Page 1
IRF840/FI
IRF841/FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE V
IRF 840
IRF 840FI
IRF 841
IRF 841FI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
DS(on)
DSS
500 V
500 V
450 V
450 V
= 0.74 Ω
R
DS(on)
I
D
<0.85Ω
<0.85Ω8A4.5 A
<0.85Ω
<0.85Ω8A4.5 A
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Val u e Uni t
IRF
840 841 840FI 841FI
V
V
V
I
DM
V
T
(•) Pulsewidth limited bysafe operating area
May 1993
Drain-source Volt age (VGS= 0) 500 450 500 450 V
DS
Drain- gate Voltage (RGS=20kΩ) 500 450 500 450 V
DGR
Gate - source Voltage ± 20 V
GS
I
Drain Current (cont.) at Tc=25oC884.54.5A
D
I
Drain Current (cont.) at Tc= 100oC 5.1 5.1 2.8 2.8 A
D
(•) Drain Current (pulsed) 32 32 32 32 A
P
Total Dissipation at Tc=25oC 125 40 W
tot
Derat ing Factor 1 0.32 W/
Insu lat ion W ithstand Voltage (DC) 2000
ISO
Storage Temperature -65 to 150
stg
T
Max. Operat in g Junctio n Temperatur e 150
j
o
o
o
C
C
C
1/10
Page 2
IRF840/FI - IRF841/FI
THERMAL DATA
TO-220 ISOWA T T220
R
thj-case
R
thj-amb
R
thc-s
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max 1 3. 12
Thermal Resistance Junction- ambient M ax
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Solder in g Purp os e
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
62.5
0.5
300
8A
510 mJ
13 mJ
5.1 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain - s ource
Break d own Volta ge
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
ID=250µAVGS=0
for IR F840/840 FI
for IR F841/841 FI
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
500
450
250
1000µAµA
VGS= ± 20 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
VGS=10V ID=4.4A 0.74 0.85 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)maxVGS
=10V 8 A
DYNAMIC
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=4.4A 4.9 6 S
VDS=25V f=1MHz VGS= 0 1100
190
80
1500
240
110
V
V
pF
pF
pF
2/10
Page 3
IRF840/FI - IRF841/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Tur n - of f Delay Time
Fall Time
t
f
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SOURCE DRAIN DIODE
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For w ar d On Voltage ISD=8A VGS=0 2 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
Charge
VDD=200V ID=4A
Ri=4.7 Ω
(see test circ uit)
ID=8A VGS=10V
VDD= Max Rating x 0.8
(see test circ uit)
ISD= 8 A di/dt = 100 A/µs
VDD= 100 V Tj= 150oC
40
35
80
20
75
9
39
700
12
50
43
100
25
95 nC
8
32
ns
ns
ns
ns
nC
nC
A
A
ns
µC
Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220
3/10
Page 4
IRF840/FI - IRF841/FI
Thermal Impedance for TO-220
Derating Curve for TO-220
Thermal Impedance for ISOWATT220
Derating Curve for ISOWATT220
Output Characteristics
4/10
Output Characteristics
Page 5
IRF840/FI - IRF841/FI
Transfer Characteristics Transconductance
Static Drain-source On Resistance Maximum Drain Current vs Temperature
Capacitance VariationsGate Charge vs Gate-sourceVoltage
5/10
Page 6
IRF840/FI - IRF841/FI
Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms
6/10
Page 7
IRF840/FI - IRF841/FI
Gate Charge Test CircuitSwitching Time Test Circuit
7/10
Page 8
IRF840/FI - IRF841/FI
TO-220 MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A
L4
D
F2
F1
G1
H2
G
F
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
8/10
Page 9
ISOWATT220 MECHANICAL DATA
IRF840/FI - IRF841/FI
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
Ø
F1
H
L2
F2
F
123
L4
G1
G
P011G
9/10
Page 10
IRF840/FI - IRF841/FI
Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes noresponsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunder anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents inlifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSONMicroelectronics - All Rights Reserved
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Singapore -Spain - Sweden- Switzerland -Taiwan - Thailand - United Kingdom -U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
10/10
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