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PD - 9.1665
PRELIMINARY
HEXFET® Power MOSFET
l Surface Mount (IRFBF20S)
l Low-profile through-hole (IRFBF20L)
l Available in Tape & Reel (IRFBF20S)
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
2
The D
Pak is a surface mount power package capable of the accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRFBF20L) is available for low-profile applications.
G
2
Pak is suitable for high
IRFBF20S/L
D
S
V
R
2
D Pa k
DSS
DS(on)
= 1.7A
I
D
= 900V
= 8.0Ω
TO-262
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 1.7
@ TC = 100°C Continuous Drain Current, VGS @ 10V 1.1 A
I
D
I
DM
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 54 W
V
GS
E
AS
I
AR
E
AR
dv/d t Peak Diode Recovery dv/dt 1.5 V/ns
T
J
T
STG
Pulsed Drain Current 6.8
Linear Derating Factor 0.43 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 180 mJ
Avalanche Current 1.7 A
Repetitive Avalanche Energy 5.4 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 2.3
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
°C/W
°C
7/10/97
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IRFBF20S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 900 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 1 .1 ––– V/°C Reference to 25°C, ID =1mA
J
Static Drain-to-Source On-Resistance ––– ––– 8.0 Ω VGS =10V, ID = 1.0A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 0.60 ––– ––– S VDS = 50V, ID = 1.0A
Drain-to-Source Leakage Current
––– ––– 100
––– ––– 500 VDS = 720V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– – –– -100
VDS = 900V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– ––– 38 ID = 1.7A
Gate-to-Source Charge ––– ––– 4.7 nC VDS = 360V
Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.0 ––– VDD = 450V
Rise Time ––– 21 ––– ID = 1.7A
Turn-Off Delay Time ––– 5 6 ––– RG = 18Ω
ns
Fall Time ––– 32 ––– RD = 280Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 490 ––– VGS = 0V
Output Capacitance ––– 55 –– – pF VDS = 25V
Reverse Transfer Capacitance ––– 18 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
1.7
6.8
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 1.7A, VGS = 0V
Reverse Recovery Time ––– 350 530 ns TJ = 25°C, IF = 1.7A
Reverse Recovery Charge ––– 0.85 1.3 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFBF20 data and test conditions
=50V, starting TJ = 25°C, L =117mH
= 1.7A. (See Figure 11)
AS
≤ 1.7A, di/dt ≤ 70A/µs, V
DD
≤ V
(BR)DSS
,
D
G
S
Page 3
IRFBF20S/L
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IRFBF20S/L
Page 5
IRFBF20S/L
Page 6
IRFBF20S/L
Page 7
IRFBF20S/L
+
-
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
• dv/dt controlled by R
• Driver same type as D.U.T.
controlled by Duty Factor "D"
• I
SD
• D.U.T. - Device Under Test
Period
-
D =
G
Period
P.W.
+
V
DD
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
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IRFBF20S/L
D2Pak Package Outline
10.54 (.415)
1.40 (.055)
MAX.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010) M B A M
Part Marking Information
D2Pak
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASS IGNM ENT S
1 - G ATE
2 - DRA IN
3 - S OU RC E
10.16 (.400)
RE F .
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
RE F.
MINIMUM RECOMMENDED FOOTP RINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
INTERNATIONAL
RECTIFIER
L OG O
AS SEMBLY
LOT CO DE
F530S
9246
9B 1M
PART NUMBER
A
DATE CODE
(YYW W)
YY = YEAR
WW = WEEK
Page 9
Package Outline
TO-262 Outline
IRFBF20S/L
Part Marking Information
TO-262
Page 10
IRFBF20S/L
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
FEED DIRECTION
13.5 0 (. 532 )
12.8 0 (. 504 )
330.0 0
(14.17 3)
M AX .
NOT ES :
1. CO M F O R MS T O EIA -418 .
2. CONTRO LLIN G DIMEN SION: MILLIME TER .
3. DIM E NS IO N M EAS URE D @ HUB .
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
11.6 0 (.457 )
11.4 0 (.449 )
1.75 (.0 69 )
1.25 (.0 49 )
16.10 (.634)
15.90 (.626)
15.4 2 (.609 )
15.2 2 (.601 )
27.4 0 (1 .079 )
23.9 0 (.9 41)
4
26.40 (1. 03 9)
24.40 (.961)
3
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
60.0 0 (2 .36 2)
M IN .
30.4 0 (1 .19 7)
M A X .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 7/97
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