Datasheet IRF7811AVPBF Specification

• N-Channel Application-Specific MOSFETs

D

DG

S

A

S

A

11 m

SW

Absolute M aximum Ratings

V

C

A

I

Thermal Resistance

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current applications

• 100% R

Tested

G

• Lead-Free

Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including

, gate charge and Cdv/dt-induced turn-on immunity.

R

DS(on)

The IRF7811AV offers an extremely low combination of Qsw & R synchronous FET applications.

for reduced losses in both control and

DS(on)

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.

IRF7811AVPbF

PD-95265

IRF7811AVPbF

1

2

3

4

SO-8

DEVICE CHARACTERISTICS

R

DS(on)

Q

G

Q

OSS

Top View

IRF7811AV

Ω

17 nC

6.7 nC

8.1 nC

8

7

6

5

Parameter

Drain-to-Source Voltage Gate-to-Source Voltage

ontinuous Output Current

TA = 25°C (VGS ≥ 4.5V) TL = 90°C Pulsed Drain Current

Power Diss ipation

c

e 

TA = 25°C

= 90°C

T

L

Junctio n & Storage Temperature Range Continuous Source Current (Body Dio de) Pulsed S ourc e C urr ent

c

Parameter

Maximum Junction-to-Ambient Maximum Junction-to-Lead

eh

h

Symbol Units

DS

V

GS

I

D

I

DM

P

D

, T

T

J

STG

I

S

SM

IRF7811AV

30

±20

10.8

11.8 100

2.5

3.0

-55 to 150

2.5 50

V

W

°C

A

Symbol Typ Max Units

R

JA

θ

R

JL

θ

––– 50 ––– 20

°C/W

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08/17/04

IRF7811AVPbF

Electrical Characteristics

Diode Characteristics

–––

1.3

V

Parameter Symbol Min Typ Max Units

Drain- to-Source Bre ak d own Voltage Static Drain-to-Source On-Resistance Gate Th reshold Voltage

Drain- to-Source Le ak ag e Cu rrent

Gate-to-Source Leakage Current Total Gate Charge, Control FET Total Gate Charge, Synch FET Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-D rain ("Miller") Charg e Switch Charge (Q

+ Qgd)Q

gs2

Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capa ci tan c e Output Capacitance Reverse Transfer Capacitance

V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Q

Q Q Q

Q

R t

d(on)

t

d(off)

C

30 ––– ––– V

––– 11 14

1.0 ––– 3.0 V ––– ––– 50 µA ––– ––– 20 µA ––– ––– 100 mA ––– ––– ±100 nA ––– 17 26 nC

g

––– 14 21

g

––– 3.4 –––

gs1

––– 1.6 –––

gs2

––– 5.1 –––

gd

––– 6.7 –––

SW

––– 8.1 12

OSS

0.5 ––– 4.4

G

––– 8.6 ––– ns

t

––– 21 –––

r

––– 43 –––

t

––– 10 –––

f

––– 1801 ––– pF

iss

––– 723 –––

oss

––– 46 –––

rss

= 0V, ID = 250µA

V

GS

V

= 4.5V, ID = 15A

Ω

m

GS

VDS = VGS, ID = 250µA V

= 30V, VGS = 0V

DS

V

= 24V, VGS = 0V

DS

V

= 24V, VGS = 0V, TJ = 100°C

DS

= ± 20V

V

GS

V

= 24V, ID = 15A, VGS = 5.0V

DS

V

= 5.0V, VDS < 100mV

GS

VDS = 16V, ID = 15A

V

= 16V, VGS = 0

DS

Ω

V

= 16V

DD

I

= 15A

D

V

= 5.0V

GS

Clamped Inductive Load V

= 0V

GS

V

= 10V

DS

Conditions

d

Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Charge

(with Parallel Schottsky)

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Pulse width ≤ 400 µs; duty cycle ≤ 2%.  When mounted on 1 inch square copper board, t < 10 sec.  Typ = measured - Q  Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q

 Rθ is measured at TJ approximately 90°C

Parameter Symbol Min Typ Max Units

V

SD

f

oss

Q

rr

Q

––– 43 ––– nC

rr

nC–––50–––

measured at VGS =5.0V, IF = 15A.

