Page 1
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
provides thedesigner
PD -94159
IRF7756
HEXFET® Power MOSFET
V
DSS
-12V 0.040@VGS = -4.5V ±4.3A
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
R
max I
DS(on)
0.058@VGS = -2.5V ±3.4A
0.087@VGS = -1.8V ±2.2A
8
7
6
5
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.5 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 1.0 W
PD @TA = 70°C Maximum Power Dissipation 0.64 W
Linear Derating Factor 8.0 mW/°C
V
GS
TJ , T
STG
Drain-Source Voltage -12 V
Pulsed Drain Current -17
Gate-to-Source Voltage ±8.0 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 125 °C/W
www.irf.com 1
5/10/01
Page 2
IRF7756
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
R
V
GS(th)
g
fs
I
DSS
I
GSS
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
(BR)DSS
DS(on)
g
gs
gd
Drain-to-Source Breakdown Voltage -12 – – – ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.006 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.040 VGS = -4.5V, ID = -4.3A
––– ––– 0.058 VGS = -2.5V, ID = -3.4A
Ω
––– ––– 0.087 VGS = -1.8V, ID = -2.2A
Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250µA
Forward Transconductance 13 ––– ––– S VDS = -10V, ID = -4.3A
Drain-to-Source Leakage Current
––– ––– -1.0 VDS = -9.6V, VGS = 0V
µA
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V
nA
Total Gate Charge ––– 12 18 ID = -4.3A
Gate-to-Source Charge ––– 1. 8 2.7 nC VDS = -6.0V
Gate-to-Drain ("Miller") Charge ––– 2. 9 4.4 VGS = -4.5V
Turn-On Delay Time ––– 24 –– – VDD = -6.0V,
Rise Time ––– 33 ––– ID = -1.0A
ns
Turn-Off Delay Time ––– 180 ––– RG = 6.0Ω
Fall Time ––– 140 ––– VGS = -4.5V
Input Capacitance ––– 1400 ––– VGS = 0V
Output Capacitance ––– 310 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 2 40 –– – ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
-1.0
––– ––– -17
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V
Reverse Recovery Time ––– 35 53 n s TJ = 25°C, IF = -1.0A
Reverse Recovery Charge ––– 20 30 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t
≤ 10sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2 www.irf.com
D
S
Page 3
IRF7756
100
10
1
0.1
D
-I , Drain-to-Source Current (A)
0.01
0.1 1 10
VGS
TOP
-7.5V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
BOTTOM
-0.8V
-0.8V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10
VGS
TOP
-7.5V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
BOTTOM
-0.8V
-0.8V
20µs PULSE WIDTH
T = 150 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.0
-4.3A
I =
D
)
(Α
10
TJ = 150°C
1
, Drain-to-Source Current
D
-I
0
0.5 1.0 1.5 2.0
-VGS, Gate-to-Source Voltage (V)
TJ = 25°C
V
= -10V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
-4.5V
GS
°
Vs. Temperature
www.irf.com 3
Page 4
IRF7756
2400
2000
1600
1200
800
C, Capacitance(pF)
400
0
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
gd
iss
C
rss
C
oss
Ciss
Coss
Crss
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
ds
10
I =
-4.3A
D
V =-9.6V
DS
V =-6V
DS
GS
8
6
4
2
-V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
°
T = 150 C
J
1
°
T = 25 C
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
, Drain-to-Source Current (A)
TA = 25°C
D
-I
Tj = 150°C
Single Pulse
0.1
0.1 1 10 100
-V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
Fig 8. Maximum Safe Operating Area
Forward Voltage
4 www.irf.com
Page 5
IRF7756
5.0
4.0
3.0
2.0
D
-I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
R
D.U.T.
D
-
+
V
DD
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
V
10%
d(on)tr
GS
°
90%
V
DS
t
d(off)tf
Fig 10b. Switching Time Waveforms
100
thJA
D = 0.50
0.20
0.10
10
0.05
P
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
DM
t
1 2
1
t
2
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com 5
Page 6
IRF7756
)
0.07
Ω
0.06
0.05
)
Ω
0.040
0.035
0.030
V
GS
= -1.8V
0.04
ID = -4.3A
0.03
, Drain-to -Source On Resistance (
DS(on)
0.02
R
1.0 2.0 3.0 4.0 5.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Q
G
Q
GS
Q
GD
V
= -2.5V
GS
0.025
, Drain-to-Source On Resistance (
V
= -4.5V
DS (on)
R
0.020
GS
0481216
-ID , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T .
50KΩ
.2µF
12V
.3µF
D.U.T .
V
+
DS
V
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
GS
-3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
Page 7
IRF7756
0.7
0.6
0.5
0.4
Gate threshold Voltage (V)
0.3
GS(th)
-V
0.2
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
ID = -250µA
Fig 14. Threshold Voltage Vs. Tempera-
ture
80
60
40
Power (W)
20
0
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
Fig 15. Typical Power Vs. Time
www.irf.com 7
Page 8
IRF7756
EXAMPLE: THIS IS AN IRF7702
TSSOP-8 Part Marking Information
LOT CODE (XX)
PART NUMBER
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
XXYW
7702
DATE CODE (YW)
TABLE 1
W ORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
WORK
YWEEK
YEAR
1
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000 K
01
2
02
3C03
404
5
6
7
8
9
24
0
25
TABLE 2
WORK
Y
WEEK26W
AA27
B
28
C
29
D
30
E
F
G
H
J
50
51
52
W
A
B
D
X
Y
Z
B
C
D
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
16 mm
8 mm
FEED D I R ECTION
8 www.irf.com
Ø 13"
16mm
NOTE S :
1. TAPE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541.
Page 9
TSSOP-8 Package Outline
IRF7756
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 5/01
www.irf.com 9
Loading...