Datasheet IRF9Z24N Datasheet (International Rectifier)

PD -9.1484B

IRF9Z24N

HEXFET® Power MOSFET

l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated

Description

G

D

R

DS(on)

V

DSS

= -55V

= 0.175Ω

ID = -12A

S

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220

TO-220AB

contribute to its wide acceptance throughout the
industry.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -12
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8.5 A
I

DM

PD @TC = 25°C Power Dissipation 45 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns
T

J

T

STG

Pulsed Drain Current  -48

Linear Derating Factor 0.30 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 96 mJ
Avalanche Current -7.2 A
Repetitive Avalanche Energy 4.5 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

°C

Thermal Resistance

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 3.3
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

Parameter Typ. Max. Units

8/27/97

IRF9Z24N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -55 – – – – – – V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.175 Ω VGS = -10V, ID = -7.2A 
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 2.5 ––– ––– S VDS = -25V, ID = -7.2A

Drain-to-Source Leakage Current

––– ––– -25

––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– –– – 100 V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = -55V, VGS = 0V

µA

= 20V

GS

nA

VGS = -20V
Total Gate Charge ––– ––– 19 ID = -7.2A
Gate-to-Source Charge ––– ––– 5.1 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = -10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 13 –– – VDD = -28V
Rise Time ––– 55 – –– ID = -7.2A
Turn-Off Delay Time ––– 23 – –– RG = 24Ω

ns
Fall Time ––– 37 ––– RD = 3.7Ω, See Fig. 10 
Internal Drain Inductance

Internal Source Inductance ––– –––

4.5

––– –––

7.5

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 350 – –– VGS = 0V
Output Capacitance ––– 170 ––– pF VDS = -25V
Reverse Transfer Capacitance –– – 92 ––– ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V 
Reverse Recovery Time – – – 47 71 ns TJ = 25°C, IF = -7.2A
Reverse RecoveryCharge ––– 84 130 µC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 I

SD

TJ ≤ 175°C

= 25°C, L = 3.7mH

J

= -7.2A. (See Figure 12)

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

-12

-48

showing the

A

p-n junction diode.

≤ -7.2A, di/dt ≤ -280A/µs, V

DD

≤ V

(BR)DSS

D

G

S



,

IRF9Z24N

100

VGS
TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V
BO T T OM - 4. 5V

10

D

-I , Drain-to-Source Current (A)

1

0.1 1 10 100

-V , Drain -to -S o urc e V o ltag e ( V)

DS

20µs PULSE W IDTH
T = 25°C

c

J

-4.5V

Fig 1. Typical Output Characteristics,

100

100

VGS
TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V
BO T T OM - 4. 5V

10

D

-I , Drain-to-Source Current (A)

20µs PULSE W IDTH

-4.5V
T = 175°C

J

A

1

0.1 1 10 100

-V , Drain-to-So urc e V oltag e (V )

DS

C

A

Fig 2. Typical Output Characteristics,

2.0

I = -12A

D

T = 25°C

J

10

D

-I , Dra in -t o -S ou rc e Curren t (A)

1

45678910

-V , G ate -to -Sou rc e V o l ta g e (V)

GS

T = 175°C

J

V = -2 5V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(No rm alized)

0.5

DS(on)

R , Dra in-to -S ourc e On R e sistan c e

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Ju nc tio n T em peratu r e (°C )

J

V = -10V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF9Z24N

700

600

500

400

300

C, C apac itance (pF)

200

100

0

1 10 100

V = 0V, f = 1 MHz

GS

C = C + C , C SHORTED

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C

rs s

V , Drai n-to -Sourc e V olt ag e (V )

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

T = 150°C

J

10

20

I = -7.2A

D

V = -44V

DS

16

12

GS

8

4

V = -28V

DS

-V , Ga te-to-Sourc e V oltage (V)

FOR TEST CIRCUIT

A

0

0 5 10 15 20 25

Q , Tota l Gate Ch arge (nC)

