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l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Common Drain Configuration
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for,
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
provides the de-
PD - 94174
IRF7757
HEXFET® Power MOSFET
V
DSS
R
DS(on)
max (m
20V 35@VGS = 4.5V 4.8A
40@VGS = 2.5V 3.8A
8 = D
7 = D
6 = D
5 = D
8
7
6
5
1
2
3
4
1 = S1
2 = G1
3 = S2
4 = G2
Ω)Ω)
Ω) I
Ω)Ω)
TSSOP-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.8
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 3.9 A
I
DM
PD @TA = 25°C Power Dissipation 1.2
PD @TA = 70°C Power Dissipation 0.76
V
GS
T
J, TSTG
Drain- Source Voltage 20 V
Pulsed Drain Current 19
W
Linear Derating Factor 9.5 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 105 °C/W
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IRF7757
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.013 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 35 VGS = 4.5V, ID = 4.8A
––– ––– 40 VGS = 2.5V, ID = 3.8A
mΩ
Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, ID = 250µA
Forward Transconductance 11 ––– ––– SVDS = 10V, ID = 4.8A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
µA
nA
GS
= 12V
Total Gate Charge ––– 15 23 ID = 4.8A
Gate-to-Source Charge ––– 2.5 ––– nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 4.8 ––– VGS = 4.5V
Turn-On Delay Time ––– 9.5 ––– VDD = 10V
Rise Time ––– 9.2 ––– ID = 1.0A
Turn-Off Delay Time ––– 36 ––– RG = 6.2Ω
ns
Fall Time ––– 14 ––– VGS = 4.5V
Input Capacitance ––– 1340 ––– VGS = 0V
Output Capacitance ––– 180 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 132 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
1.2
19
A
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.2A, VGS = 0V
Reverse Recovery Time ––– 20 30 ns TJ = 25°C, IF = 1.2A
Reverse Recovery Charge ––– 10 15 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
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IRF7757
1000
100
10
1
, Drain-to-Source Current (A)
D
I
VGS
TOP 7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.00
100
10
, Drain-to-Source Current (A)
D
I
VGS
TOP 7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
20µs PULSE WIDTH
1
0.1 1 10 100
Tj = 150°C
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
4.8A
I =
D
)
(Α
1.5
TJ = 150°C
10.00
1.0
(Normalized)
, Drain-to-Source Current
D
I
1.00
TJ = 25°C
V
= 15V
DS
20µs PULSE WIDTH
1.5 2.0 2.5 3.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
4.5V
GS
°
Vs. Temperature
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IRF7757
10000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Ciss
1000
C, Capacitance(pF)
Coss
Crss
100
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100.00
SHORTED
ds
5
I =
4.8A
D
4
3
2
1
GS
V , Gate-to-Source Voltage (V)
0
0 4 8 12 16 20
V = 16V
DS
V = 10V
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10.00
TJ = 150°C
10
100µsec
1msec
1.00
, Reverse Drain Current (A)
SD
I
0.10
0.1 0.5 0.9 1.2 1.6 2.0
VSD, Source-toDrain Voltage (V)
TJ = 25°C
Fig 7. Typical Source-Drain Diode
V
GS
= 0V
1
, Drain-to-Source Current (A)
D
I
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0 1 10 100
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10msec
Forward Voltage
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IRF7757
5.0
4.0
3.0
2.0
D
I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
100
thJC
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1 2
1
t
2
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7757
)
0.05
Ω
0.04
ID = 4.8A
0.03
, Drain-to -Source On Resistance (
DS(on)
0.02
R
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs. Gate
Voltage
)
0.050
Ω
V
= 2.5V
GS
0.040
V
= 4.5V
GS
0.030
, Drain-to-Source On Resistance (
DS (on)
R
0.020
0 5 10 15 20
ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
12V
V
GS
Fig 14b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
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IRF7757
1.3
1.1
0.9
ID = 250µA
0.7
Gate threshold Voltage (V)
0.5
GS(th)
V
0.3
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
120
110
100
90
80
70
60
50
Power (W)
40
30
20
10
0
1.00 10.00 100.00 1000.00
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7757
TSSOP-8 Part Marking Information
EXA MPLE: THIS IS AN IRF7702
LOT CODE (XX)
PART NUMBER
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
XXYW
7702
DATE CODE (YW)
TABLE 1
W ORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
W ORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000 K
WORK
YWEEK
01
1
02
2
3C03
404
5
6
7
8
9
0
24
25
TABLE 2
WORK
Y
WEE K26W
AA27
B
28
C
29
D
30
E
F
G
H
J
50
51
52
W
A
B
D
X
Y
Z
B
C
D
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
16 mm
8 mm
FEED DI REC TION
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Ø 13"
16mm
NOTE S :
1. TAPE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541.
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TSSOP-8 Package Outline
IRF7757
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/01
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