Datasheet IRF8313PBF Datasheet

PD - 97145

IRF8313PbF

HEXFET® Power MOSFET

Applications

l Load Switch l DC/DC Conversion

Benefits

l Low Gate Charge and Low R l Fully Characterized Avalanche Voltage

DS(on)

and Current

l 20V V l 100% Tested for R l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free)

Max. Gate Rating

GS

G

Description

The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.

V

DSS

30V

S2 1

G2

S1

G1

15.5m:@V

2

3

4

R

DS(on)

6

D28

D27

D1D15

max

= 10V

GS

Qg

6.0nC

SO-8

Absolute Maximum Ratings

V

DS

V

GS

@ TA = 25°C

I

D

I

@ TA = 70°C

D

I

DM

PD @TA = 25°C

@TA = 70°C

P

D

T

J

T

STG

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Continuous Drain Current, V Pulsed Drain Current

Power Dissipation

Linear Derating Factor W/°C Operating Junction and

Storage Temperature Range

c

@ 10V

GS

@ 10V

GS

Max.

30

±20

9.7

8.1

81

2.0

1.3

0.016

-55 to + 175

V

A

W

°C

Thermal Resistance

Parameter Typ. Max. Units

fg

g

––– 42

––– 62.5

°C/W

R

θ

JL

R

θ

JA

Junction-to-Drain Lead

Junction-to-Ambient

Notes  through  are on page 9

ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.

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11/5/08

IRF8313PbF

)

g

)

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

ΔΒV

DSS

R

DS(on

V

GS(th

ΔV

GS(th

I

DSS

I

GSS

gfs Forward Transconductance 23 ––– ––– S

Q

s1

Q

s2

Q

d

Q

odr

Q

sw

Q

oss

R

t

d(on

t

r

t

d(off

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 30 ––– ––– V

/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C

Static Drain-to-Source On-Resistance ––– 12.5 15.5

––– 18.6 21.6

Gate Threshold Voltage 1.35 1.80 2.35 V

VGS = 0V, ID = 250μA

Reference to 25°C, I

V

GS

mΩ

V

GS

V

DS

Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– 1.0

––– ––– 150

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

μA

nA

V

DS

V

DS

V

GS

V

GS

V

DS

Total Gate Charge ––– 6.0 9.0

Pre-Vth Gate-to-Source Charge ––– 1.5 –––

Post-Vth Gate-to-Source Charge ––– 0.9 –––

Gate-to-Drain Charge ––– 2.2 –––

nC

V

DS

VGS = 4.5V

I

D

Gate Charge Overdrive ––– 1.4 ––– See Figs. 17a & 17b

Switch Charge (Q

Output Charge ––– 3.8 ––– nC

+ Q

) ––– 2.9 –––

s2

d

V

DS

Gate Resistance ––– 2.2 3.6 Ω

Turn-On Delay Time ––– 8.3 –––

Rise Time ––– 9.9 –––

Turn-Off Delay Time ––– 8.5 –––

Fall Time ––– 4.2 –––

Input Capacitance ––– 760 –––

Output Capacitance ––– 172 –––

Reverse Transfer Capacitance ––– 87 –––

V

DD

I

D

ns

R

G

See Fig. 15a & 15b

V

GS

pF

V

DS

ƒ = 1.0MHz

= 8.0A

Avalanche Characteristics

Parameter Units

E

AS

I

AR

Single Pulse Avalanche Energy

Avalanche Current

c

d

Typ.

–––

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current ––– –––

(Body Diode)

Pulsed Source Current ––– –––

(Body Diode)

c

82 A

Diode Forward Voltage ––– ––– 1.0 V

Reverse Recovery Time ––– 20 30 ns

Reverse Recovery Charge ––– 10 15 nC

MOSFET symbol

A3.1

showing the

integral reverse

p-n junction diode. TJ = 25°C, IS = 8.0A, VGS = 0V

T

= 25°C, IF = 8.0A, VDD = 15V

J

di/dt = 100A/μs

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2 www.irf.com

Conditions

= 1mA

D

= 10V, ID = 9.7A

= 4.5V, ID = 8.0A

e

= VGS, ID = 25μA

= 24V, VGS = 0V

= 24V, VGS = 0V, TJ = 125°C

= 20V

= -20V

= 15V, ID = 8.0A

= 15V

= 16V, VGS = 0V

= 15V, VGS = 4.5V

= 1.8Ω

= 0V

= 15V

Max.

