Datasheet IRFAC42, IRFAC40 Datasheet (Intersil)

January 1998

Semiconductor

IRFAC40,

IRFAC42

6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs

• 6.2A and 5.4A, 600V

•r

DS(ON)

• Repetitive Avalanche Energy Rated

• Simple Drive Requirements

• Ease of Paralleling

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

= 1.2Ω and 1.6Ω

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRFAC40 TO-204AA IRFAC40
IRFAC42 TO-204AA IRFAC42

NOTE: When ordering, include the entire part number.

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly Developmental Type TA17426.

Symbol

D

G

S

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

5-1

File Number 2156.2

IRFAC40, IRFAC42

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFAC40 IRFAC42 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

DM

GS

600 600 V
600 600 V

6.2

D

3.9

D

5.4

3.4

25 22 A
±20 ±20 V
125 125 W

D

A
A

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 3) (Figures 15, 16) . . . . . . . . . . . . . . . E

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

570 570 mJ

-55 to 150 -55 to 150

o

C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

300

L

260

300
260

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSVGS

GS(TH)VGS

DSS

= 0V, ID = 250µA (Figure 10) 600 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

DSS

, VGS = 0V

- - 250 µA

TJ = 125oC

On-State Drain Current (Note 4) I

D(ON)

VDS> I

D(ON) xrDS(ON) MAX

, VGS = 10V

IRFAC40 6.2 - - µA

IRFAC42 5.4 - - µA
Gate to Source Leakage I
Drain to Source On Resistance (Note 2) r

GSS

DS(ON)VGS

VGS = ±20V - - ±100 nA

= 10V, ID = 3.4A (Figures 8, 9)

IRFAC40 - 0.97 1.2 Ω

IRFAC42 - 1.2 1.6 Ω
Forward Transconductance (Note 4) g
Turn-On Delay Time t

d(ON)

VDS≥ 50V, ID = 3.4A (Figure 12) 4.7 70 - S

fs

VDD= 0.5V x Rated BV

, ID≈ 6.2A, RG =

DSS

-1320ns

9.1Ω, RL = 47Ω, VGS= 10V (Figures 17, 18)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

MOSFET Switching Times are Essentially

r

Independent of Operating Temperature

f

= 10V, ID = 6.2A, V

BV

, I

DSS

G(REF)

DSS

= 1.5mA (Figures 14, 19, 20)

= 0.8 x Rated

-1827ns

-5583ns

-2030ns

-4060nC

Gate Charge is Essentially Independent of

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

Operating Temperature

gs

gd

- 5.5 - nC

-20-nC

5-2

IRFAC40, IRFAC42

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

ISS

OSS

RSS

D

S

θJC

θJA

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1300 - pF

160 pF

30 pF

Measured Between
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die

Measured From The

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

-13-nH
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad

- - 1.0
Free Air Operation - - 30

o

o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25Ω, peak IAS = 6.8A. See Figures 15, 16.

Modified MOSFET

SD

Symbol Showing the
Integral Reverse

D

- - 6.2 A

- - 25 A

P-N Junction Diode

G

S

TJ = 25oC, ISD= 6.2A, VGS = 0V, (Figure 13) - - 1.5 V

SD

TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 200 450 940 ns

rr

TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 1.8 3.8 7.9 µC

RR

5-3

IRFAC40, IRFAC42

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

C/W)

1

o

0.5

0.2

0.1

0.1

0.01

THERMAL IMPEDANCE (

0.001
10

0.05

0.02

0.01

SINGLE PULSE

-5

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

, TRANSIENT

θJC

Z

10

8

6

IRFAC40

4

DRAIN CURRENT (A)

D,

I

2

0

IRFAC42

50 75 10025 150

TC,CASE TEMPERATURE (oC)

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t1/t
PEAK T

-2

10

0.1 1 10

= PDM x Z

J

θJC

2

x R

θJC + TC

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

100

IRFAC40
IRFAC42

10

IRFAC40
IRFAC42

1

, DRAIN CURRENT (A)

D

I

= 25oC

T

C

TJ = MAX RATED
SINGLE PULSE

0.1
110

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS REGION
IS LIMITED BY r

2

10

DS(ON)

10µs

100µs

1ms

10ms

DC

3

10

4

10

10

VGS = 10V

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

VGS = 6.0V

60 120 180 2400 300

V

DS,

V

= 5.5V

GS

80µs PULSE TEST

VGS = 5.0V

VGS = 4.5V

V

= 4.0V

GS

DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

5-4

IRFAC40, IRFAC42

Typical Performance Curves

10

80µs PULSE TEST

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

36912015
V

DRAIN TO SOURCE VOLTAGE (V)

DS,

Unless Otherwise Specified (Continued)

VGS =10V

VGS = 6.0V

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V

VGS = 4.0V

10

V

≥ 100V

DS

80µs PULSE TEST

1

0.1

, DRAIN CURRENT (A)

D

I

0.01

TJ = 150oC

0246810

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

5

80µs PULSE TEST

4

3

2

1

, DRAIN TO SOURCE ON RESISTANCE

0

DS(ON)

r

030

612

ID,DRAIN CURRENT (A)

VGS = 10V

18

VGS = 20V

24

3.0

2.4

1.8

1.2

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0

ID = 3.4A
VGS = 10V

-20-40 20 40 100 140

0 60 120 160

T

, JUNCTION TEMPERATURE (oC)

J

80-60

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs

GATE VOLTAGE AND DRAIN CURRENT

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-20 20 100 160

0-40 40 80 120 140

T

, JUNCTION TEMPERATURE (oC)

J

60-60

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

3000

2400

C

1800

1200

C, CAPACITANCE (pF)

600

0

1 10 100

ISS

C

OSS

C

RSS

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 0V, f = 1MHz
C

= CGS + C

C
C

ISS
RSS

OSS

= C

GD

≈ CDS + C

GD

GD

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

5-5

IRFAC40, IRFAC42

Typical Performance Curves

10

, TRANSCONDUCTANCE (S)

fs

g

≥ 100V

V

DS

80µs PULSE TEST

8

6

4

2

0

2468010

ID,DRAIN CURRENT (A)

Unless Otherwise Specified (Continued)

100

TJ = 25oC

TJ = 150oC

10

1

, SOURCE TO DRAIN CURRENT (A)

SD

I

0.1
0 0.3 0.6 0.9 1.2 1.5

TJ = 150oC

VSD, SOURCE TO DRAIN VOLTAGE (V)

TJ = 25oC

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 6.2A

16

VDS = 120V

12

8

VDS = 240V

V

= 360V

DS

4

GATE TO SOURCE VOLTAGE (V)

GS,

V

0

12 24 36 48060

Q

TOTAL GATE CHARGE (nC)

g(TOT),

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

6-6

IRFAC40, IRFAC42

Test Circuits and Waveforms

V

DS

t

I

AS

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

L

R

G

+

V

DD

-

DUT

0V

P

I

AS

0

t

0.01Ω

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

BV

DSS

P

t

AV

V

DS

V

DD

R

G

V

GS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

t

ON

t

d(ON)

t

V

DS

R

L

DUT

+

V

DD

-

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

GS

D

0

I

G(REF)

0

S

CURRENT

I

D

SAMPLING

DUT

V

DS

G

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

V

DS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

5-7