Datasheet IRF 7759 Datasheet

PD - 96283

IRF7759L2TRPbF

IRF7759L2TR1PbF

l RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter

Primary Switch Socket

l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity

DirectFET Power MOSFET 

Typical values (unless otherwise specified)

V

DSS

75V min ±20V max

Q

g tot

200nC 62nC 3.0V

V

Q

GS

gd

R

DS(on)

1.8mΩ@ 10V

V

gs(th)

l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified

Applicable DirectFET Outline and Substrate Outline 

D

G

S

S S

L8

S

D

S

DirectFET ISOMETRIC

SB SC M2 M4 L4 L6 L8

Description

The IRF7759L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to

achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.

The IRF7759L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters.

Absolute Maximum Ratings

Parameter Units

V

DS

V

GS

I

@ TC = 25°C

D

ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C I

DM

E

AS

I

AR

)

8

Ω

m

( e

c n a

t s

6

i s e

R n O e

c

4

r u o S

o

t

n

i a

2

r D ,

) n o ( S D

0

R

Fig 1. Typical On-Resistance vs. Gate Voltage

Notes:

2 4 6 8 10 12 14 16 18 20

Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V Continuous Drain Current, V Continuous Drain Current, V Continuous Drain Current, V

Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current

V

Gate -to -Source Voltage (V)

GS,

g

TJ = 125°C

TJ = 25°C

g

ID = 96A

@ 10V

GS

@ 10V

GS

@ 10V

GS

@ 10V

GS

h

 Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET Website.  Surface mounted on 1 in. square Cu board, steady state.

(Silicon Limited)

(Package Limited)

 T

f f e

C

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T

f

1.95

) Ω

m

(

R l

a c

i p y T

TA= 25°C

1.85

) n o

( S D

1.75

1.65

15 30 45 60 75 90 105

Fig 2. Typical On-Resistance vs. Drain Current

measured with thermocouple mounted to top (Drain) of part.

= 25°C, L = 0.056mH, RG = 25Ω, I

J

Max.

75

±20

160 113

26 375 640 257

96

VGS = 7.0V

VGS = 8.0V

VGS = 10V

VGS = 15V

ID, Drain Current (A)

AS

V

A

mJ

A

= 96A.

www.irf.com 1

11/16/09

IRF7759L2TR/TR1PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

V

/∆T

∆Β

DSS

R

DS(on)

V

GS(th)

∆V

/∆T

GS(th)

I

DSS

I

GSS

gfs Forward Transconductance 74 ––– ––– S Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-to-Source Breakdown Voltage 75 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 1.8 2.3

Gate Threshold Voltage 2.0 3.0 4.0 V

Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C

J

Drain-to-Source Leakage Current ––– ––– 20

––– ––– 250

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 200 300

Pre-Vth Gate-to-Source Charge ––– 37 –––

Post-Vth Gate-to-Source Charge ––– 11 –––

Gate-to-Drain Charge ––– 62 93

Gate Charge Overdrive ––– 91 ––– See Fig. 9 Switch Charge (Q

gs2

+ Qgd)

––– 73 –––

Output Charge ––– 60 ––– nC

Gate Resistance ––– 1.1 ––– Ω

Turn-On Delay Time ––– 18 –––

Rise Time ––– 37 –––

Turn-Off Delay Time ––– 80 –––

Fall Time ––– 33 –––

Input Capacitance ––– 12222 –––

Output Capacitance ––– 1465 –––

Reverse Transfer Capacitance ––– 609 –––

Output Capacitance ––– 7457 –––

Output Capacitance ––– 955 –––

Parameter Min. Typ. Max. Units

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

g

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 64 96 ns

Reverse Recovery Charge ––– 150 225 nC

––– ––– 160

––– ––– 640

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

V

mΩ

µA

nA

nC

ns

= 10V, ID = 96A

GS

= VGS, ID = 250µA

V

DS

= 75V, VGS = 0V

V

DS

VDS = 60V, VGS = 0V, TJ = 125°C

VGS = 20V

V

= -20V

GS

V

= 25V, ID = 96A

DS

V

= 38V

DS

= 10V

V

GS

I

= 96A

D

= 16V, VGS = 0V

V

DS

V

= 38V, VGS = 10V

DD

I

= 96A

D

R

=1.8Ω

G

= 0V

V

GS

VDS = 25V

pF

ƒ = 1.0MHz

= 0V, VDS = 1.0V, f=1.0MHz

V

GS

VGS = 0V, VDS = 60V, f=1.0MHz

Conditions

MOSFET symbol

showing the

A

integral reverse

p-n junction diode.

= 25°C, IS = 96A, VGS = 0V

T

J

TJ = 25°C, IF = 96A, VDD = 38V

di/dt = 100A/µs

i

= 2mA

D

i

i

i

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Pulse width ≤ 400µs; duty cycle ≤ 2%.

