Datasheet irfb16n60lpbf Datasheet

SMPS MOSFET

C

c

s

f

Document Number: 91097

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1

IRFB16N60LPbF

PD - 95471

Applications

HEXFET® Power MOSFET

• Zero Voltage Switching SMPS

V

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

DSSRDS(on)

600V

385m

• Motor Control applications

• Lead-Free

Features and Benefits

• SuperFast body diode eliminates the need for external diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise immunity

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C

I

@ TC = 100°

D

I

DM

P

@TC = 25°C

D

V

GS

dv/dt T

J

T

STG

Continuous Drain Current, V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation 310 W

Linear Derating Factor 2.5 W/°C Gate-to-Source Voltage ±30 V

Peak Diode Recovery dv/dt

Operating Junction and -55 to + 150

Storage Temperature Range °C

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Mounting torque, 6-32 or M3 screw 1.1(10) N•m (lbf•in)

GS

d

@ 10V

16

10 A

60

10 V/ns

Diode Characteristics

Symbol Parameter Min. Typ. Max. Unit

I

S

I

SM

V

t

rr

Q

I

RRM

t

on

SD

rr

Continuous Source Current ––– ––– 16 MOSFE T symbol

(Body Diode) A showing the Pulsed Source Current ––– ––– 60 integral reverse



(Body Diode)

Diode Forward Voltage ––– ––– 1.5 V

Reverse Recovery Time ––– 130 200 ns

Reverse Recovery Charge ––– 450 670 nC

Reverse Recovery Current ––– 5.8 8.7 A

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

c

––– 240 360

––– 1080 1620

p-n junction diode. T

T

typ.

Trr typ.

Ω 130ns 16A

TO-220AB

.

Conditions

G

= 25°C, IS = 16A, VGS = 0V

J

= 25°C, IF = 16A

J

= 125°C, di/dt = 100A/µs

J

= 25°C, IS = 16A, VGS = 0V

J

= 125°C, di/dt = 100A/µs

J

= 25°C

J

I

D

f

7/7/04

D

S

IRFB16N60LPbF

/

Single Pulse Aval

gy

d

Aval

c

R

gy

c

Document Number: 91097

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2

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

∆

V

R

DS(on)

V

GS(th)

I

DSS

I

GSS

R

G

(BR)DSS

Drain-to-Source Breakdown Voltage 600 ––– ––– V

∆

T

Breakdown Voltage Temp. Coefficient ––– 0.39 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 385 460

Gate Threshold Voltage 3.0 ––– 5.0 V

Drain-to-Source Leakage Current ––– ––– 50 µA

––– ––– 2.0 mA

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Internal Gate Resistance ––– 0.79 –––

VGS = 0V, ID = 250µA

Reference to 25°C, I

V

mΩ

GS

V

DS

V

DS

V

DS

V

GS

V

GS

Ω

f = 1MHz, open drain

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 8.3 ––– ––– S Q

Q

t

C

g

gs

gd

d(on)

r

d(off)

f

iss

oss

rss

oss

eff.

eff. (ER)

Total Gate Charge ––– ––– 100

Gate-to-Source Charge ––– ––– 30 nC

Gate-to-Drain ("Miller") Charge ––– ––– 46

Turn-On Delay Time ––– 20 –––

Rise Time ––– 44 ––– ns

Turn-Off Delay Time ––– 28 –––

Fall Time ––– 5.5 –––

Input Capacitance ––– 2720 –––

Output Capacitance ––– 260 –––

Reverse Transfer Capacitance ––– 20 ––– pF

Effective Output Capacitance ––– 120 –––

Effective Output Capacitance ––– 100 –––

(Energy Related)

