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PROVISIONAL
SMPS MOSFET
PD - 93800A
IRFBA35N60C
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
V
DSS
R
DS(on)
max I
600V 0.080Ω 35A
Benefits
l Low Gate Charge Qg Reduces Drive
Required
l Improved Gate Resistance for Faster
Switching
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Lowest Conduction Loss in Package
Super-220™
Outline
l Effective C
specified (See AN 1001)
OSS
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 35
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 22 A
I
DM
PD @TC = 25°C Power Dissipation 250 W
V
GS
dv/dt Peak Diode Recovery dv/dt TBD V/ns
T
J
T
STG
Pulsed Drain Current 140
Linear Derating Factor 2.0 W/°C
Gate-to-Source Voltage ± 20 V
Operating Junction and -40 to + 150
Storage Temperature Range -55 to + 150
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Recommended clip force 20 N
D
Applicable Off Line SMPS Topologies:
l Power Factor Correction Boost
l Full Bridge
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10/25/99
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IRFBA35N60C
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 216 ––– VGS = 0V, VDS = 0V to 480V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.54 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.080 Ω VGS = 10V, ID = 21A
Gate Threshold Voltage 4.0 ––– 6.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 100
––– ––– 500 VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 600V, VGS = 0V
µA
nA
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 16 ––– ––– S VDS = 50V, ID = 21A
Total Gate Charge ––– – –– 280 ID = 21A
Gate-to-Source Charge ––– ––– 59 nC VDS = 360V
Gate-to-Drain ("Miller") Charge ––– ––– 140 VGS = 10V
Turn-On Delay Time ––– 28 ––– VDD = 300V
Rise Time ––– 89 ––– ID = 21A
Turn-Off Delay Time ––– 62 ––– RG = 1.3Ω
ns
Fall Time ––– 33 ––– RD = 14Ω
Input Capacitance ––– 6170 ––– VGS = 0V
Output Capacitance ––– 3030 ––– VDS = 25V
Reverse Transfer Capacitance ––– 160 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 14310 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 132 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– TBD mJ
Avalanche Current ––– 21 A
Repetitive Avalanche Energy ––– 25 mJ
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.50
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient ––– 58
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
35
140
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 21A, VGS = 0V
Reverse Recovery Time ––– 550 820 ns TJ = 25°C, IF = 21A
Reverse RecoveryCharge ––– 12 18 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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D
S
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Super-220™ Package Outline
IRFBA35N60C
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
= 25°C, L = TBDmH
J
= 35A, dv/dt = TBD V/ns.
AS
≤ TBDA, di/dt ≤ TBDA/µs, V
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
≤ V
DD
(BR)DSS
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
Data and specifications subject to change without notice. 10/99
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