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l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
provides thedesigner
PD -93996
IRF7707
HEXFET® Power MOSFET
V
DSS
-20V 22mΩ@VGS = -4.5V -7.0A
1
2
3
G
4
1 = D
2 = S
3 = S
4 = G
R
max I
DS(on)
33mΩ@VGS = -2.5V -6.0A
8
D
7
6
S
5
8 = D
7 = S
6 = S
5 = D
TSSOP-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -7.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -5.7 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 1.5 W
PD @TA = 70°C Maximum Power Dissipation 1.0 W
Linear Derating Factor 0.01 W/°C
V
GS
TJ , T
STG
Drain-Source Voltage -20 V
Pulsed Drain Current -28
Gate-to-Source Voltage ±12 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 83 °C/W
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10/04/00
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IRF7707
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -20 –– – –– – V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.012 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 14.3 22 VGS = -4.5V, ID = -7.0A
––– 18.9 33 VGS = -2.5V, ID = -6.0A
mΩ
Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 15 ––– ––– S VDS = -10V, ID = -7.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 31 47 ID = -7.0A
Gate-to-Source Charge ––– 6.4 ––– nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 10 ––– VGS = -4.5V
Turn-On Delay Time ––– 11 17 VDD = -10V
Rise Time ––– 54 81 ID = -1.0A
Turn-Off Delay Time ––– 134 201 RG = 6.0Ω
ns
Fall Time ––– 138 207 VGS = -4.5V
Input Capacitance ––– 2361 ––– VGS = 0V
Output Capacitance ––– 5 12 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 323 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
–––
–––
-1.5
-28
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V
Reverse Recovery Time ––– 142 213 ns TJ = 25°C, IF = -1.5A
Reverse Recovery Charge ––– 147 221 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10sec.
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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D
S
Page 3
IRF7707
100
10
1
, Drain-to-Source Current (A)
D
-I
-1.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP -7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
100
10
-1.5V
1
, Drain-to-Source Current (A)
D
-I
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
-7.0A
I =
D
VGS
TOP -7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
1.5
°
T = 150 C
J
10
°
T = 25 C
J
D
-I , Drain-to-Source Current (A)
V = -15V
DS
1
1.0 1.5 2.0 2.5 3.0 3.5 4.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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IRF7707
3500
2800
2100
1400
C, Capacitance (pF)
700
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =
-7.0A
D
8
6
4
2
GS
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60
Q , Total Gate Charge (nC)
G
V =-16V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
10
SD
-I , Reverse Drain Current (A)
0.1
J
°
T = 25 C
J
1
V = 0 V
GS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
100us
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF7707
8.0
6.0
4.0
D
-I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D =t / t
2. Peak T = P x Z + T
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7707
0.120
)
0.080
0.040
, Drain-to -Source On Resistance (Ω
DS(on)
R
0.000
2.0 3.0 4.0 5.0 6.0 7.0 8.0
-V
GS,
ID = -7.0A
Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.200
)
Ω
0.150
0.100
VGS = -2.5V
0.050
, Drain-to-Source On Resistance (
DS ( on )
R
0.000
0 1020304050
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
VGS = -4.5V
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
10 V
Q
G
Q
GS
V
G
Q
GD
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
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EXAMPLE: THIS IS AN IRF7702
TSSOP-8 Part Marking Information
IRF7707
LOT CODE (XX)
PART NUMBER
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
XXYW
7702
DATE CODE (YW)
TABLE 1
W ORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
WORK
YWEEK
YEAR
1
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000 K
01
2
02
3C03
404
5
6
7
8
9
24
0
25
TABLE 2
WORK
Y
WEE K26W
AA27
B
28
C
29
D
30
E
F
G
H
J
50
51
52
W
A
B
D
X
Y
Z
B
C
D
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
16 mm
8 mm
FEED D I R ECTION
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Ø 13"
16mm
NOTE S :
1. TAPE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541.
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IRF7707
TSSOP-8 Package Outline
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
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