Datasheet irf7828 Datasheet

HEXFET® Power MOSFET for DC-DC Converters

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

The IRF7828 has been optimized for all parameters that are critical in synchronous buck converters including R

, gate charge and Cdv/dt-induced turn-on immunity.

DS(on)

The IRF7828 offers particulary low R dt immunity for synchronous FET applications.

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application.

and high Cdv/

DS(on)

PD - 94602

IRF7828

1

S

2

S

3

S

4

SO-8

DEVICE CHARACTERISTICS

IRF7828

R

(on)

DS

Q

G

Q

sw

Q

oss

9.5mΩ

9.2nC

3.7nC

6.1nC

Top View

A

8

D

7

D

6

D

5

DG

Absolute Maximum Ratings

Parameter Symbol IRF7828 Units

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain or Source T

Current (V

≥ 4.5V) TL = 70°C 11 A

GS

= 25°C I

A

Pulsed Drain Current I

Power Dissipation T

= 25°C P

A

T

= 70°C 1.6

L

Junction & Storage Temperature Range T

Continuous Source Current (Body Diode) I

Pulsed Source Current I

DS

GS

D

DM

D

J, TSTG

S

SM

30 V

±20

13.6

100

2.5 W

–55 to 150 °C

3.1 A

100

Thermal Resistance

Parameter Max. Units

Maximum Junction-to-Ambient R

Maximum Junction-to-Lead R

θJA

θJL

50 °C/W

20 °C/W

12/5/02

IRF7828

Electrical Characteristics

Parameter Min Typ Max Units Conditions

Drain-to-Source BV Breakdown Voltage

Static Drain-Source R on Resistance

Gate Threshold Voltage V

Drain-Source Leakage I Current

Current* – – 150 µA V

Gate-Source Leakage I Current

DSS

GSS

Total Gate Chg Cont FET Q

Total Gate Chg Sync FET Q

Pre-Vth Q Gate-Source Charge

Post-Vth Q Gate-Source Charge

Gate to Drain Charge Q

Switch Chg(Q

+ Qgd) Qsw– 3.7 –

gs2

Output Charge Q

Gate Resistance R

Turn-on Delay Time t

Rise Time t

d (on)

r

Turn-off Delay Time td

Fall Time t

f

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

30 – – V VGS = 0V, ID = 250µA

DSS

DS

GS(th)

– 9.5 12.5 mΩ VGS = 4.5V, ID = 10A

(on)

1.0 – – V VDS = VGS,ID = 250µA

– – 1.0 VDS = 24V, VGS = 0

DS

Tj = 125°C

– – ±100 nA VGS = ±20V

G

GS1

GS2

GD

oss

G

– 9.2 14 VGS= 5.0V, ID=15A, VDS=16V

– 7.3 – VGS = 5V, VDS< 100mV

– 2.5 – VDS = 15V, ID = 10A

– 0.8 – nC

– 2.9 –

– 6.1 – VDS = 10V, VGS = 0

– 2.3 – Ω

– 6.3 – VDD = 15V, ID = 10A

– 2.7 – ns VGS = 4.5V

– 9.7 – Clamped Inductive Load

(off)

– 7.3 –

iss

oss

rss

– 1010 –

– 360 – pF VDS = 15V, VGS = 0

– 110 –

= 24V, VGS = 0,

Source-Drain Rating & Characteristics

Parameter Min Typ Max Units Conditions

Diode Forward V Voltage*

Reverse Recovery Q Charge

Reverse Recovery Q

SD

– – 1.0 V IS = 10A, VGS = 0V

– 13 – nC di/dt ~ 700A/µs

rr

VDS = 16V, VGS = 0V, IS = 15A

– 13 – nC di/dt = 700A/µs

rr(s)

Charge (with Parallel (with 10BQ040) Schottky) VDS = 16V, VGS = 0V, IS = 15A

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Pulse width ≤ 400 µs; duty cycle ≤ 2%.  When mounted on 1 inch square copper board  Typ = measured - Q  Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q

measured at VGS = 5.0V, IF = 10A.

oss

OSS

2 www.irf.com

IRF7828

2.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 14A

V

= 10V

GS

1.5

) d e z

i

l a

m

r o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 1. Normalized On-Resistance

Vs. Temperature

)

20

Ω

m

( e

c n a

t s

i s e

15

R n O e

c

r u o S

o

t

10

n

i a

r D ,

) n o

( S D

5

R

2 4 6 8 10

V

Gate -to -Source Voltage (V)

GS,

ID = 14A

10000

) F p

( e

c n a

t

i c a p a

C ,

C

12

)

ID= 10A

10

V

( e

g a

t

l

8

o V

e c

r u

6

o S

o

t

e

t

4

a G

,

S G

2

V

VDS= 24V

VDS= 15V

0

0 5 10 15 20

Q

Total Gate Charge (nC)

G

Fig 2. Typical Gate Charge Vs.

Gate-to-Source Voltage

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

Ciss

1000

C

iss

rss

oss

Coss

100

10

1 10 100

Crss

VDS, Drain-to-Source Voltage (V)

SHORTED

ds

gd

Fig 3. On-Resistance Vs. Gate Voltage

Fig 4. Typical Capacitance Vs.

Drain-to-Source Voltage

www.irf.com 3

IRF7828

100.0

TJ = 150°C

)

Α

(

t n e

r

10.0

r u

C e

c

r u o S

o

t

n

1.0

i a

r D

,

D

I

0.1

2.0 3.0 4.0 5.0 6.0

TJ = 25°C

V

= 15V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics

100

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

100.0

10.0

1.0

0.1

TJ = 150°C

TJ = 25°C

V

0.0 0.5 1.0 1.5

VSD, Source-toDrain Voltage (V)

Fig 6. Typical Source-Drain Diode

Forward Voltage

GS

= 0V

)

A J h

t

Z (

e s n o p s e

R l a

m

r e h T

D = 0.50

10

1

0.1

0.01

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Fig 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

4 www.irf.com

SO-8 Package Details

D

5

- B -

8 7 6 5

5

E

- A 1 2 3 4

e

6X

- C -

0.25 (.010) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5

MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).

DIMENSIONS IS THE LENGTH OF LEAD FOR SOL DERING TO A SUBSTRATE..

6

B 8X

e1

A1

H

0.25 (.010) M A M

A

0.10 (.00 4)

θ

L 8X

K x 45°

6

IRF7828

INCHES MILLIMETERS

DIM

MIN MAX MIN MAX

A .0532 .0688 1.35 1.75

A1 .0040 .0098 0.10 0.25

B .014 .018 0.36 0.46

C .0075 .0098 0.19 0.25

D .189 .196 4.80 4.98

E .150 .157 3.81 3.99

e .050 BASIC 1.27 BASIC

e1 .025 BASIC 0.635 BASIC

H .2284 .2440 5.80 6.20

C 8X

K .011 .019 0.28 0.48

L 0.16 .050 0.41 1.27

θ

0° 8° 0° 8°

RECOMMENDED FOOTPRINT

0.72 (.028 ) 8X

6.46 ( .255 )

1.27 ( .050 ) 3X

1.78 (.07 0) 8X

SO-8 Part Marking

www.irf.com 5

IRF7828

SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLIN E CONFORMS TO EIA-481 & EIA -541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 12/02

6 www.irf.com