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PD - 9.1560A
PRELIMINARY
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
IRF9953
HEXFET® Power MOSFET
1
S1
2
G1
3
S2
4
G2
Top View
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
8
D1
V
= -30V
R
DS(on)
DSS
= 0.25Ω
7
D1
6
D2
5
D2
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Pulsed Drain Current I
Continuous Source Current (Diode Conduction) I
Maximum Power Dissipation
Single Pulse Avalanche Energy E
Avalanche Current I
Repetitive Avalanche Energy E
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range T
dv/dt -5.0 V/ ns
TA = 25°C -2.3
TA = 70°C -1.8
TA = 25°C 2.0
TA = 70°C 1.3
J, TSTG
DS
GS
I
D
DM
S
P
D
AS
AR
AR
-30
± 20
-10
1.6
57 mJ
-1.3 A
0.20 mJ
-55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient R
θJA
62.5
V
A
W
°C/W
8/25/97
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IRF9953
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 0.165 0.250 V
––– 0.290 0.400 V
Ω
= 10V, ID = -1.0A
GS
= 4.5V, ID = -0.50A
GS
Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance ––– -2.4 ––– S VDS = -15V, ID = -2.3A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 20V
––– ––– -2.0 V
––– ––– -25 VDS = 24V, VGS = 0V, TJ = 55°C
µA
nA
= 24V, VGS = 0V
DS
= -20V
GS
Total Gate Charge ––– 6.1 1 2 ID = -2.3A
Gate-to-Source Charge ––– 1.7 3.4 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 1.1 2. 2 VGS = -10V, See Fig. 10
Turn-On Delay Time ––– 9.7 19 VDD = -10V
Rise Time ––– 14 28 ID = -1.0A
Turn-Off Delay Time ––– 20 40 RG = 6.0Ω
ns
Fall Time ––– 6.9 14 RD = 10Ω
Input Capacitance ––– 190 – –– VGS = 0V
Output Capacitance ––– 120 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Surface mounted on FR-4 board, t ≤ 10sec.
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
––– ––– 16
Diode Forward Voltage ––– 0.82 1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V
Reverse Recovery Time ––– 27 54 ns TJ = 25°C, IF = -1.25A
Reverse RecoveryCharge ––– 31 62 nC di/dt = -100A/µs
I
SD
TJ ≤ 150°C
= 25°C, L = 67mH
J
= -1.3A.
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
1.3
A
≤ -1.3A, di/dt ≤ -92A/µs, V
DD
≤ V
(BR)DSS
D
G
S
,
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IRF9953
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
10
1
-3.0V
D
-I , Drain-to-So urce C urrent (A)
20µs PULSE WIDT H
T = 25 °C
0.1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
10
1
-3.0V
D
-I , D r ain - to -S ou rce C u rr e nt ( A )
20µs PULSE WIDT H
T = 150°C
A
0.1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
A
Fig 2. Typical Output Characteristics
100
10
T = 25°C
J
T = 150°C
J
1
D
-I , Dra in-to - Sou r c e C urren t (A )
0.1
3.0 4.0 5.0 6.0 7.0 8.0
-V , G ate-to - S ou rc e V o l ta g e (V)
GS
V = -10V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
10
T = 150°C
J
T = 25°C
J
1
SD
-I , Re verse D rain C urrent (A)
V = 0V
A
0.1
0.4 0.6 0.8 1.0 1.2 1.4
-V , So urc e- to-Drain V olt ag e (V)
SD
GS
A
Fig 4. Typical Source-Drain Diode
Forward Voltage
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IRF9953
2.0
1.5
1.0
I =
D
-1.0A
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 5. Normalized On-Resistance
Vs. Temperature
0.80
0.60
V =
GS
°
-10V
2.5
2.0
1.5
1.0
, Drain-to-Source On Resistance ( Ω )
0.5
DS(on)
R
0.0
0.0 1.0 2.0 3.0 4.0 5.0
-I , D rain C urrent (A)
D
V = -4.5 V
GS
V = -10V
GS
Fig 6. Typical On-Resistance Vs. Drain
Current
150
TOP
120
BOTTOM
I
D
-0.58A
-1.0A
-1.3A
A
0.40
0.20
I = -2. 3A
D
, Drain-to-Source On Resistance ( Ω )
DS(on)
R
0.00
03691215
-V , Gate-to-Source Voltage (V)
GS
Fig 7. Typical On-Resistance Vs. Gate
Voltage
90
60
30
AS
E , Single Pulse Avalanche Energy (mJ)
A
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
°
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Page 5
IRF9953
400
300
200
C , Capac itance (pF)
100
0
1 10 100
V = 0V, f = 1 MHz
GS
C = C + C , C S HORTE D
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rs s
-V , Drain -to-So urc e V oltag e (V)
DS
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =D-2.3A
16
12
8
4
GS
-V , Gate-to-Source Voltage (V)
A
0
0 2 4 6 8 10
Q , Total Gate Charge (nC)
G
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
V =-10V
DS
0.50
thJA
0.20
10
0.10
0.05
0.02
1
0.01
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Page 6
IRF9953
Package Outline
SO8 Outline
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS A RE S HO W N IN M ILLIMETER S (INCHES).
4. OUTLIN E CONFORM S TO JEDEC OUTLINE MS-012AA.
5
DIMENSI ON DOES NOT INCLUDE MOLD PROTRUSIONS
MO LD PR O TRU SIONS NO T TO EXCEE D 0.25 (.006).
DIM ENSIO NS IS TH E LENGT H OF LE AD FOR SOLDERING TO A SU BSTRAT E..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
K x 45°
θ
θ
6
L
8X
INC H E S M IL L IM ET E R S
DIM
M IN M A X M IN M AX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
C
8X
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8° 0 ° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking Information
SO8
EXAMPLE : THIS IS AN IRF7101
312
INTERNATIONAL
R E CTIFIER
L OG O
F7 101
TOP
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
W A FE R
PART NUMBER
LOT C OD E
(LAST 4 DIGITS)
XXXX
BOTTOM
Page 7
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERM INAL NU M BER 1
12.3 ( .484 )
11.7 ( .461 )
IRF9953
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CO NTROLLING DIMENSION : MILL IM ETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-4 81 & EIA-541.
330.00
(12.992)
MAX.
NOT ES :
1. CO NTRO LLING DIME NS ION : MILLIMETER.
2. OUTLIN E CONFORM S TO EIA-481 & EIA-541.
FEED DIRECTIO N
14.4 0 ( .566 )
12.4 0 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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