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PD - 95416
Document Number: 91104
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IRFB9N65APbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Lead-Free
V
DSS
650V 0.93Ω 8.5A
R
DS(on)
max I
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.5
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.4 A
I
DM
PD @TC = 25°C Power Dissipation 167 W
V
GS
dv/dt Peak Diode Recovery dv/dt 2.8 V/ns
T
J
T
STG
Pulsed Drain Current 21
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
°C
D
Typical SMPS Topologies
l Single Transistor Flyback
l Single Transistor Forward
Notes through are on page 8
06/16/04
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IRFB9N65APbF
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D
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Document Number: 91104
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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 84 ––– VGS = 0V, VDS = 0V to 520V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 650 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.67 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.93 Ω VGS = 10V, ID = 5.1.A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 520V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
µA
nA
= 650V, VGS = 0V
V
DS
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 3.9 ––– ––– S VDS = 50V, ID = 3.1A
Total Gate Charge ––– ––– 48 ID = 5.2A
Gate-to-Source Charge ––– ––– 12 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 19 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 325V
Rise Time ––– 20 ––– ID = 5.2A
Turn-Off Delay Time ––– 34 ––– RG = 9.1Ω
ns
Fall Time ––– 18 ––– RD = 62Ω,See Fig. 10
Input Capacitance ––– 1417 ––– VGS = 0V
Output Capacitance ––– 177 ––– VDS = 25V
Reverse Transfer Capacitance ––– 7.0 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 1912 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 48 ––– VGS = 0V, VDS = 520V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 325 mJ
Avalanche Current ––– 5.2 A
Repetitive Avalanche Energy ––– 16 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 5.2A, VGS = 0V
Reverse Recovery Time ––– 493 739 ns TJ = 25°C, IF = 5.2A
Reverse RecoveryCharge ––– 2.1 3.2 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
5.2
21
showing the
A
p-n junction diode.
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IRFB9N65APbF
Document Number: 91104
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100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
4.5V
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
1
D
I , Drain-to-Source Current (A)
0.1
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
°
T = 150 C
J
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
5.2A
10
1
D
I , Drain-to-Source Current (A)
0.1
4.0 5.0 6.0 7.0 8.0 9.0
°
T = 150 C
J
°
T = 25 C
J
V = 100V
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
DS
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
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IRFB9N65APbF
0
A
Document Number: 91104
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2000
1600
1200
800
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, Capacitance (pF)
400
0
1 10 100 1000
C
rss
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
5.2A
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
D
400V
V = 520V
DS
V = 325V
DS
V = 130V
DS
FOR TEST CIRCUIT
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
10
°
T = 150 C
J
1
°
T = 25 C
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
10us
10
1
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
10 100 1000 1000
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
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V
9
1
V
+
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10.0
Document Number: 91104
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8.0
IRFB9N65APbF
R
V
DS
V
GS
R
G
D
D.U.T.
V
DD
6.0
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
D = 0.50
thJC
0.20
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
DS
0%
0%
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
0.1
0.10
P
1 2
DM
t
1
t
2
0.05
Thermal Response (Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFB9N65APbF
V
S
Current Regulator
I
A
A
Document Number: 91104
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15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
Ω
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
Q
GD
DD
800
TOP
600
400
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
800
I
D
2.3A
3.3A
5.2A
°
G
Charge
Fig 13a. Basic Gate Charge Waveform
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
+
V
D
-
I
D
Fig 13b. Gate Charge Test Circuit
780
760
740
DSav
720
V , Avalanche Voltage (V)
700
0123456
I , Avalanche Current (A)
av
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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IRFB9N65APbF
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Document Number: 91104
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Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P. W .
+
V
DD
VGS=10V
*
Reverse
Recovery
Current
e-Applied
oltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
di/dt
Diode Recovery
dv/dt
Fig 14. For N-Channel HEXFET® Power MOSFETs
V
DD
I
SD
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IRFB9N65APbF
K
R
Document Number: 91104
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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
1.40 (.055)
1.15 (.045)
2X
10.29 (.405)
4
1 2 3
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 ( .555)
13.47 ( .530)
3X
2.54 (.100)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
3.78 (.149)
3.54 (.139)
- A -
6.47 (.255)
6.10 (.240)
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
0.93 (.037)
3X
0.69 (.027)
0.36 (.014) M B A M
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
HEXFET
1 - GATE
2 - DRAIN
1- GATE
3 - SOURCE
2- DRAIN
3- SOURCE
4 - DRAIN
4- DRAIN
0.55 (.022)
0.46 (.018)
TO-220AB Part Marking Information
EXAMPLE:
T H IS IS AN IRF 1010
LOT CODE 1789
ASSE MBLE D ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT ERNAT I ONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
IGBTs, CoPAC
1- GA TE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
PART NUMBE
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
C
eff. is a fixed capacitance that gives the same charging time
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 24mH
J
AS
≤ 5.2A, di/dt ≤ 90A/µs, V
= 5.2A. (See Figure 12)
≤ V
DD
(BR)DSS
,
oss
as C
oss
while V
is rising from 0 to 80% V
DS
Uses IRFIB5N65A data and test conditions
DSS
TJ ≤ 150°C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
06/04
Page 9
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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