2 www.irf.com

τ

Absolute Maximum Ratings

PD @TC = 25°C PD @TC = 100°C Power Dissipation PD @TA = 25°C T

P

T

J

T

STG

Power Dissipation

Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range

Thermal Resistance

R R R R R

θJA

θJ-Can

θJ-PCB

10

W

/

1

C °

)

C J h

t

0.1

Z (

e s n o p

0.01

s e

R l a

m

r e

0.001

h T

0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1

Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Can

fl

Junction-to-PCB Mounted ––– 0.5

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

IRF7759L2TR/TR1PbF

Parameter Units

f f c

Parameter Typ. Max. Units

e

j k

R

1

2

R

1

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

2

τ

2

τ

2

t1 , Rectangular Pulse Duration (sec)

––– 45

12.5 –––

––– 1.2

R

3

R

3

τ

3

4

τ

3

Max.

125

63

3.3

270

-55 to + 175

20 ––– °C/W

Ri (°C/W) τi (sec)

4

R

4

0.10804 0.000171

τ

C

0.61403 0.053914

τ

4

0.45202 0.006099

0.00001 0.036168

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

W

°C

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case 

Notes:

 Surface mounted on 1 in. square Cu board, steady state.  T

measured with thermocouple incontact with top (Drain) of part.

C

 Used double sided cooling, mounting pad with large heatsink.

 Surface mounted on 1 in. square Cu board (still air).

www.irf.com 3

 Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air)

 Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

 R

is measured at T

θ

of approximately 90°C.

J

IRF7759L2TR/TR1PbF

1000

TOP 15V

)

100

A

( t n e

r

r u

10

C e

c

r u o S

-

1

o

t

n

i a

r D

,

0.1

D

I

60µs

≤

3.75V

PULSE WIDTH

BOTTOM 3.75V

Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

1000

V

= 25V

DS

≤

) A

( t

100

n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

60µs PULSE WIDTH

10

1

TJ = 175°C

TJ = 25°C TJ = -40°C

0.1 2 2.5 3 3.5 4 4.5 5 5.5 6

VGS, Gate-to-Source Voltage (V)

Fig 6. Typical Transfer Characteristics

VGS

10V

7.00V

5.50V

5.00V

4.50V

4.00V

1000

VGS

10V

7.00V

5.50V

5.00V

4.50V

4.00V

60µs

≤

3.75V

PULSE WIDTH

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

TOP 15V

100

BOTTOM 3.75V

10

D

Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Output Characteristics

2.5

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 96A

V

= 10V

GS

2.0

) d e z

i

l

1.5

a m

r o

N

(

1.0

0.5

-60 -20 20 60 100 140 180

TJ , Junction Temperature (°C)

Fig 7. Normalized On-Resistance vs. Temperature

100000

) F

10000

p

( e

c n a

t

i c a p a

C

1000

, C

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

+ Cgd, C

+ C

iss

oss

rss

SHORTED

ds

gd

100

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

14

ID= 96A

12

) V

( e

g

10

a

t

l o V

e

8

c

r u o S

-

6

o

t

e

t a

4

G ,

S G

V

2

VDS= 60V

VDS= 38V

VDS= 15V

0

0 50 100 150 200 250 300

QG, Total Gate Charge (nC)

Fig 9. Typical Total Gate Charge vs

Gate-to-Source Voltage

4 www.irf.com

IRF7759L2TR/TR1PbF

1000

TJ = 175°C

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

TJ = 25°C TJ = -40°C

100

10

1

V

GS

0.1

0.2 0.4 0.6 0.8 1.0 1.2

VSD, Source-to-Drain Voltage (V)

= 0V

Fig 10. Typical Source-Drain Diode Forward Voltage

200

160

) A

( t n

120

e

r

r u

C n

i a

r

80

D ,

D

I

40

10000

) A

1000

( t n e

r

r u

C

100

e c

r u o S

o

t

n

i a

r D ,

D

I

4.5

)

4.0

V

( e

g

3.5

a

t

l o V

3.0

d

l o h s e

2.5

r h

t e

t

2.0

a G

,

) h

1.5

t

( S G

V

1.0

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

DC

10

1

Tc = 25°C Tj = 175°C Single Pulse

0.1 0 1 10 100

VDS, Drain-to-Source Voltage (V)

1msec

10msec

Fig11. Maximum Safe Operating Area

ID = 1.0A

ID = 1.0mA ID = 250µA

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 12. Maximum Drain Current vs. Case Temperature

1200

) J

m

( y

1000

g

r e n E

e

800

h c n a

l a v

600

A e

s

l u P

400

e

l g n

i S ,

200

S A

E

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy Vs. Drain Current

0.5

-75 -50 -25 0 25 50 75 100 125 150 175

I

D

TOP 15.39A

23.97A BOTTOM 96A

TJ , Temperature ( °C )

Fig 13. Typical Threshold Voltage vs.

