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PD - 94340A
HEXFET
®
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number BV
DSS
IRF7F3704 20V 0.035Ω 12A*
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
RDS(on) ID
IRF7F3704
20V, N-CHANNEL
TO-39
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 12*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 12*
I
DM
PD @ TC = 25°C Max. Power Dissipation 20 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 0.5
T
J
T
STG
* Current is limited by package
For footnotes refer to the last page
Pulsed Drain Current ➀ 48
Linear Derating Factor 0.16 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 190 mJ
Avalanche Current ➀ 12 A
Repetitive Avalanche Energy ➀ 2.0 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 ( 0.063 in./1.6mm from case for 10s)
Weight 0.98 (Typical) g
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A
V/ns
o
C
02/18/01
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IRF7F3704
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
D
l 0.25in. from package) to source
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 — — V VGS = 0V, ID = 250µA
/∆TJTemperature Coefficient of Breakdown — 0.024 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.035 Ω VGS = 10V, ID = 12A
Resistance — — 0.04 VGS = 4.5V, ID = 12A
Gate Threshold Voltage 1.0 — 3.0 V VDS = VGS, ID = 250µA
Forward Transconductance 20 — — S ( )VDS =10V, IDS = 12A ➃
Zero Gate Voltage Drain Current — — 20 V
— — 100 VDS = 16V,
Gate-to-Source Leakage Forward — — 100 VGS =-20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 19 VGS =4.5V, ID = 12A
Gate-to-Source Charge — — 8.0 n C VDS = 10V
Gate-to-Drain (‘Miller’) Charge — — 6.0
Turn-On Delay Time — — 30 VDD = 10V, ID = 12A,
Rise Time — — 175 VGS = 4.5V, RG = 1.8Ω
Turn-Off Delay Time — — 175
Fall Time — — 100
Total Inductance — 7.0 — Measured from drain lead (6mm/
Input Capacitance — 1860 — VGS = 0V, VDS = 10V
Output Capacitance — 990 — pF f = 1.0MHz
Reverse Transfer Capacitance — 55 —
Ω
= 20V ,VGS=0V
µA
nA
ns
nH
DS
VGS = 0V, TJ =125°C
lead (6mm/0.25in. from package)
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 12*
S
I
Pulse Source Current (Body Diode) ➀ —— 48
SM
V
Diode Forward Voltage — — 1.3 V Tj = 25°C, IS = 12A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 57 n s Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
rr
Q
* Current is limited by package
Reverse Recovery Charge — — 60 nC VDD ≤ 16V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 6.25
Junction-to-Ambient — — 175 Typical socket mount
°C/W
+ LD.
S
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IRF7F3704
100
10
, Drain-to-Source Current (A)
D
I
VGS
TOP 10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
3.5V
20µs PULSE WIDTH
1
0.1 1 10 100
Tj = 25°C
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
100
10
, Drain-to-Source Current (A)
D
I
VGS
TOP 10.0V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
3.5V
20µs PULSE WIDTH
Tj = 150°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
12A
I =
D
1.5
°
T = 25 C
J
°
T = 150 C
J
1.0
(Normalized)
D
I , Drain-to-Source Current (A)
15
V = 15V
DS
10
3.5 4.0 4.5 5.0 5.5
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRF7F3704
2800
2400
2000
1600
1200
C, Capacitance (pF)
800
400
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
J
10
I =
12A
D
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30
Q , Total Gate Charge (nC)
G
V = 16V
DS
V = 10V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
13
T = 25 C
10
1
SD
I , Reverse Drain Current (A)
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
°
10
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 150°C
Single Pulse
1
1 10 100
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µs
1ms
10ms
Forward Voltage
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IRF7F3704
R
D.U.T.
D
+
V
DD
-
20
LIMITED BY PACKAGE
16
V
DS
V
GS
R
G
12
8
D
I , Drain Current (A)
4
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
DS
GS
t
V
GS
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
thJC
0.20
1
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1
1 2
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF7F3704
A
15V
DRIVER
+
-
V
DD
R
20V
V
DS
G
V
GS
t
L
.
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
500
TOP
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
5.4A
7.6A
12A
°
Fig 12b. Unclamped Inductive Waveforms
Q
G
4.5V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
+
V
DS
-
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Page 7
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature.
V
= 15 V, Starting TJ = 25°C, L= 2.7mH
DD
Peak IAS =12A, V
= 10V, RG= 25Ω
GS
I
≤ 12A, di/dt ≤ 80A/µs,
SD
VDD ≤ 20V, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — T O-205AF (Modified T O-39)
IRF7F3704
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
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