Datasheet irfbc40a_sihfbc40a Datasheet

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N-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

Power MOSFET

IRFBC40A, SiHFBC40A

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 600

(Ω)V

DS(on)

(Max.) (nC) 42

(nC) 10

(nC) 20

Configuration Single

= 10 V 1.2

FEATURES

• Low Gate Charge Qg Results in Simple Drive Requirement

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage and Current

• Effective C

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Forward

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFBC40APbF SiHFBC40A-E3 IRFBC40A SiHFBC40A

Specified

oss

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

at 10 V

= 100 °C 3.9

± 30

IDM 25

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

= 25 °C P

Operating Junction and Storage Temperature Range T

dV/dt 6.0 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T c. I

= 25 °C, L = 29.6 mH, Rg = 25 Ω, IAS = 6.2 A (see fig. 12).

≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

600

6.2

570 mJ

6.2 A

13 mJ

125 W

- 55 to + 150

10 lbf · in

1.1 N · m

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91112 www.vishay.com S11-0515-Rev. C, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Page 2

IRFBC40A, SiHFBC40A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.0

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

ΔV

DS/TJ

GS(th)

GSS

DSS

VGS = 10 V ID = 3.7 A

DS(on)

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

- 136 -

oss

-7.0-

rss

oss

eff. VDS = 0 V to 480 V

oss

--10

--20

d(on)

-31-

d(off)

-18-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

MOSFET symbol showing the

integral reverse p - n junction diode

TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

VGS = 0 V, ID = 250 μA 600 - - V

Reference to 25 °C, I

= 1 mA

-0.66-

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

VDS = 600 V, VGS = 0 V - - 25

= 480 V, VGS = 0 V, TJ = 125 °C - - 250

--1.2Ω

VDS = 50 V, ID = 3.7 A 3.4 - - S

- 1036 -

-48-

f = 1.0 MHz, see fig. 5

= 0 V

VGS = 0 V,

= 25 V,

= 1.0 V, f = 1.0 MHz - 1487 -

= 480 V, f = 1.0 MHz - 36 -

--42

= 6.2 A, VDS = 480 V

= 10 V

see fig. 6 and 13

-13-

= 300 V, ID = 6.2 A

= 9.1 Ω, RD = 47 Ω,

see fig. 10

-23-

--6.2

--25

TJ = 25 °C, IS = 6.2 A, VGS = 0 V

--1.5V

- 431 647 ns

-1.82.8μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 to 80 % VDS.

oss

V/°C

μA

nC Gate-Source Charge Q

www.vishay.com Document Number: 91112 2 S11-0515-Rev. C, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Page 3

VDS, Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

0.1

100

0.01

0.1

100

VGS 15 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

Top

Bottom

4.5 V

20 µs PULSE WIDTH TJ = 25 °C

, Drain-to-Source Current (A)

0.1

100

VDS, Drain-to-Source Voltage (V)

100

VGS 15 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

Top

Bottom

4.5 V

20 µs PULSE WIDTH TJ = 150 °C

ID = 6.2 A

VGS = 10 V

TJ, Junction Temperature

DS(on)

, Drain-to-Source On Resistance (Normalized)

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-60 -40 -20 0

IRFBC40A, SiHFBC40A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

100

TJ = 150 °C

TJ = 25 °C

, Drain-to-Source Current (A)

VDS = 50 V

0.1

4.0

5.0

6.0

20 µs PULSE WIDTH

7.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

Vishay Siliconix

9.0

8.0

10.0

Document Number: 91112 www.vishay.com S11-0515-Rev. C, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Page 4

IRFBC40A, SiHFBC40A

QG, Total Gate Charge (nC)

, Gate-to-Source Voltage (V)

ID = 6.2 A

VDS = 480 V VDS = 300 V VDS = 120 V

For Test Circuit

See Fig. 13

VSD, Source-to-Drain Voltage (V)

, Reverse Drain Current (A)

TJ = 150 °C

TJ = 25 °C

VGS = 0 V

100

0.4

0.8

0.6

1.0

1.2

0.1

100

1000

10000

0.1

100

, Drain Current (A)

VDS, Drain-to-Source Voltage (V)

OPERATING IN THIS AREA LIMITED

BY R

DS(on)

10 ms

1 ms

100 µs

10 µs

TC = 25 °C TJ = 150 °C Single Pulse

Vishay Siliconix

100000

10000

1000

100

C, Capacitance (pF)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

VGS = 0 V, f = 1 MHz C

= Cgs + Cgd, Cds SHORTED

iss

= C

rss

= Cds + C

oss

VDS, Drain-to-Source Voltage (V)

iss

oss

rss

100

1000

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91112 4 S11-0515-Rev. C, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Page 5

TC, Case Temperature (°C)

, Drain Current (A)

100

125

150

1.0

2.0

3.0

4.0

5.0

7.0

6.0

90 %

10 %

d(on)

d(off)

IRFBC40A, SiHFBC40A

Fig. 9 - Maximum Drain Current vs. Case Temperature

10 V

Pulse width ≤ 1 µs Duty factor ≤ 0.1 %

Vishay Siliconix

D.U.T.

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

)

thJC

D = 0.50

0.20

0.10

0.1

Thermal Response (Z

0.05

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

t 1, Rectangular Pulse Duration (s)

Notes:

1. Duty factor D = t1/ t

2. Peak TJ = PDM x Z

thJC

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

+ T

Document Number: 91112 www.vishay.com S11-0515-Rev. C, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Page 6

IRFBC40A, SiHFBC40A

0.01 Ω

D.U.T

Driver

15 V

20 V

1000

800

600

400

200

150

125

100

TOP 2.8 A

3.9 A BOTTOM 6.2 A

Starting TJ, Junction Temperature (°C)

, Single Pulse Avalanche Energy (mJ)

1200

1400

D.U.T.

3 mA

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit

820

800

780

760

Avalanche Voltage (V)

DSav,

740

720

0 1.0 2.0 3.0 4.0 5.0 7.06.0

IAV, Avalanche Current (A)

Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanche Current

www.vishay.com Document Number: 91112 6 S11-0515-Rev. C, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

This datasheet is subject to change without notice.

10 V

Charge

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

www.vishay.com/doc?91000

Page 7

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied voltage

Reverse recovery current

Body diode forward

current

= 10 Va

Driver gate drive

D.U.T. l

waveform

D.U.T. V

waveform

Inductor current

D =

P.W.

Period

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

• Driver same type as D.U.T.

•

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Note

a. V

= 5 V for logic level devices

IRFBC40A, SiHFBC40A

Vishay Siliconix

Fig. 14 - For N-Channel

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91112

Document Number: 91112 www.vishay.com S11-0515-Rev. C, 21-Mar-11 7

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Page 8

TO-220AB

* M

L(1)

H(1)

Ø P

J(1)

b(1)

e(1)

Package Information

Vishay Siliconix

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183

b 0.69 1.01 0.027 0.040

b(1) 1.20 1.73 0.047 0.068

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.09 6.48 0.240 0.255

J(1) 2.41 2.92 0.095 0.115

L 13.35 14.02 0.526 0.552

L(1) 3.32 3.82 0.131 0.150

Ø P 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118

ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471

Note

* M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM

Document Number: 71195 www.vishay.com Revison: 01-Nov-10

Page 9

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1