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l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for,
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
provides the de-
PD - 94002
IRF7751
HEXFET® Power MOSFET
V
DSS
-30V 35mΩ@VGS = -10V -4.5A
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
R
DS(on)
max I
55mΩ@VGS = -4.5V -3.8A
8
7
6
5
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -4.5
ID @ TC = 70°C Continuous Drain Current, VGS @ -10V -3.6 A
I
DM
PD @TC = 25°C Power Dissipation 1.0
PD @TC = 70°C Power Dissipation 0.64
V
GS
T
J, TSTG
Drain-Source Voltage -30 V
Pulsed Drain Current -18
W
Linear Derating Factor 0.008 W/°C
Gate-to-Source Voltage ±20 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 125 °C/W
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10/04/2000
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IRF7751
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.020 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 35 VGS = -10V, ID = -4.5A
––– ––– 55 VGS = -4.5V, ID = -3.8A
mΩ
Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
Forward Transconductance 6.8 ––– –– – S VDS = -10V, ID = -4.5A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -15 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 29 44 ID = -4.5A
Gate-to-Source Charge ––– 5.5 ––– nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 5.0 ––– VGS = -10V
Turn-On Delay Time ––– 13 20 VDD = -15V
Rise Time ––– 16 24 ID = -1.0A
Turn-Off Delay Time ––– 155 233 RG = 6.0Ω
ns
Fall Time ––– 80 120 VGS = -10V
Input Capacitance ––– 1464 ––– VGS = 0V
Output Capacitance ––– 227 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 146 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
-1.0
––– ––– -18
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V
Reverse Recovery Time ––– 23 35 ns TJ = 25°C, IF = -1.0A
Reverse RecoveryCharge ––– 19 28 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
Page 3
IRF7751
100
10
1
-2.7V
0.1
, Drain-to-Source Current (A)
D
-I
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP -10.0V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
BOTTOM -2.7V
100
10
-2.7V
1
, Drain-to-Source Current (A)
D
-I
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
-4.5A
I =
D
VGS
TOP -10.0V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
BOTTOM -2.7V
1.5
°
10
D
-I , Drain-to-Source Current (A)
0.1
T = 150 C
J
°
T = 25 C
J
1
V = -15V
DS
20µs PULSE WIDTH
2.0 3.0 4.0 5.0 6.0
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-10V
Vs. Temperature
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IRF7751
4000
3200
2400
1600
C, Capacitance (pF)
800
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
14
I =
-4.5A
D
V =-24V
12
10
8
6
4
GS
2
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40
Q , Total Gate Charge (nC)
G
DS
V =-15V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
10
1
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig 7. Typical Source-Drain Diode
J
°
T = 25 C
J
V = 0 V
GS
-V ,Source-to-Drain Voltage (V)
SD
10
1
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
Forward Voltage
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IRF7751
5.0
4.0
3.0
2.0
D
-I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
R
D.U.T.
D
-
+
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
100
thJA
D = 0.50
0.20
0.10
10
0.05
P
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7751
0.100
)
Ω
0.080
0.060
ID = -4.5A
0.040
, Drain-to -Source On Resistance (
DS(on)
R
0.020
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.200
)
Ω
0.150
0.100
VGS = -4.5V
0.050
, Drain-to-Source On Resistance (
DS ( on )
R
0.000
0 10203040
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
VGS = -10V
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
10 V
Q
G
Q
GS
V
G
Q
GD
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
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Page 7
TSSOP-8 Package Outline
IRF7751
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Page 8
IRF7751
TSSOP-8 Tape and Reel Information
8 mm
FEED DIRECTION
TSSOP-8 Part Marking
EXAMPLE: THIS IS AN IRF7702
LOT CODE (XX)
PART NUMBER
DATE CODE E XAM PLES:
9503 = 5C
9532 = EF
XXYW
7702
16 mm
Ø 13"
NOTES:
1. TAPE & REEL OUTLINE CONFORMS TO EIA-481 & EIA-541.
DATE CODE (YW)
TABLE 1
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000 K
WORK
Y WEEK
1
01
2
02
3C03
404
5
6
7
8
9
0
24
25
TABLE 2
WORK
Y
W EEK26W
AA27
B
28
C
29
D
30
E
F
G
H
J
50
51
52
W
A
B
D
X
Y
Z
B
C
D
X
Y
Z
16mm
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Data and specifications subject to change without notice. 10/00
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