Datasheet IRFB4020PbF Datasheet

PD - 97195

DIGITAL AUDIO MOSFET

Features

• Key parameters optimized for Class-D audio

amplifier applications

• Low R

• Low Q

efficiency

• Low Q

for improved efficiency

DSON

and QSW for better THD and improved

G

for better THD and lower EMI

RR

V

DS

R

DS(ON)

Qg typ.

typ.

Q

sw

R

G(int)

max

T

J

typ. @ 10V

typ.

IRFB4020PbF

Key Parameters

200 V

80 18 nC

6.7 nC

3.2 Ω

175 °C

m

:

• 175°C operating junction temperature for

ruggedness

D

• Can deliver up to 300W per channel into 8Ω load in

half-bridge configuration amplifier

G

S

TO-220AB

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications.

Absolute Maximum Ratings

Parameter Units

V

DS

V

GS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V

I

@ TC = 100°C Continuous Drain Current, VGS @ 10V

D

I

DM

@TC = 25°C

P

D

PD @TC = 100°C

T

J

T

STG

Drain-to-Source Voltage V

Gate-to-Source Voltage

Pulsed Drain Current

Power Dissipation

Linear Derating Factor W/°C Operating Junction and °C

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

c f f

Max.

200

±20

18

13

52

100

52

0.70

-55 to + 175

300

10lbxin (1.1Nxm)

A

W

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θ

CS

R

θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W Junction-to-Ambient

f

––– 1.43

––– 62

Notes  through  are on page 2

www.irf.com 1

03/03/06

IRFB4020PbF

/

g

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

∆Β

R

V

∆V

I

DSS

I

GSS

Q

R

t

d(on)

t

r

t

d(off)

t

f

C

L

fs

D

S

DSS

V

DS(on)

GS(th)

g

Q

gs1

Q

gs2

Q

gd

Q

godr

sw

G(int)

iss

oss

rss

eff.

oss

DSS

∆

/∆T

T

Drain-to-Source Breakdown Voltage 200 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 80 100

m

Gate Threshold Voltage 3.0 ––– 4.9 V

Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C

J

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Forward Transconductance 24 ––– ––– S

Total Gate Charge ––– 18 29

Pre-Vth Gate-to-Source Charge ––– 4.5 –––

Post-Vth Gate-to-Source Charge ––– 1.4 ––– nC

Gate-to-Drain Charge ––– 5.3 –––

Gate Charge Overdrive ––– 6.8 ––– See Fig. 6 and 18 Switch Charge (Q

Internal Gate Resistance ––– 3.2 –––

gs2

+ Qgd)

––– 6.7 –––

Ω

Turn-On Delay Time ––– 7.8 –––

Rise Time ––– 12 –––

Turn-Off Delay Time ––– 16 ––– ns

Fall Time ––– 6.3 –––

Input Capacitance ––– 1200 –––

Output Capacitance ––– 91 ––– pF

Reverse Transfer Capacitance ––– 20 –––

Effective Output Capacitance ––– 110 –––

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductance ––– 7.5 ––– from package

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

Ω

= 10V, ID = 11A

V

GS

VDS = VGS, ID = 100µA

V

= 200V, VGS = 0V

DS

V

= 200V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

= -20V

V

GS

V

= 50V, ID = 11A

DS

VDS = 100V

= 10V

V

GS

I

= 11A

D

V

= 100V, VGS = 10V

DD

I

= 11A

D

R

= 2.4Ω

G

= 0V

V

GS

= 50V

V

DS

ƒ = 1.0MHz, See Fig.5

= 0V, VDS = 0V to 160V

V

GS

and center of die contact

= 1mA

D

e

e

D

G

S

Avalanche Characteristics

Parameter Units

E

AS

I

AR

E

AR

Single Pulse Avalanche Energy

Avalanche Current

g

Repetitive Avalanche Energy

d

g

Typ. Max.

––– 94

See Fig. 14, 15, 16a, 16b

mJ

A

mJ

Diode Characteristics

Parameter Min. Typ. Max. Units

IS @ TC = 25°C

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T  Pulse width ≤ 400µs; duty cycle ≤ 2%.

Continuous Source Current ––– ––– 18

(Body Diode) A Pulsed Source Current ––– ––– 52

(Body Diode)

c

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 82 120 ns

Reverse Recovery Charge ––– 280 420 nC

= 25°C, L = 1.62mH, RG = 25Ω, I

J

AS

= 11A.

MOSFET symbol

showing the integral reverse

p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V

= 25°C, IF = 11A

T

J

di/dt = 100A/µs

 R

is measured at T

θ

of approximately 90°C.

J

 Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive

avalanche information.

