited by max. junction temperature .
• VDD=50V , starting TJ=25°C , L=36 mH , RG=25Ω , IAS=3.6A.
Ž ISD≤3.6A , di/dt≤70A/µs , VDD≤600V , TJ≤150°C.
• Pulse width ≤300µs ; duty cycle≤2%
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