OSS

Conditions

T

= 25°C, IS = 15A d ,VGS = 0V

J

di/dt = 700A/µs

= 16V, VGS = 0V, ID = 15A

V

DD

di/dt = 700A/µs , (with 10BQ040) V

= 16V, VGS = 0V, ID = 15A

DD

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IRF7811AVPbF

2.0

1.5

1.0

I =

D

15A

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

V =

GS

°

Figure 1. Normalized On-Resistance vs. Temperature

)

0.020

Ω

( e

c n

0.018

a

t

s

i

s e R

0.016

n O e

c

r u

0.014

o S

o

t

-

0.012

n

i a

r D ,

)

0.010

n o

( S D

0.008

R

3.0 6.0 9.0 12.0 15.0

V

Gate -to -Source Voltage (V)

GS,

ID = 15A

Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage

100

6

15A

I =

D

VDS = 16V

4

2

GS

V , Gate-to-Source Voltage (V)

4.5V

0

0 5 10 15 20

Q , Total Gate Charge (nC)

G

Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge

3000

2500

) F

2000

p

( e

c n a

t

i

1500

c a p a

C ,

1000

C

500

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

iss

gs

C

= C

rss

C

= C

oss

ds

gd

+ C

ds

gd

Ciss

Coss

Crss

VDS, Drain-to-Source Voltage (V)

Figure 4. Typical Capacitance vs. Drain-to-Source Voltage

100

SHORTED

°

T = 150 C

J

10

°

T = 25 C

J

1

D

I , Drain-to-Source Current (A)

V = 15V

DS

0.1

2.0 2.5 3.0 3.5 4.0 4.5 5.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Figure 5. Typical Transfer Characteristics

10

1

SD

I , Reverse Drain Current (A)

0.1

0.3 0.6 0.9 1.2 1.5

Figure 6. Typical Source-Drain Diode Forward Voltage

°

T = 150 C

J

T = 25 C

J

V ,Source-to-Drain Voltage (V)

SD

°

V = 0 V

GS

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IRF7811AVPbF

100

D = 0.50

thJA

0.20

10

0.10

0.05

0.02

1

0.01 SINGLE PULSE

Thermal Response (Z )

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

(THERMAL RESPONSE)

Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

P

DM

1 2

J DM thJA A

t

1

t

2

V

90%

10% V

gs

125nS

Repetition ra te:1 00H z

Mic4452BM

50 u

5 uH

Schottky -6 A

450

50 Ohm s pro b e

50 u

8V

VDD

16Vz500mW

ds

t

d(off)

t

r

t

d(on)tf(v)

(v)

Switching Time Waveforms

Figure 8. Clamped Inductive load test diagram and switching waveform

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SO-8 Package Outline

]

Dimensions are shown in millimeters (inches)

D B

A

87

6

E

e

6X

5

65

4312

e1

H

0.25 [.010]

A

C

IRF7811AVPbF

.0688 .0098 .020

.1968 .1574

.2440 .0196 .050

8°

MILLIMETERSINCHES

MIN MAX

1.35

1.75

0.10

0.25

0.33

0.51

4.80

5.00

3.80

4.00

1.27 BASIC

5.80

6.20

0.25

0.50

0.40

1.27

0°

8°

DIM

MIN MAX

.0532

A

.0040

A1

.013

b c .0075 .0098 0.19 0.25

.189

A

y

D

.1497

E

.050 BASIC

e

e1

.025 BASIC 0.635 BASIC .2284

H

.0099

K

.016

L

0°

y

K x 45°

0.25 [.010] C A B

NOTES :

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT LINE CONFORMS TO JE DEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

SO-8 Part Marking

EXAMPLE: THIS IS AN IRF7101 ( MOSFET)

INTERNATIONAL

RECTIFIER

LOGO

8X b

A1

0.10 [.004] 8X L

7

6.46 [.255]

3X 1.27 [.050]

8X c

FOOT PRINT

8X 0.72 [.028]

8X 1.78 [.070

DATE CODE (YWW) P = DE S IGNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF TH E YEAR

XXXX

F7101

WW = WEEK A = ASSEMBLY SITE CODE

LOT CODE PART NUMBER

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IRF7811AVPbF

N 1 2 3

SO-8 Tape and Reel

TERM INAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

OTES: . CONTROLLING DIMENSION : MILLIMETER. . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). . OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRE CTION

14.40 ( .566 )

12.40 ( .488 )

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/04

www.irf.com6

IMPORTANT NOTICE

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”) .

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies office

(

www.infineon.com

).

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.