Datasheet IRF9520NSPBF Specification

PD -91522A

IRF9520NS/L

HEXFET® Power MOSFET

l Advanced Process Technology l Surface Mount (IRF9520S) l Low-profile through-hole (IRF9520L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated

G

D

V

R

DS(on)

= -100V

DSS

= 0.48Ω

ID = -6.8A

S

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

2

Pak is a surface mount power package capable of

The D accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D

2

Pak is suitable

2

D Pak

TO-262

for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9520L) is available for lowprofile applications.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -6.8 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -4.8 A I

DM

PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 48 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns T

J

T

STG

Pulsed Drain Current  -27

Linear Derating Factor 0.32 W/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy 140 mJ Avalanche Current -4.0 A Repetitive Avalanche Energy 4.8 mJ

Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 3.1 Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40

°C/W

°C

5/13/98

IRF9520NS/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.10 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.48 Ω VGS = 10V, ID = -4.0A  Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA Forward Transconductance 1.4 ––– ––– S VDS = -50V, ID = -4.0A

Drain-to-Source Leakage Current

––– ––– -25

––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100

VDS = -100V, VGS = 0V

µA

nA

VGS = -20V Total Gate Charge ––– ––– 27 ID = -4.0A Gate-to-Source Charge ––– ––– 5.0 nC VDS = -80V Gate-to-Drain ("Miller") Charge ––– ––– 15 VGS = -10V, See Fig. 6 and 13  Turn-On Delay Time ––– 14 ––– VDD = -50V Rise Time ––– 47 ––– ID = -4.0A Turn-Off Delay Time ––– 28 –– – RG = 22Ω

ns

Fall Time ––– 31 ––– RD = 12Ω, See Fig. 10  Internal Source Inductance

––– –––

7.5

Between lead,

nH

and center of die contact Input Capacitance ––– 350 ––– VGS = 0V Output Capacitance ––– 1 10 ––– pF VDS = -25V Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

-6.8

-27

showing the

A

p-n junction diode. Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -4.0A, VGS = 0V  Reverse Recovery Time ––– 100 150 n s TJ = 25°C, IF = -4.0A Reverse Recovery Charge ___ 420 630 nC di/dt = -100A/µs Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%

= 25°C, L = 18mH

J

= -4.0A. (See Figure 12)

AS

≤ -4.0A, di/dt ≤ -300A/µs, V

DD

≤ V

(BR)DSS

 Uses IRF9520N data and test conditions

,

D

G

S



IRF9520NS/L

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM

-4.5V

20µs PULSE WIDTH T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics,

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM

-4.5V

20µs PULSE WIDTH T = 175 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics,

2.5

I =

D

-6.7A

°

T = 175 C

J

10

T = 25 C

J

1

D

-I , Drain-to-Source Current (A)

V = 10V

DS

0.1 4 5 6 7 8 9 10

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.0

°

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

V =

GS

°

-10V

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF9520NS/L

gsg

800

600

400

C, Capacitance (pF)

200

0

1 10 100

V

=

0V,

GS

C

=

iss

C

=

rssgd

C

=

oss dsgd

C

iss

C

oss

C

rss

-V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C

C SHORTED C C

d , ds

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

°

T = 175 C

J

10

20

I =

-4.0 A

GS

D

16

12

8

4

V =-80V

DS

V =-50V

DS

V =-20V

DS

-V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

0

0 5 10 15 20 25

Q , Total Gate Charge (nC)

G

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

10

BY R

DS(on)

10us

100us

13

°

T = 25 C

J

1

SD

-I , Reverse Drain Current (A)

V = 0 V

0.1

0.2 0.8 1.4 2.0 2.6

-V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

1

D

-I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 175 C Single Pulse

0.1 1 10 100 1000

°

J

-V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

1ms

10ms

Forward Voltage

8.0

6.0

4.0

D

-I , Drain Current (A)

2.0

0.0 25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

IRF9520NS/L

R

D.U.T.

D

t

d(off)tf

-

+

V

DS

V

GS

R

G

-10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

t

d(on)tr

V

GS

10%

90% V

DS

V

DD

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

Case Temperature

10

D = 0.50

thJC

1

0.20

0.10

0.05 P

1 2

DM

t

1

t

2

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

0.01

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF9520NS/L

(BR)

L

D.U.T

I

AS

0.01

p

DRIVER

Ω

15V

V

DD

R

-20V

V

DS

G

t

Fig 12a. Unclamped Inductive Test Circuit

I

AS

t

p

V

DSS

400

TOP

I

D

-1.7A

-2.8A

A

300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

-4.0A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Q

G

-10V

Q

GS

V

G

Q

GD

Charge

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T .

-3mA

I

G

Current Sampling Resistors

I

V

DS

+

D

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

IRF9520NS/L

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



-



R

G

V

GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-



-

• dv/dt controlled by R

• ISD controlled by Duty Factor "D"

+

G

• D.U.T. - Device Under Test

P.W.

D =

Period

+

V

DD

-

VGS=10V

[ ] ***

Reverse Recovery Current

Re-Applied Voltage

D.U.T. ISDWaveform

Body Diode Forward

Current

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Diode Recovery

di/dt

dv/dt

Fig 14. For P-Channel HEXFETS

V

[ ]

DD

I

[ ]

SD

IRF9520NS/L

A

D2Pak Package Outline

10.54 (.415)

1.40 (.055) MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M , 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A 2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.2 5 ( .0 10 ) M B A M

Part Marking Information

D2Pak

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS 1 - G ATE 2 - D RA IN 3 - S OURCE

10.16 (.400) REF .

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350) REF .

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082) 2X

2.54 (.100) 2X

INTERNATIONAL RE CTIFIE R LO G O

A S SEMBLY LO T CO D E

F530S

9246

9 B 1M

PART NUM B ER

DATE CODE (YYW W) YY = YEAR WW = WEEK

Package Outline

TO-262 Outline

IRF9520NS/L

Part Marking Information

TO-262

IRF9520NS/L

Tape & Reel Information

D2Pak

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

1.65 (.065)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMF O R M S T O EIA-418.

2. CONTR O LLING D IM ENS IO N : MIL LIMET ER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457)

11.40 (.449)

1.75 (.069)

1.25 (.049)

16.10 (.634)

15.90 (.626)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362) MIN .

30.40 (1.197) MAX .

4

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http://www.irf.com/ Data and specifications subject to change without notice. 5/98

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/