G

SEE FIGURE 13

A

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED
BY R

DS(on)

10µs

T = 25°C

J

1

SD

-I , R eve rse D rain C urrent (A)

0.1

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

-V , Source-to-Drain Voltage (V)

SD

V = 0V

Fig 7. Typical Source-Drain Diode

Forward Voltage

GS

10

D

-I , Dra in C u rren t (A)

T = 25° C

C

T = 175°C

J

A

Single Pulse

1

1 10 100

-V , Drain-to-So urc e V olta ge (V )

DS

100µs

1ms

10ms

A

Fig 8. Maximum Safe Operating Area

IRF9Z24N

+

-

12

9

6

D

3

-I , D rain C urrent (Am ps)

0

25 50 75 100 125 150 175

T , C as e Tem p era t ure (° C)

C

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

R

D.U.T.

D

V

DD

V

DS

V

GS

R

G

-10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

t

d(on)tr

V

GS

A

10%

90%
V

DS

t

d(off)tf

Fig 10b. Switching Time Waveforms

thJC

D = 0.50

1

0.20

0.10

0.05

0.02

0.01

0.1

Therm al Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

S IN G L E P U L S E
(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

J

DM

P

12

thJC

DM

t

1

t

2

C

A

IRF9Z24N

L

D.U.T

I

AS

0.01

t

p

DRIVER

Ω

15V

V

DD

R

-20V

V

DS

G

Fig 12a. Unclamped Inductive Test Circuit

I

AS

t

p

V

(BR)DSS

250

I

D

TOP -2.9A

- 5 .1A

200

A

150

100

50

AS

E , Single Pulse A valanche E nergy (m J)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature (°C)

J

BOT T OM -7.2A

A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Q

G

-10V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T .

-3mA

I

G

Current Sampling Resistors

I

­V

DS

+

D

Fig 13b. Gate Charge Test Circuit

IRF9Z24N

+

-

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

-

+



-



-

+



R

G

V

GS

• dv/dt controlled by R

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

V

DD

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

Period

[ ] ***

VGS=10V

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

Current

D.U.T. VDSWaveform

Inductor Curent

Ripple ≤ 5%

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Diode Recovery

Body Diode Forward Drop

Fig 14. For P-Channel HEXFETS

di/dt

dv/dt

[ ]

V

DD

[ ]

I

SD

IRF9Z24N

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

1 0.54 (.41 5)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:
1 DIM E N S IO NIN G & TO L ER AN C ING P E R A NS I Y1 4 .5 M , 198 2. 3 OU T L IN E C O N F O R M S T O J E D E C OU T LIN E TO -2 20 A B .
2 CONTR OLLING D IMENSION : INCH 4 HEATSINK & LEAD MEASURE MENTS DO NO T INCL UDE BURRS .

2X

1 0.29 (.40 5)

4

1 2 3

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IRF1010

EXAMPLE : THIS IS AN IRF1010

W ITH ASSEMBLY

W ITH ASSEMBLY

LOT COD E 9 B 1 M

LOT COD E 9 B 1 M

3.78 (.149)

3.54 (.139)

- A -

6.4 7 (.255)

6.1 0 (.240)

1.15 (.045)
MIN

4.0 6 (.160)

3.5 5 (.140)

0.93 (.037)

3X

0.69 (.027)

0 .3 6 (.01 4) M B A M

INTERNATIONAL

INTERNATIONAL

R ECT IF IER

R ECT IF IER

LOGO

LOGO

ASSEMBLY

ASSEMBLY

LOT COD E

LOT COD E

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

IRF1010

IRF1010

9246

9B 1M

9B 1M

LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - SOURCE
4 - D R A IN

0.5 5 (.022)

3X

0.4 6 (.018)

2.92 (.115)

2.64 (.104)

9246

PART NUMBER

PART NUMBER

DATE CODE

DATE CODE

(YYWW)

(YYWW)

YY = YEAR

YY = YEAR

WW = WEEK

WW = WEEK

A

A

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97