Datasheet IRF9540, RF1S9540SM Datasheet (Intersil)

IRF9540, RF1S9540SM

Data Sheet July 1999

19A, 100V, 0.200 Ohm, P-Channel Power
MOSFETs

These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.

Formerly Developmental Type TA17521.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF9540 TO-220AB IRF9540
RF1S9540SM TO-263AB RF1S9540

NOTE: When ordering,usetheentire part number.Addthe suffix9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.

File Number

Features

• 19A, 100V

DS(ON)

= 0.200Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2282.6

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

4-15

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9540, RF1S9540SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9540,

RF1S9540SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DM

GS

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D
D

D

-100 V

-100 V

-19

-12

-76 A
±20 V
150 W

A
A

Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

960 mJ

-55 to 175

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

g(TOT)VGS

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= -250µA, VGS = 0V (Figure 10) -100 - - V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS > I

D(ON)

, VGS = 0V - - -25 µA

DSS

, VGS = 0V, TC = 125oC - - -250 µA

DSS

x r

DS(ON) MAX

, VGS = -10V -19 - - A

VGS = ±20V - - ±100 nA

= -10A, VGS = -10V (Figures 8, 9) - 0.150 0.200 Ω

VDS > I

D(ON)

x r

DS(ON) MAX

, ID = -6A

57-S

(Figure 12)
VDD = -50V, ID≈19A, RG = 9.1Ω, RL = 2.3Ω,

VGS = -10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1620ns

- 65 100 ns

-4770ns

-2870ns

= -10V, ID = -19A, VDS = 0.8 x Rated BV
I

= -1.5mA (Figures 14, 19, 20)

g(REF)

Gate Charge is Essentially Independent of
Operating Temperature

VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)

DSS

,

-7090nC

-14-nC

-56-nC

- 1100 - pF

- 550 - pF

- 250 - pF

Measured From the
Contact Screw on Tab to
the Center of Die

Measured From the Drain
Lead, 6mm (0.25in) from
Package to the Center of
Die

Measured From the
Source Lead, 6mm
(0.25in) From Package to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

--1oC/W

Typical Socket Mount - - 62.5oC/W

4-16

IRF9540, RF1S9540SM

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 25V, starting TJ= 25oC, L = 4mH, RG= 25Ω, peak IAS= 19A. (Figures 15, 16).

Modified MOSFET Symbol
Showing the Integral Re­verse

D

- - -19 A

- - -76 A

P-N Junction Diode

G

S

TC = 25oC, ISD = -19A, VGS = 0V (Figure 13) - - -1.5 V

SD

TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs - 170 - ns

rr

TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs - 0.8 - µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

C/W)

0.5

o

150

175

-20

-20

-15

-10

, DRAIN CURRENT (A)

D

I

-5

0

25 75

TC, CASE TEMPERATURE (oC)

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.2

0.1

0.1

, TRANSIENT
Z

θJC

THERMAL IMPEDANCE (

0.01
10

0.05

0.02

0.01

-5

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-17

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x R

-1

P

DM

t

1

t

2

1/t2

+ T

θJC

C

1

10

IRF9540, RF1S9540SM

Typical Performance Curves

200
100

10

OPERATION IN THIS

1

, DRAIN CURRENT (A)

D

I

0.1

AREA IS LIMITED
BY r

T

= 25oC

C

T

= MAX RATED

J

SINGLE PULSE

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

101

Unless Otherwise Specified (Continued)

-100

-80

-60

-40

, DRAIN CURRENT (A)

D

I

-20

0

0 -10 -20 -30 -40

100

10µs

100µs
1ms

10ms
100ms

DC

500

VGS= -16V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS= -5V

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

-50

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

-40

-30

-20

, DRAIN CURRENT (A)

D

I

-10

0

0-2-4-6-8

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

VGS = -16V

VGS = -14V

VGS = -10V
VGS = -9V

VGS = -8V

VGS = -7V

VGS = -6V

VGS = -5V

VGS = -4V

VGS = -12V

-10

-100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

-10

-1

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

-0.1
0

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 125oC

TJ = 25oC

TJ = -55oC

-4 -6 -8 -10-2

VGS= -14V

VGS= -12V

VGS= -10V

VGS= -9V
VGS= -8V

VGS= -7V
VGS= -6V

VGS= -4V

-50

-12 -14

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

0.26

0.22

0.18

0.14

RESISTANCE (Ω)

, DRAIN TO SOURCE ON

0.10

DS(ON)

r

0 -20 -40 -60 -80 -100

I

, DRAIN CURRENT (A)

D

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = -10V

VGS = -20V

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4-18

2.0
VGS = -10V, ID = 10A
PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0.2

-40 0 40 80 120 160
T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 9. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRF9540, RF1S9540SM

Typical Performance Curves

1.15

ID = 250µA

1.05

0.95

0.85

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.75

-40 0 40 80 120 160
T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

FIGURE 10. NORMALIZED DRAIN TOSOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

12

9

TJ = -55oC

TJ = 25oC

2000

VGS= 0V, f = 1MHz
C

= CGS + C

1600

1200

800

C, CAPACITANCE (pF)

400

0

0

C

ISS

C

OSS

C

RSS

-10
V

DS

-20

, DRAIN TO SOURCE VOLTAGE (V)

-30 -40

C
C

ISS
RSS
OSS

= C

≈ CDS+ C

GD

GD

GD

-50

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

TJ = 150oC

10

TJ = 25oC

6

, TRANSCONDUCTANCE (S)

3

fs

g

0

0

-20 -40

TJ = 125oC

I

, DRAIN CURRENT (A)

D

-60 -80 -100

1

, SOURCE TO DRAIN CURRENT (A)

SD

I

0.1

0.4
V

SD

0.8 1.4

1.0 1.2 1.6 1.80.6

, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

0

- 5

, GATE TO SOURCE (V)

-10

GS

V

020406080

VDS = -20V

= -50V

V

DS

= -80V

V

DS

, GATE CHARGE (nC)

Q

g(TOT)

ID = -19A

4-19

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

IRF9540, RF1S9540SM

Test Circuits and Waveforms

V

DS

VARY t

TO OBTAIN

P

REQUIRED PEAK I

0V
V

GS

t

P

AS

L

R

G

-

V

DD

+

DUT

I

AS

0.01Ω

0

V

DD

I

AS

t

P

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

BV

t

AV

DSS

V

DS

t

ON

t

d(ON)

t

R

L

DUT

R

V

GS

G

-

V

DD

+

0

V

DS

V

GS

0

r

10%

90%

10%

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

-V

DS

D

(ISOLATED
SUPPLY)

DUT

0

V

DS

Q

gs

Q

gd

12V

BATTERY

0.2µF

50kΩ

CURRENT

REGULATOR

0.3µF

t

d(OFF)

V

GS

t

OFF

50%

90%

90%

t

f

10%

G

0

I

g(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

4-20

S

CURRENT

I

D

SAMPLING

DUT

+V

DS

Q

g(TOT)

V

DD

0

I

g(REF)

FIGURE 20. GATE CHARGE WAVEFORMS

IRF9540, RF1S9540SM

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