Junction Temperature

www.irf.com 5

IRF7759L2TR/TR1PbF

1000

Duty Cycle = Single Pulse

100

) A

( t n e

r

r u

C

10

e h c n a

l a v A

1

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τj = 25°C and

Tstart = 150°C.

0.1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

300

250

) J

m

( y

g

200

r e n E

e h

150

c n a

l a v A

100

,

R A

E

50

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy Vs. Temperature

0.01

0.05

0.10

Fig 15. Typical Avalanche Current Vs.Pulsewidth

TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 96A

tav (sec)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Tj = 150°C and

Tstart =25°C (Single Pulse)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

. This is validated for

jmax

is

3. Equation below based on circuit and waveforms shown in Figures 19a, 19b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

AS (AR)

= P

·f

av

D (ave)·ta

thJC





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

Period

P.W.

Body Diode Forward

Current

Diode Recovery

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

di/dt

dv/dt

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• di/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied

+

Voltage

-

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs

6 www.irf.com

IRF7759L2TR/TR1PbF

A

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

0

20K

1K

DUT

Fig 18a. Gate Charge Test Circuit

V

DS

L

15V

L

DRIVER

VCC

Id

Vgs

Qgs2QgdQgodr

Fig 18b. Gate Charge Waveform

t

p

Vds

Vgs(th)

Qgs1

V

(BR)DSS

V

R

GS

G

20V

D.U.T

I

AS

0.01

t

p

Ω

Fig 19a. Unclamped Inductive Test Circuit

R

V

DS

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D

D.U.T.

+

V

DD

-

I

AS

Fig 19b. Unclamped Inductive Waveforms

+

V

DD

-

Fig 20a. Switching Time Test Circuit

www.irf.com 7

Fig 20b. Switching Time Waveforms

IRF7759L2TR/TR1PbF

DirectFET Board Footprint, L8 (Large Size Can).

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations

D

G

G = GATE D = DRAIN S = SOURCE

D

SS

D

SS

D

8 www.irf.com

IRF7759L2TR/TR1PbF

DirectFET Outline Dimension, L8 Outline (LargeSize Can).

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations

DirectFET Part Marking

DIMENSIONS

METRIC

MIN

9.05

6.85

5.90

0.55

0.58

1.18

0.98

0.73

0.38

1.34

2.52

0.59

0.03

0.09

MAX

9.15

7.10

6.00

0.65

0.62

1.22

1.02

0.77

0.42

1.47

2.69

0.70

0.08

0.18

CODE A B C D E F G H J K L M N P

GATE MARKING

LOGO

PART NUMBER

BATCH NUMBER

IMPERIAL

MIN

0.356

0.270

0.232

0.022

0.023

0.046

0.015

0.029

0.015

0.053

0.099

0.023

0.001

0.003



MAX

0.360

0.280

0.236

0.026

0.024

0.048

0.017

0.030

0.017

0.058

0.106

0.028

0.003

0.007

DATE CODE

Line above the last character of the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

www.irf.com 9

IRF7759L2TR/TR1PbF

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm Std reel

quantity is 4000 parts. (ordered as IRF7759L2PBF).

REEL DIMENSIONS

STANDARD OPTION (QTY 4 000)

CODE A B C D E F G H

METRIC IMPERIAL

MIN

330.0

20.2

12.8

1.5

100.0 N.C

16.4

15.9

MAX N.C N.C

13.2 N.C N.C

22.4

18.4

MIN

12.992

0.795

0.504

0.059

3.937 N.C

0.646

0.626

MAX N.C N.C

0.520 N.C N.C

0.889

0.724

LOADED TAPE FEED DIRECTION

NOTE: CONTROLLING DIMENSIONS IN MM

CODE

A B C D E F G H

DIMENSIONS

METRIC

MIN

11.90

3.90

15.90

7.40

7.20

9.90

1.50

MAX

12.10

4.10

16.30

7.60

7.40

10.10 NC

1.60

IMPERIAL

MIN

0.469

0.154

0.626

0.291

0.284

0.390

0.059

MAX

0.476

0.161

0.642

0.299

0.291

0.398 NC

0.063

10 www.irf.com

IRF7759L2TR/TR1PbF

Part number Package Type Standard Pack

Form Quantity

IRF7759L2TRPbF DirectFET2 Large Can Tape and Reel 4000 "TR" suffix

IRF7759L2TR1PbF DirectFET2 Large Can Tape and Reel 1000 "TR1" suffix

Qualification Information

Qualification level

†

Industrial

(per JEDEC JESD47F

††

†††

guidelines)

Comments: This family of products has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level.

Moisture Sensitivity Level DFET2

RoHS Compliant

(per JEDEC J-STD-020D

Yes

MSL1

†††

 Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

 Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

 Applicable version of JEDEC standard at the time of product release.

Note

)

Data and specifications subject to change without notice.

This product has been designed and qualified to MSL1 rating for the Industrial market.

Additional storage requirement details for DirectFET products can be found in application note AN1035 on IRs Web site.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.11/2009

www.irf.com 11