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l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
provides thedesigner
PD - 94224
IRF7754
HEXFET® Power MOSFET
V
DSS
-12V 25mΩ@VGS = -4.5V -5.4A
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
R
max I
DS(on)
34mΩ@VGS = -2.5V -4.6A
49mΩ@VGS = -1.8V -3.9A
8
7
6
5
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -5.5
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -4.4 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 1W
PD @TA = 70°C Maximum Power Dissipation 0.64 W
Linear Derating Factor 0.01 W/°C
V
GS
TJ , T
STG
Drain-Source Voltage -12 V
Pulsed Drain Current -22
Gate-to-Source Voltage ±8 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 125 °C/W
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IRF7754
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
R
V
GS(th)
g
fs
I
DSS
I
GSS
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
C
C
C
(BR)DSS
DS(on)
g
gs
gd
iss
oss
rss
Drain-to-Source Breakdown Voltage -12 ––– ––– VVGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.008 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 25 V
––– ––– 34 V
mΩ
= -4.5V, ID = -5.4A
GS
= -2.5V, ID = -4.6A
GS
––– ––– 49 VGS = -1.8V, ID = -3.9A
Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250µA
Forward Transconductance 16 ––– ––– SVDS = -10V, ID = -5.4A
Drain-to-Source Leakage Current
––– ––– -1.0 VDS = -9.6V, VGS = 0V
µA
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8V
nA
Total Gate Charge ––– 22 ––– ID = -5.4A
Gate-to-Source Charge ––– 3.9 ––– nC VDS = -6V
Gate-to-Drain ("Miller") Charge ––– 4.8 ––– VGS = -4.5V
Turn-On Delay Time ––– 9.8 14.7 VDD = -6V, VGS = -4.5V
Rise Time ––– 18 27 ID = -1.0A
ns
Turn-Off Delay Time ––– 267 401 RD = 6Ω
Fall Time ––– 191 287 RG = 6Ω
Input Capacitance ––– 1984 ––– VGS = 0V
Output Capacitance ––– 618 ––– pF VDS = -6V
Reverse Transfer Capacitance ––– 385 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
–––
–––
-1.0
-22
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V
Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = -1.0A
Reverse Recovery Charge ––– 27 41 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
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IRF7754
100
10
1
0.1
, Drain-to-Source Current (A)
D
-I
-1.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
100
10
1
, Drain-to-Source Current (A)
D
-I
-1.0V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
-5.5A
I =
D
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
°
T = 150 C
10
1
D
-I , Drain-to-Source Current (A)
0.1
J
°
T = 25 C
J
V = -10V
DS
20µs PULSE WIDTH
1.0 1.2 1.4 1.6 1.8 2.0
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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IRF7754
)
3200
2800
2400
2000
1600
1200
C, Capacitance(pF)
800
400
0
1 10 100
Ciss
Coss
Crss
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
+ Cgd, C
+ C
gd
ds
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
6
I =
-5.4A
D
5
4
3
2
GS
1
-V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V =-9.6V
DS
V =-6V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on
10
°
T = 150 C
J
T = 25 C
1
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
°
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF7754
6.0
5.0
4.0
3.0
2.0
D
-I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
100
thJA
D = 0.50
0.20
0.10
10
0.05
P
0.02
0.01
1
Thermal Response (Z )
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7754
0.070
)
Ω
0.060
0.050
0.040
ID = -5.5A
0.030
, Drain-to -Source On Resistance (
0.020
DS(on)
R
0.010
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.1
Ω
0.08
V
= -1.8V
0.06
GS
0.04
V
= -2.5V
GS
0.02
V
= -4.5V
GS
RDS ( on ) , Drain-to-Source On Resistance (
0
0.0 5.0 10.0 15.0 20.0 25.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
10 V
Q
G
Q
GS
V
G
Q
GD
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
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IRF7754
1.0
0.8
( V )
0.6
GS(th)
-V
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
300
200
ID = -250µA
Power (W)
100
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7754
TSSOP-8 Part Marking Information
EXA MPLE: THIS IS AN IRF7702
LOT CODE (XX)
PART NUMBER
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
XXYW
7702
DATE CODE (YW)
TABLE 1
W ORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
W ORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000 K
WORK
YWEEK
1
01
2
02
3C03
404
5
6
7
8
9
0
24
25
TABLE 2
WORK
Y
WEE K26W
AA27
B
28
C
29
D
30
E
F
G
H
J
50
51
52
W
A
B
D
X
Y
Z
B
C
D
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
16 mm
8 mm
FEED D I R ECTION
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Ø 13"
16mm
NOTE S :
1. TAPE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541.
Page 9
TSSOP-8 Package Outline
IRF7754
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/01
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