Conditions

e

2 www.irf.com

IRFB4020PbF

100

TOP 15V

) A

(

10

t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

BOTTOM 5.0V

1

0.1

VGS

12V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

60µs PULSE WIDTH

≤

Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

V

= 25V

DS

≤

) A

( t

n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

60µs PULSE WIDTH

10

1

TJ = 175°C

TJ = 25°C

0.1 2 3 4 5 6 7 8

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

100

TOP 15V

) A

( t n e

r

10

r u

C e

c

r u o S

o

t

n

i a

r D

, I

BOTTOM 5.0V

1

D

VGS

12V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

60µs PULSE WIDTH

≤

Tj = 175°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.5

e c n a

t s

i s e

R n O e

)

c

d

r

e

u

z

i

o

l

S

a

m

o

t

r

-

o

n

i

N

(

a

r D

,

) n o

( S D

R

3.0

2.5

2.0

1.5

1.0

0.5

ID = 11A

V

= 10V

GS

0.0

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

10000

) F p

( e

c n a

t

i c a p a

C ,

C

1000

100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

rss

+ Cgd, C

+ C

iss

oss

SHORTED

ds

gd

10

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

12.0 ID= 11A

)

10.0

V

( e

g a

t

l

8.0

o V

e c

r u

6.0

o S

o

t

e

t

4.0

a G

,

S G

2.0

V

VDS= 160V

VDS= 100V

VDS= 40V

0.0 0 5 10 15 20

QG, Total Gate Charge (nC)

www.irf.com 3

IRFB4020PbF

τ

100

1000

OPERATION IN THIS AREA

) A

( t n e

r

10

u C n

i a

r D e

s

r e v

1

e R

,

D S

I

TJ = 175°C

TJ = 25°C

V

GS

= 0V

0.1

0.2 0.4 0.6 0.8 1.0 1.2

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D ,

D

I

100

10

1

0.1

Tc = 25°C

0.01 Tj = 175°C

Single Pulse

0.001 1 10 100 1000

VSD, Source-to-Drain Voltage (V)

LIMITED BY RDS(on)

100µsec

DC

1msec

10msec

VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

20

18

16

)

14

A

( t n

12

e

r

r u

C

10

n

i a

r

8

D ,

6

D

I

4

2

0

25 50 75 100 125 150 175

TJ , Junction Temperature (°C)

5.0

) V

( e

g a

4.0

t

l o V

d

l o h s e

3.0

r h T

e

t a

G ,

)

2.0

h

t

( S G

V

ID = 100µA

1.0

-75 -50 -25 0 25 50 75 100 125150 175 200

TJ , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Junction Temperature

Fig 10. Threshold Voltage vs. Temperature

10

)

C

1

Z (

e s n o p s e

R l a

m

r e h T

J h

t

0.01

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01 SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

2

R

1

τ

2

3

R

2

3

τ

3

τ

2

3

Ri (°C/W) τi (sec)

4

R

4

0.0283 0.000007

τ

C

τ

0.3659 0.000140

4

τ

4

0.7264 0.001376

0.3093 0.007391

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

4 www.irf.com

)

300

Ω

m (

275

e c n

250

a

t s

i s

225

e R n

200

O e

c

r

175

u o S

-

150

o

t

n

125

i a

r D

100

,

) n o

75

( S D

50

R

TJ = 125°C

TJ = 25°C

ID = 11A

5 6 7 8 9 10 11 12 13 14 15 16

V

Gate -to -Source Voltage (V)

GS,

Fig 12. On-Resistance vs. Gate Voltage

1000

IRFB4020PbF

400

) J

m

( y

g

r e n

300

E e

h c n a

l a v

200

A e

s

l u P

e

l g

100

n

i S ,

S A

E

TOP 1.6A

BOTTOM11A

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 13. Maximum Avalanche Energy vs. Drain Current

I

D

2.4A

Duty Cycle = Single Pulse

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses

) A

( t n e

r

r u

C e

h c n a

l a v A

100

10

1

0.1

0.01

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current Vs.Pulsewidth

100

TOP Single Pulse BOTTOM 1.0% Duty Cycle

) J

80

m

( y

g

r e n

60

E e

h c n a

l

40

a v

A ,

R A

20

E

ID = 11A

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 15. Maximum Avalanche Energy vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

. This is validated for

jmax

every part type.

2. Safe operation in Avalanche is allowed as long asT

jmax

is

not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 17a, 17b.

4. P

= Average power dissipation per single

D (ave)

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 14, 15).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

AS (AR)

= P

·f

av

D (ave)·tav

thJC

www.irf.com 5

IRFB4020PbF

A

15V

V

(BR)DSS

t

p

DRIVER

+

V

DD

-

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 16a. Unclamped Inductive Test Circuit

L

D.U.T

D

+

-

V

DD

V

DS

V

GS

Pulse Width < 1µs

Duty Factor < 0.1%

I

AS

Fig 16b. Unclamped Inductive Waveforms

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms

Vds

L

0

DUT

VCC

Vgs(th)

1K

Qgs1

Qgs2 Qgd Qgodr

Fig 18a. Gate Charge Test Circuit

6 www.irf.com

Fig 18b Gate Charge Waveform

Id

Vgs

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

IRFB4020PbF

TO-220AB Part Marking Information

(;$03/(

TO-220AB packages are not recommended for Surface Mount Application.

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5(& 7 ,),(5

/2*2

$66(0%/< /27 &2'(

3$57180%(5

'$7(&2'( <($5  :((. /,1(&

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 03/06

Note: For the most current drawings please refer to the IR website at:

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