VDS = 50V, ID = 9.0A

I

= 16A

D

V

DS

V

GS

VDD = 300V

ID = 16A

R

G

V

GS

VGS = 0V

V

DS

ƒ = 1.0MHz, See Fig. 5

V

GS

Avalanche Characteristics

Symbol

E

AS

I

AR

E

AR

anche Current

epetitive Avalanche Ener

Parameter Typ. Units

anche Ener



––– mJ

––– A

––– mJ

Thermal Resistance

Symbol Parameter Typ. Units

R

JC

θ

R

JA

θ

Junction-to-Case ––– °C/W

Junction-to-Ambient ––– 62

Conditions

= 1mA

D

= 10V, ID = 9.0A

f

= VGS, ID = 250µA

= 600V, VGS = 0V

= 480V, VGS = 0V, TJ = 125°C

= 30V

= -30V

Conditions

= 480V

= 10V, See Fig. 7 & 15

= 1.8Ω

= 10V, See Fig. 11a & 11b

= 25V

= 0V,VDS = 0V to 480V

Max.

310

16

31

Max.

0.4

f

g

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See Fig. 11)

 Starting T

I

AS

 I

SD

TJ ≤ 150°C.

= 25°C, L = 2.5mH, RG = 25Ω,

J

= 16A, dv/dt = 10V/ns. (See Figure 12a)

≤ 16A, di/dt ≤ 340A/µs, V

DD

≤ V

(BR)DSS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

while VDS is rising from 0 to 80% V

oss

C

eff.(ER) is a fixed capacitance that stores the same energy

oss

as C

while VDS is rising from 0 to 80% V

,

oss

DSS

.

IRFB16N60LPbF

Document Number: 91097

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3

1000

TOP 15V

100

) A

( t n e

r

10

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

BOTTOM 5.0V

1

0.1

0.01

VGS

12V 10V

9.0V

8.0V

7.0V

6.0V

5.0V

20µs PULSE WIDTH Tj = 25°C

0.001

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000

)

Α

100

(

t n e

r

r u

C

10

e c

r u o S

-

1

o

t

n

i a

r D

,

0.1

D

I

TJ = 25°C

TJ = 150°C

V

= 50V

DS

20µs PULSE WIDTH

0.01

4 6 8 10 12 14 16

VGS, Gate-to-Source Voltage (V)

100

TOP 15V

) A

( t

10

n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

BOTTOM 5.0V

1

0.1

VGS

12V 10V

9.0V

8.0V

7.0V

6.0V

20µs PULSE WIDTH Tj = 150°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 15A

V

= 10V

GS

2.5

2.0

) d e z

i

1.5

l a

m

r o

N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

5.0V

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

IRFB16N60LPbF

Document Number: 91097

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4

100000

10000

) F p

( e

1000

c n a

t

i c a p

100

a C

, C

10

1

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

oss

= C

gd

ds

C

rss

C

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

12.0 ID= 15A

)

10.0

V

( e

g a

t

l

8.0

o V

e c

r u

6.0

o S

o

t

e

t

4.0

a G

,

S G

2.0

V

0.0 0 10203040506070

Q

VDS= 480V

VDS= 300V

VDS= 120V

Total Gate Charge (nC)

G

+ Cgd, C

+ C

gd

iss

oss

SHORTED

ds

25

20

)

15

J µ

( y

g

r e n

10

E

5

0

0 100 200 300 400 500 600 700

V

Drain-to-Source Voltage (V)

DS,

Fig 6. Typ. Output Capacitance

Stored Energy vs. V

100.00

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

10.00

1.00

0.10

TJ = 150°C

TJ = 25°C

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD, Source-to-Drain Voltage (V)

DS

V

GS

= 0V

Fig 7. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 8. Typical Source-Drain Diode

Forward Voltage

IRFB16N60LPbF

Document Number: 91097

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5

1000

OPERATION IN THIS AREA

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D ,

I

100

10

1

D

Tc = 25°C Tj = 150°C Single Pulse

LIMITED BY RDS(on)

100µsec

1msec

10msec

0.1

1 10 100 1000 10000

VDS, Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

18

16

14

) A

(

12

t n e

r

10

u C n

i

8

a

r D

6

,

D

I

4

2

0

25 50 75 100 125 150

TC , Case Temperature (°C)

Fig 10. Maximum Drain Current vs.