46

8.0

Conditions

G

e

mJ

A

D

S

e

IRF8313PbF

100

) A

( t

10

n e

r

r u

C e

c

r u

1

o S

o

t

n

i a

r D

0.1

,

D

I

≤60μs PULSE WIDTH

Tj = 25°C

2.3V

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

(

t

10

n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

D

0.01

0.1

TJ = 175°C

1

TJ = 25°C

V

= 15V

DS

≤

60μs PULSE WIDTH

1 2 3 4 5 6

VGS, Gate-to-Source Voltage (V)

TOP 10V

BOTTOM 2.3V

VGS

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

100

) A

( t n e

r

10

u C e

c

r u o S

o

t

n

i

1

a

r D

,

D

I

2.3V

≤60μs PULSE WIDTH

Tj = 175°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 9.8A

V

= 10V

GS

1.5

) d e z

i

l a

m

r o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

TOP 10V

BOTTOM 2.3V

VGS

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

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IRF8313PbF

10000

) F

1000

p

( e

c n a

t

i c a p a

C

100

, C

10

0.1 1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

iss

C

rss

C

oss

Ciss

Coss

Crss

VDS, Drain-to-Source Voltage (V)

SHORTED

ds

gd

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

100

) A

( t n e

r

10

u C n

i a

r D e

s

r e v

1

e R

,

D S

I

0.1

TJ = 175°C

TJ = 25°C

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VSD, Source-to-Drain Voltage (V)

16

) V

( e

g a

t

l o V

e c

r u o S

o

t

e

t a

G ,

V

ID= 8.0A

VDS= 24V

12

8

4

S G

0

02468101214

Qg, Total Gate Charge (nC)

VDS= 15V

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

V

= 0V

GS

TA = 25°C

Tj = 175°C Single Pulse

0.1 0 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

100μsec

1msec

10msec

VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF8313PbF

R

i

R

10

8

) A

( t n e

6

r

r u

C n

i a

r

4

D ,

D

I

2

0

25 50 75 100 125 150 175

TA, Ambient Temperature (°C)

Fig 9. Maximum Drain Current vs.

Ambient Temperature

100

2.5

) V

( e

g a

2.0

t

l o V

d

l o h s e

r

1.5

h T

e

t a

G ,

) h

1.0

t

( S G

V

ID = 25μA

ID = 250μA

0.5

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

D = 0.50

)

A

10

J h

t Z (

e s n o

1

p s e

R l a

m

r e

0.1

h T

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

(sec)

Ri (°C/W)

0.1396039 0.000010

R

6

1

2

3

R

1

τ

J

τ

J

τ

1

τ

1

Ci= τi/R

2

τ

2

τ

2

4

R

3

4

τ

3

τ

4

τ

3

4

7

5

R

6

7

5

τ

6

7

5

τ

6

7

5

0.4048955 0.000030

8

0.5273926 0.000020

R

8

1.2084906 0.001289

τ

a

1.5779475 0.000340

τ

8

7.0394610 0.009747

τ

8

18.0102679 27.798341

33.5929564 0.575346

τι

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

0.01

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF8313PbF

A

)

Ω

38

m

( e

c n

34

a

t s

i s e

30

R n O

26

e c

r u o S

22

o

t

n

i

18

a

r D

,

)

14

n o

(

S D

10

R

2.0 4.0 6.0 8.0 10.0

ID = 9.8A

TJ = 125°C

TJ = 25°C

VGS, Gate-to-Source Voltage (V)

Fig 12. On-Resistance vs. Gate Voltage

15V

200

) J

m

( y

g

r

160

e n E

e h c

120

n a

l a v A

e s

80

l u P

e

l g n

i

40

S

, S A

E

0

25 50 75 100 125 150 175

I

TOP

5.0A

BOTTOM

Starting TJ, Junction Temperature (°C)

Fig 13. Maximum Avalanche Energy

vs. Drain Current

t

p

D

3.0A

8.0A

V

(BR)DSS

R

D

DRIVER

+

V

DD

-

I

AS

Fig 14b. Unclamped Inductive Waveforms

V

DS

L

D.U.T

I

AS

Ω

0.01

t

p

R

V

20V

V

DS

G

GS

Fig 14a. Unclamped Inductive Test Circuit

V

DS

90%

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 15a. Switching Time Test Circuit

D.U.T.

