Page 1
O Dynamic dv/dt Rating
S
D
G
Absolute Maximum Ratin gs
E
Avalanche Current
EARRepetitive Avalanche Energy
Thermal Resistance
Case-to-Sink, Flat, Greased Surface
Document Number: 91119
www.vishay.com
1
O Repetitive Avalanche Rated
O Fast Switching
O Ease of Paralleling
O Simple Drive Requirements
O Lead-Free
Description
Third Generation HEXFETs from International
Rectifier provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
PD - 95507
IRFBE30SPbF
IRFBE30LPbF
HEXFET® Power MOSFET
V
= 800V
DSS
R
= 3.0Ω
DS(on)
ID = 4.1A
ID @ TC = 25°C
I
@ TC = 100°C
D
I
DM
PD @TC = 25°C
V
GS
AS
I
AR
dv/dt
T
J
T
STG
R
JC
θ
R
CS
θ
R
JA
θ
D2Pak
IRFBE30S
Parameter Units
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation W
Linear Derating Factor W/°C
Gate-to-Source Voltage V
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and °C
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
c
c
GS
GS
c
e
@ 10V
@ 10V
d
300 (1.6mm from case )
Max.
4.1
2.6
16
125
1.0
± 20
260
4.1
13
2.0
-55 to + 150
10 lbf•in (1.1N•m)
TO-262
IRFBE30L
A
mJ
A
mJ
V/ns
Parameter Min. Typ. Max. Units
Junction-to-Case ––– ––– 1.0 °C/W
––– 0.50 –––
Junction-to-Ambient ––– ––– 62
07/06/04
Page 2
IRFBE30S/LPbF
S
D
S
D
G
Parameter
Min.
Typ.
Max.
Units
V
Drain-to-Source Breakdown Voltage
800
–––
–––
V∆ΒV
/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.90
–––
V/°C
R
Static Drain-to-Source On-Resistance
–––
–––
3.0ΩV
Gate Threshold Voltage
2.0
–––
4.0Vgfs
Forward Transconductance
2.5
–––
–––SI
Drain-to-Source Leakage Current
–––
–––
100µA–––
–––
500
I
Gate-to-Source Forward Leakage
–––
–––
100nAGate-to-Source Reverse Leakage
–––
–––
-100
QgTotal Gate Charge
–––
–––78nC
QgsGate-to-Source Charge
–––
–––
9.6
QgdGate-to-Drain ("Miller") Charge
–––
–––45t
Turn-On Delay Time
–––12–––
trRise Time
–––33–––nst
Turn-Off Delay Time
–––82–––
tfFall Time
–––30–––
LDInternal Drain Inductance
–––
4.5
–––nHBetween lead,
LSInternal Source Inductance
–––
7.5
–––
from package
C
Input Capacitance
–––
1300
–––
C
Output Capacitance
–––
310
–––pFC
Reverse Transfer Capacitance
–––
190
–––
Diode Characterist ics
Parameter
Min.
Typ.
Max.
Units
ISContinuous Source Current
–––
–––
4.1
ISMPulsed Source Current
–––
–––
16
QrrReverse Recovery Charge
–––
1.8
2.7nCtonForward Turn-On Time
J
di/dt = 100A/µs
Document Number: 91119
www.vishay.com
2
Static @ TJ = 25°C (unless otherwise specified)
(BR)DSS
DSS
DS(on)
GS(th)
DSS
GSS
d(on)
d(off)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I
V
= 10V, ID = 2.5A
GS
VDS = VGS, ID = 250µA
= 100V, ID = 2.5A
V
DS
V
= 800V, VGS = 0V
DS
V
= 640V, VGS = 0V, TJ = 125°C
DS
= 20V
V
GS
V
= -20V
GS
= 4.1A
I
D
VDS = 400V
V
= 10V, See Fig. 6 & 13
GS
= 400V
V
DD
I
= 4.1A
D
= 12Ω
R
G
R
= 95Ω, See Fig. 10
D
= 1mA
D
f
f
f
iss
oss
rss
(Body Diode) A
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
V
=50V, starting TJ = 25°C, L=29mH, RG=25Ω,
DD
I
= 4.1A. (See Figure 12).
AS
I
≤ 4.1A, di/dt ≤ 100A/µs, V
SD
DD
≤ 600,
TJ ≤ 150°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
6mm (0.25in.)
G
and center of die contact
= 0V
V
GS
V
= 25V
DS
ƒ = 1.0MHz, See Fig. 5
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
––– ––– 1.8 V
––– 480 720 ns
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
TJ = 25°C, IS = 4.1A, VGS = 0V
T
= 25°C, IF = 4.1A
f
f
Page 3
IRFBE30S/LPbF
Document Number: 91119
www.vishay.com
3
Page 4
IRFBE30S/LPbF
Document Number: 91119
www.vishay.com
4
Page 5
IRFBE30S/LPbF
Document Number: 91119
www.vishay.com
5
Page 6
IRFBE30S/LPbF
Document Number: 91119
www.vishay.com
6
Page 7
IRFBE30S/LPbF
R
V
+
-
Document Number: 91119
www.vishay.com
7
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
-
G
• D.U.T. - Device Under Test
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D =
+
P. W .
Period
VGS=10V
Reverse
Recovery
Current
e-Applied
oltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Diode Recovery
di/dt
dv/dt
Fig-14 For N -Channel HEXFETS
V
DD
I
SD
Page 8
IRFBE30S/LPbF
R
Document Number: 91119
www.vishay.com
8
2
Pak Package Outline
D
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASS EMBLED ON W W 02, 2000
IN THE ASSEMBLY LINE "L"
Note: "P" in assembly line
pos ition indicates "L ead-Fr ee"
OR
INTERNATIONAL
RECTIFIER
LOGO
AS S EMB L Y
LOT CODE
F530S
INTERNATIONAL
RE CTIFIER
LOGO
AS S E MB L Y
LOT CODE
PART NUMBER
DATE CODE
P = DESIGN ATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WE EK 02
A = ASSEMB LY SITE COD E
F530S
PART NUMBE
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
Page 9
TO-262 Package Outline
Document Number: 91119
www.vishay.com
9
Dimensions are shown in millimeters (inches)
IRFBE30S/LPbF
TO-262 Part Marking Information
THIS IS AN IRL3103L
EXAMPLE:
LOT CO D E 1789
ASS EMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: "P" in assembly line
pos ition indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT COD E
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LIN E C
PART NUMBER
DA TE CO DE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL )
YEAR 7 = 1997
WEEK 19
A = ASSEMBLY SITE CODE
Page 10
IRFBE30S/LPbF
TRR
F
F
)
)
)
Document Number: 91119
www.vishay.com
10
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
EED DIRECTION
1.85 (.073)
1.65 (.065)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
24.30 (.957
23.90 (.941
TRL
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
10.90 (.429)
10.70 (.421)
EED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
07/04
Page 11
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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