Page 1
PD - 90581
REPETITIVE A V ALANCHE AND dv/dt RA TED IRF AF40
HEXFETTRANSISTORS
900V, N-CHANNEL
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRFAF40 900V 2.5Ω 4.3Α
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
TO-3
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 4. 3
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 2. 7
I
DM
PD @ TC = 25°C Max. Power Dissipation 12 5 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 1.5
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ 17
Linear Derating Factor 1 .0 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 530 mJ
Avalanche Current ➀ 4.3 A
Repetitive Avalanche Energy ➀ 12.5 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
www.irf.com 1
A
V/ns
o
C
01/24/01
Page 2
IRFAF40
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S + LD
C
iss
C
oss
C
rss
* Equipment Limitation
Drain-to-Source Breakdown Voltage 90 0 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 1. 2 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 2.5 VGS = 10V, ID =2.7A➃
Resistance — — 2.9 VGS = 10V, ID =4.3A ➃
Gate Threshold Voltage 2. 0 — 4.0 V VDS = VGS, ID =250µA
Forward Transconductance 3. 6 —— S ( ) VDS > 15V, IDS =2.7A ➃
Zero Gate Voltage Drain Current — — 2 5 VDS=720V , VGS=0V
— — 250 VDS = 720V
Gate-to-Source Leakage Forward — — 1 00 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 5 3 — 12 0 V
Gate-to-Source Charge 4.8 — 1 1 nC VDS = 450V
Gate-to-Drain (‘Miller’) Charge 30 — 6 8
Turn-On Delay Time — — 2 4 VDD =400V*, ID = 4.3A,
Rise Time — — 3 9 RG =9.1Ω
Turn-Off Delay Time — — 1 70
Fall Time — — 4 4
Total Inductance — 6 .1 —
Input Capacitance — 1500 VGS = 0V, VDS = 25V
Output Capacitance — 1 90 — pF f = 1.0MHz
Reverse Transfer Capacitance — 7 2 —
Ω
Ω
µA
nA
ns
nH
VGS = 0V, TJ = 125°C
10V, ID = 4.3A
GS =
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 4.3
S
I
Pulse Source Current (Body Diode) ➀ —— 17
SM
V
Diode Forward Voltage — — 1 . 8 V Tj = 25°C, IS =4.3A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 1100 nS Tj = 25°C, IF =4.3A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 6 .7 µC VDD ≤ 50V ➃
RR
t
Forward
on
A
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
For footnotes refer to the last page
2 www.irf.com
Junction to Case — — 1. 0
Junction to Ambient — — 30 Typical socket mount
°C/W
Page 3
IRFAF40
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com 3
Page 4
IRFAF40
13 a& b
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
4 www.irf.com
Page 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFAF40
R
D.U.T.
t
d(off)tf
D
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
+
V
DD
-
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com 5
Page 6
IRFAF40
15V
DRIVER
+
-
R
G
10V
20V
V
DS
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
Q
GD
V
DD
A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
DS
-
V
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
GS
3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
Page 7
Foot Notes:
➂ I
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ V
= 50V, starting TJ = 25°C,
DD
Peak IL = 4.3A,
≤ 4.3A, di/dt ≤ 110A/µs,
SD
VDD≤ 900V, TJ ≤ 150°C
Suggested RG =9.1 Ω
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-204AA (Modified TO-3)
IRFAF40
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 1/01
www.irf.com 7
Loading...