+

V

DD

-

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 15b. Switching Time Waveforms

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IRF8313PbF





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Id

Vds

Vgs

L

VCC

0

1K

20K

Fig 17a. Gate Charge Test Circuit

DUT

Vgs(th)

Qgs1

Qgs2QgdQgodr

Fig 17b. Gate Charge Waveform

www.irf.com 7

IRF8313PbF

]

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

D B

8X b

5

65

4312

e1

CAB

A1

H

0.25 [.010]

A

C

0.10 [.004]

A

E

6

e

6X

0.25 [.010]

87

NOTE S:

1. DIMENS IONING & TOLERANCING PER ASME Y14. 5M-1994.

2. CONTROLL ING DIMENS ION: MIL L IMET E R

3. DIMENS IONS ARE S HOWN IN MILL IME T E R S [INCHES ].

4. OUT LINE CONF ORMS T O JE DEC OUT LINE MS-012AA.

5 DIMENS ION DOES NOT INCLU DE MOLD PR OT RU S IONS . MOL D PR OTR U S IONS NOT T O EXCEE D 0.15 [.006].

6 DIMENS ION DOES NOT INCLU DE MOLD PR OT RU S IONS . MOL D PR OTR U S IONS NOT T O EXCEE D 0.25 [.010].

7 DIMENS ION IS T HE L ENGTH OF LEAD FOR S OLDE RING TO A SUBS TRATE .

y

6.46 [.255]

DIM

MIN MAX

A

.0532

A1

b

c .0075 .0098 0.19 0.25

D

E

e

e1

H

K

L

y

K x 45°

8X L

7

.0688

.0040

.0098

.013

.020

.189

.1968

.1497

.1574

.050 BASIC

.025 BASIC 0.635 BASIC

.2284

.2440

.0099

.0196

.016

.050

0°

8°

8X c

F OOT P R I NT

8X 0.72 [.028]

MIL L IME TE RSINCHES

MIN MAX

1.35

1.75

0.10

0.25

0.33

0.51

4.80

5.00

3.80

4.00

1.27 BASIC

5.80

6.20

0.25

0.50

0.40

1.27

0°

8°

3X 1.27 [.050]

8X 1.78 [.070

SO-8 Part Marking Information

EXAMPLE: T HIS IS AN IRF 7101 (MOSFE T )

INTERNAT IONAL

XXXX

F7101

RECTIFIER

LOGO

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

8 www.irf.com

DAT E CODE (YWW) P = DISGNATES LEAD - FREE

PRODUCT (OPT IONAL) Y = LAST DIGIT OF T H E YE AR WW = WEEK

A = ASSEMBLY SITE CODE LOT CODE

PART NUMBER

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

IRF8313PbF

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CO NFORMS TO EIA- 481 & EIA-541.

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T

= 25°C, L = 1.43mH, RG = 25Ω, I

J

AS

= 8.0A.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.

 R

is measured at T

θ

of approximately 90°C.

J

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com 9

IRF8313PbF

Orderable Part number Package Type

Standard Pack

Note

Form Quantity

IRF8313PbF SO-8 Tube/Bulk 95

IRF8313TRPbF SO-8 Tape and Reel 4000

Qualification Information

Qualification Level

Moisture Sensitivity Level

RoHS Compliant

†

Consumer

(per JEDEC JESD47F

††

†††

guidelines)

SO-8 MSL1

(per JEDEC J-STD-020D

†††

)

Yes

 Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

 Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http//www.irf.com/whoto-call/salesrep/

 Applicable version of JEDEC standard at the time of product release.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.11/08

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