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PD - 91482C
IRF9530N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
D
V
R
DS(on)
= -100V
DSS
= 0.20Ω
ID = -14A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -14
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -10 A
I
DM
PD @TC = 25°C Power Dissipation 79 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -56
Linear Derating Factor 0.53 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 250 mJ
Avalanche Current -8.4 A
Repetitive Avalanche Energy 7.9 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.9
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Typ. Max. Units
5/13/98
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IRF9530N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = -10V, ID = -8.4A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 3.2 ––– ––– S VDS = -50V, ID = -8.4A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– – –– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– – – – 58 ID = -8.4A
Gate-to-Source Charge ––– ––– 8.3 nC VDS = -80V
Gate-to-Drain ("Miller") Charge ––– ––– 32 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 15 ––– VDD = -50V
Rise Time ––– 58 ––– ID = -8.4A
Turn-Off Delay Time ––– 45 ––– RG = 9.1Ω
ns
Fall Time ––– 46 ––– RD = 6.2Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 760 ––– VGS = 0V
Output Capacitance ––– 260 –– – pF VDS = -25V
Reverse Transfer Capacitance –– – 170 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -8.4A, VGS = 0V
Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = -8.4A
Reverse RecoveryCharge ––– 650 970 nC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= 25°C, L = 7.0mH
J
= -8.4A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
-14
-56
showing the
A
p-n junction diode.
≤ -8.4A, di/dt ≤ -490A/µs, V
DD
≤ V
(BR)DSS
D
G
S
,
Page 3
IRF9530N
A
A
)
A
100
VGS
TO P - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
BOT TO M - 4.5V
10
1
D
-I , Dra in-to-Sou rc e C u rre nt (A )
-4.5 V
20µs PULSE WIDTH
T = 2 5°C
0.1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
100
c
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
1
D
-I , Drain -to-S ou rce C urre nt (A )
20µs PULSE WIDTH
T = 175°C
0.1
0.1 1 10 100
-V , Dra in-t o-So u rc e V o ltage (V
DS
C
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
-14A
T = 25°C
10
1
D
-I , Drain-to-Source Current (A)
0.1
45678910
J
T = 175°C
J
V = -50 V
DS
20µs PULSE W IDTH
-V , Ga te-to- So urc e V o ltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
-10V
Page 4
IRF9530N
A
)
A
2000
1600
1200
800
C, Capacitance (pF)
400
0
1 10 100
V = 0V, f = 1M Hz
GS
C = C + C , C S H O RTE D
iss gs gd ds
C = C
rss gd
C = C + C
oss ds g d
C
iss
C
oss
C
rss
-V , Drai n-to - S o ur c e V o ltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
-8.4A
D
15
10
5
V =-80V
DS
V =-50V
DS
V = -20V
DS
GS
-V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 10 20 30 40 50 60
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
T = 150°C
J
T = 25°C
J
1
V = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
-V , Source-to-Drain Voltage (V)
SD
-I , Reverse Drain Current (A)
10
SD
0.1
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10us
100us
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100 1000
°
J
-V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
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IRF9530N
14
12
10
8
6
D
4
-I , Drain Current (A)
2
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
D.U.T.
D
-
+
V
DS
V
GS
R
G
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
thJC
D = 0.50
1
0.20
0.10
1 2
P
DM
t
1
t
2
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRF9530N
(BR)
L
D.U.T
I
AS
0.01
t
p
DRIVER
Ω
15V
V
DD
R
G
-20V
V
DS
Fig 12a. Unclamped Inductive Test Circuit
I
AS
t
p
V
DSS
700
600
TOP
BOTTOM
A
500
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
I
D
-3.4A
-5.9A
-8.4A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Q
G
-10V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
I
V
DS
+
D
Fig 13b. Gate Charge Test Circuit
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IRF9530N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Diode Recovery
Body Diode Forward Drop
di/dt
dv/dt
Fig 14. For P-Channel HEXFETS
V
DD
[ ]
I
[ ]
SD
Page 8
IRF9530N
A
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO NIN G & T O L E R A N C ING P E R A N S I Y1 4 . 5 M , 1 9 82 . 3 OU T L IN E C ON F O R M S T O JE DE C OU T L IN E T O -2 2 0 A B .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
10.29 (.405)
4
1 2 3
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
EXAMPLE : THIS IS AN IRF1010
W ITH ASS EMB LY
W ITH ASS EMB LY
LOT COD E 9 B1 M
LOT COD E 9 B1 M
3.78 (.149)
3.54 (.139)
- A -
6.47 (.255)
6.10 (.240)
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
0.93 (.037)
3X
0.69 (.027)
0.36 (.01 4) M B A M
INTERN A TION A L
INTERN A TION A L
RE CTIFIER
RE CTIFIER
L OGO
L OGO
ASSEMBLY
ASSEMBLY
LOT C OD E
LOT C OD E
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
I RF1010
I RF1010
9246
9B 1M
9B 1M
LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOU RC E
4 - DRA IN
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
9246
PART NUMB ER
PART NUMB ER
DATE CODE
DATE CODE
(YYWW)
(YYWW)
YY = YEAR
YY = YEAR
WW = WEEK
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
Page 9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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