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HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Conv erters
• Low Conduction Losses
• Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
R
, gate charge and Cdv/dt-induced turn-on immunity .
DS(on)
The IRF7822 offers particulary low R
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
and high Cdv/
DS(on)
PD - 94279
IRF7822
1
S
2
S
3
S
4
SO-8
DEVICE CHARACTERISTICSU
IRF7822
R
(on)
DS
Q
G
Q
sw
Q
oss
5.0mΩ
44nC
12nC
27nC
Top View
A
8
D
7
D
6
D
5
DG
Absolute Maximum Ratings
Parameter Symbol IRF7822 Units
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain or Source T
Current (V
≥ 4.5V) TA = 70°C 13 A
GS
= 25°C I
A
Pulsed Drain CurrentQ I
Power Dissipation T
= 25°CP
A
T
= 70°C 3.0
A
Junction & Storage Temperature Range T
Continuous Source Current (Body Diode) I
Pulsed Source CurrentQ I
DS
GS
D
DM
D
J, TSTG
S
SM
30 V
±12
18
150
3.1 W
–55 to 150 °C
3.8 A
150
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-AmbientS R
Maximum Junction-to-Lead R
θJA
θJL
40 °C/W
20 °C/W
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IRF7822
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BV
Breakdown Voltage
Static Drain-Source R
on Resistance
Gate Threshold Voltage V
Drain-Source Leakage I
Current
Current* 150 µA V
Gate-Source Leakage I
Current
DSS
GSS
Total Gate Chg Cont FET Q
Total Gate Chg Sync FET Q
Pre-Vth Q
Gate-Source Charge
Post-Vth Q
Gate-Source Charge
Gate to Drain Charge Q
Switch Chg(Q
+ Qgd) Q
gs2
Output Charge Q
Gate Resistance R
Turn-on Delay Time t
Rise Time t
d (on)
r
Tur n-off Delay Time td
Fall Time t
f
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
30 –– VVGS = 0V, ID = 250µA
DSS
DS
GS(th)
(on)
5.0 6.5 mΩ VGS = 4.5V, ID = 15AR
1.0 V VDS = VGS,ID = 250µA
30 VDS = 24V, VGS = 0
DS
Tj = 100°C
±100 nA VGS = ±12V
G
G
GS1
GS2
GD
sw
oss
G
44 60 VGS=5.0V, ID=15A, VDS=16V
38 VGS = 5.0V, VDS< 100mV
13 VDS = 16V, ID = 15A
3.0 nC
9.0
12
27 VDS = 16V, VGS = 0
1.5 Ω
15 VDD = 16V, ID = 15A
5.5 ns VGS = 5.0V
(off)
22 Clamped Inductive Load
12
iss
oss
rss
– 5500 –
– 1000 – pF VDS = 16V, VGS = 0
– 300 –
= 24V, VGS = 0,
Source-Drain Rating & Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward V
Voltage*
Reverse Recovery Q
ChargeT
Reverse Recovery Q
SD
rr
rr(s)
1.0 V IS = 15AR, VGS = 0V
120 nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
108 nC di/dt = 700A/µs
Charge (with Parallel (with 10BQ040)
Schottky)T VDS = 16V, VGS = 0V, IS = 15A
Notes:
Q Repetitive rating; pulse width limited by max. junction temperature .
R Pulse width ≤ 400 µs; duty cycle ≤ 2%.
S When mounted on 1 inch square copper board
T Typ = measured - Q
UTypical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q
measured at VGS = 5.0V , IF = 15A.
oss
OSS
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IRF7822
)
2.0
1.5
1.0
15A
I =
D
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 1. Normalized On-Resistance
Vs. Temperature
)
0.010
Ω
0.009
0.008
0.007
ID = 15A
V =
4.5V
GS
°
6
D
I =
15A
5
4
2
1
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
100000
10000
V = 24V
DS
Q , Total Gate Charge (nC
G
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
gd
C
C
iss
rss
oss
Ciss
SHORTED
ds
0.006
0.005
, Drain-to -Source On Resistance (
0.004
DS(on)
0.003
R
3.0 4.0 5.0 6.0 7.0
V
Gate -to -Source Voltage (V)
GS,
Fig 3. On-Resistance Vs. Gate Voltage
1000
C, Capacitance(pF)
100
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Capacitance Vs.
Coss
Crss
Drain-to-Source Voltage
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IRF7822
100.00
)
TJ = 175°C
(Α
10.00
TJ = 25°C
, Drain-to-Source Current
D
I
1.00
1.0 2.0 3.0 4.0 5.0
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
100
100
°
T = 150 C
10
SD
I , Reverse Drain Current (A)
0.1
J
°
T = 25 C
J
1
V = 0 V
GS
0.2 0.5 0.7 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
Fig 6. Typical Source-Drain Diode
Forward Voltage
D = 0.50
10
thJA
Thermal Response (Z )
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJA A
P
DM
t
1 2
1
t
2
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SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIMENS IONS ARE S HOW N IN MILL IME T ERS ( IN CH ES ) .
4. OUT L IN E C ON F ORM S TO JED EC OU TLIN E M S-0 1 2A A.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
5
MO L D PR OTRU SIO N S NO T TO EXC EE D 0 .2 5 ( .0 06) .
DIMEN SIONS IS T HE L ENGT H OF LEA D F OR SOLD ER ING TO A SUBSTRAT E..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7822
IN CHE S M ILL IME TE RS
DIM
MIN MAX MIN M AX
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0 .10 0.25
B .014 .018 0 .36 0.46
C .00 7 5 .0 0 9 8 0 .1 9 0 . 2 5
D .18 9 .1 9 6 4.8 0 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 B AS IC 1 .27 BA S IC
e1 .0 2 5 B AS IC 0 .63 5 BA SIC
H .22 8 4 .2 4 4 0 5 .8 0 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
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IRF7822
SO-8 Tape and Reel
TERMINAL NUMBER 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES).
3. OUTLINE C ON FOR MS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CON FO R M S TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/01
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