Datasheet IRF9530 Datasheet (Intersil)

IRF9530, RF1S9530SM

Data Sheet July 1999

12A, 100V, 0.300 Ohm, P-Channel Power
MOSFETs

These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gatedrivepower.Thehighinput impedance allows these
types to be operated directly from integrated circuits.

Formerly developmental type TA17511.

Ordering Information

P AR T NUMBER P ACKAGE BRAND

IRF9530 TO-220AB IRF9530
RF1S9530SM TO-263AB RF1S9530

NOTE: When ordering,use the entire part number.Addthe suffix 9Ato
obtain the TO-263ABvariant in the tape and reel, i.e., RF1S9530SM9A.

File Number

Features

• 12A, 100V

DS(ON)

= 0.300Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2221.4

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-263A

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

4-9

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9530, RF1S9530SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9530,

RF1S9530SM UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

D
D

DM

GS

-100 V

-100 V

-12

-7.5

-48 A

±20 V

A
A

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 75 W

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

500 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to TJ = 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

DSSID

GS(TH)VGS

DSS

D(ON)

= -250µA, VGS = 0V, (Figure 10) -100 - - V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS= 0.8 x Rated BV
VDS > I

D(ON)

, VGS = 0V - - -25 µA

DSS

= 0V, TC= 125oC - - -250 µA

, VGS = -10V,

-12 - - A

x r

DS(ON)MAX

DSS,VGS

(Figure 7)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain (“Miller”) Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

d(off)

OSS
RSS

VGS = ±20V - - ±100 nA

= -6.5A, VGS = -10V, (Figures 8, 9) - 0.250 0.300 Ω

VDS > I

fs

(Figure 12)
VDD = 50V, ID≈ -12A, RG = 50Ω, VGS= 10V

RL = 4.2Ω, (Figures 17, 18)

r

MOSFET Switching Times are Essentially Inde­pendent of Operating Temperature

f

x r

D(ON)

DS(ON)

=-10V,ID=-12A,V

Max, ID = -6.5A

=0.8x Rated BV

DSS

DSS,

2 3.8 - S

-3060 ns

- 70 140 ns

- 70 140 ns

- 70 140 ns

-2545nC
(Figure 14, 19, 20) Gate Charge
is Essentially Independent of Operating

gs

Temperature

gd

VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) - 500 - pF

ISS

-13 - nC

-12 - nC

- 300 - pF

- 100 - pF
Measured From the

D

ContactScrew On Tab To
Center of Die

Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Measured From The

S

Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

θJC

Typical Socket Mount - - 62.5

θJA

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 1.67

o
o

C/W
C/W

4-10

IRF9530, RF1S9530SM

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 2)

Source to Drain Diode Voltage (Note 2) V

SD

Reverse Recovery Time t
Reverse Recovery Charge Q

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 25V, starting TJ= 25oC, L = 5.2mH, RG= 25Ω, peak IAS = 12A. See Figures 15, 16.

Modified MOSFET
Symbol Showing the In­tegral Reverse

D

- - -12 A

- - -48 A

P-N Junction Diode

G

S

TJ = 25oC, ISD = -12A, VGS = 0V,

- - -1.5 V

(Figure 13)
TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs - 300 - ns

rr

TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs - 1.8 - µC

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.5

-12.0

-9.6

-7.2

-4.8

, DRAIN CURRENT (A)

D

I

-2.4

0

25 50

75 125

TC, CASE TEMPERATURE (oC)

100

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

150

0.2

0.1

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

0.05

0.02

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-11

P

DM

t

1

t

t

2

θJC

1/t2

+ R

2

θJA

+T

C

10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

1

IRF9530, RF1S9530SM

Typical Performance Curves

-100

-10

OPERATION IN THIS

-1

, DRAIN CURRENT (A)

D

I

TC = 25oC

T

= MAX RATED

J

SINGLE PULSE

-0.1

AREA MAY BE
LIMITED BY r

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

-10-1

Unless Otherwise Specified (Continued)

10µs
100µs

1ms

10ms
100ms
DC

-100

-1000

-20

-16

-12

-8

, DRAIN CURRENT (A)

D

I

-4

0 -10 -20 -30 -40

VGS = -10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

-10

VGS = -8V

-8
VGS = -9V

VGS = -10V

-6

-4

, DRAIN CURRENT (A)

D

I

-2

0

0

-2
VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -7V

VGS = -6V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = -5V

VGS = -4V

-4 -6 -10

-8

-20
VDS≥ I

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-16

-12

-8

-4

, ON-STATE DRAIN CURRENT (A)

D(ON)

I

0

0

x r

D(ON)

VGS, GATE TO SOURCE VOLTAGE (V)

DS(ON)

-55oC
25oC

125oC

-4 -6 -8 -10-2

VGS = -9V

VGS = -8V

VGS = -7V
VGS = -6V

VGS = -5V
VGS = -4V

-50

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

1.0

2µs PULSE TEST

0.8

0.6

0.4

DRAIN TO SOURCE

ON RESISTANCE (Ω)

0.2

DS(ON)

r

0

0

VGS= -10V

-10

-20

ID, DRAIN CURRENT (A)

VGS= -20V

-30 -40

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4-12

-50

2.2
VGS = -10V, ID = -6.5A

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.8

1.4

1.0

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0.2

-40 0 40
T

, JUNCTION TEMPERATURE (oC)

J

80

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

120

IRF9530, RF1S9530SM

Typical Performance Curves

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-40 0 40 80
T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

120 160

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

5

4

3

TJ = -55oC

TJ = 25oC

TJ = 125oC

1000

800

600

400

C, CAPACITANCE (pF)

200

0

0

C

ISS

C

OSS

C

RSS

V

-10

DS

-20

, DRAIN TO SOURCE VOLTAGE (V)

VGS= 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

C

≈ CDS+ C

OSS

-30 -40

GD

GD

GD

-50

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

-100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-10

TJ = 150oC

2

, TRANSCONDUCTANCE (S)

1

fs

g

0

0 -4 -8 -12 -16

ID, DRAIN CURRENT (A)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

-20

-1.0

, DRAIN CURRENT (A)

SD

I

-0.1

-0.4

TJ = 25oC

-0.8 -1.4

-1.0 -1.2 -1.6 -1.8-0.6

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

0

- 5

- 10

, GATE TO SOURCE (V)

GS

V

- 15

0 8 16 24 40

V

= -20V

DS

VDS = -50V

, TOTAL GATE CHARGE (nC)

Q

g(TOT)

VDS = -80V

ID = -12A

42

4-13

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

IRF9530, RF1S9530SM

Test Circuits and Waveforms

V

DS

VARY t

TO OBTAIN

P

REQUIRED PEAK I

0V
V

GS

t

P

AS

L

R

G

-

V

DD

+

DUT

I

AS

0.01Ω

0

V

DD

I

AS

t

P

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

BV

t

AV

DSS

V

DS

DUT

R

V

GS

G

FIGURE 17. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

t

ON

t

d(ON)

t

R

L

-

V

DD

+

0

V

DS

V

GS

0

10%

r

10%

90%

50%

t

d(OFF)

t

OFF

50%

90%

t

f

10%

PULSE WIDTH

90%

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

-V

DS

(ISOLATED
SUPPLY)

DUT

D

0

V

DS

Q

gs

Q

gd

V

GS

G

0

I

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

4-14

S

CURRENT

I

D

SAMPLING

DUT

+V

DS

Q

g(TOT)

V

DD

0

I

G(REF)

FIGURE 20. GATE CHARGE WAVEFORMS

IRF9530, RF1S9530SM

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