Case Temperature

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 11a. Switching Time Test Circuit

V

DS

90%

+

V

DD

-

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 11b. Switching Time Waveforms

IRFB16N60LPbF

Document Number: 91097

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6

1

)

C J h

t

Z (

e s n o p s e

R l a

m

r e h T

0.001

0.1

0.01

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

Not es:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJC C

1 2

P

DM

t

t1 , Rectangular Pulse Duration (sec)

Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1

t

2

5.0

) V

(

4.5

e g a

t

l o

4.0

V d

l o h s

3.5

e

r h

t e

t a

3.0

G

) h

t

( S

2.5

G

V

2.0

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 250µA

TJ , Temperature ( °C )

Fig 13. Threshold Voltage vs. Temperature

IRFB16N60LPbF

A

Document Number: 91097

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7

600

) J

m

( y

500

g

r e n E

e

400

h c n a

l a v

300

A e

s

l u P

200

e

l g n

i S

100

,

S A

E

0

25 50 75 100 125 150

TOP 7.2A

BOTTOM16A

Starting TJ , Junction Temperature (°C)

Fig 14a. Maximum Avalanche Energy

vs. Drain Current

15V

V

DS

L

DRIVER

I

D

10A

V

(BR)DSS

t

p

R

G

20V

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

Fig 14b. Unclamped Inductive Test Circuit

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 15a. Gate Charge Test Circuit

I

AS

Fig 14c. Unclamped Inductive Waveforms

Q

G

VGS V

Q

GS

V

G

Q

GD

Charge

Fig 15b. Basic Gate Charge Waveform

IRFB16N60LPbF

Document Number: 91097

www.vishay.com

8

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P. W .

Period

+

V

DD

-

VGS=10V

*

Reverse Recovery Current

Re-Applied Voltage

D.U.T. ISDWaveform

Body Diode Forward

Current

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

di/dt

Diode Recovery

dv/dt

V

DD

I

SD

Fig 16. For N-Channel HEXFET® Power MOSFETs

TO-220AB Package Outline

Document Number: 91097

www.vishay.com

9

Dimensions are shown in millimeters (inches)

2.87 (. 113)

2.62 (. 103)

15.24 (.600)

14.84 (.584)

14.09 (. 555)

13.47 (. 530)

10.54 (.415)

10.29 (.405)

1 2 3

4

6.47 (.255)

6.10 (.240)

1.15 (.0 45) MIN

4.06 ( .160)

3.55 ( .140)

3.78 (.1 49)

3.54 (.1 39)

- A -

4.69 (.185)

4.20 (.165)

IRFB16N60LPbF

- B -

1.32 (.052)

1.22 (.048)

LEAD ASSI GNMENTS

LEAD ASSIGNMENTS

HEXFET

1 - GAT E 2 - DRA IN

1- GATE

3 - SOU RCE

2- DRAIN 3- S OURCE

4 - DRA IN

4- DRAIN

IGBTs, C oPACK

1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR

0.93 (. 037)

3X

1.40 (.055)

3X

1.15 (.045)

2.54 (.1 00)

NOTES:

1 DIMENSION ING & TOLER ANC ING PER AN SI Y14 .5M, 198 2. 3 OUTLINE CONFOR MS TO JE DEC OUTL INE TO- 220A B. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

0.69 (. 027)

0.36 (.014) M B A M

3X

2.92 (. 115)

2.64 (. 104)

TO-220AB Part Marking Information

EXAMPLE:

TO-220AB package is not recommended for Surface Mount Application.

T HIS IS AN IRF 1010

LOT CODE 1789 ASS EMBL E D ON WW 19, 1997 IN THE ASSEMBLY LINE "C"

Note: "P" in assembly line position indicates "Lead-Free"

INT E RN ATIONAL

RE CT IFIE R

LOGO

AS SE MB LY LOT CODE

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

0.55 (. 022)

0.46 (. 018)

PART NU MBER

DATE CODE YEAR 7 = 1997 WEEK 19 LINE C

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

7/04

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1