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l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.2mm)
l Available in Tape & Reel
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for,
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
provides the de-
PD - 94001A
IRF7705
HEXFET® Power MOSFET
V
DSS
R
DS(on)
max (m
-30V 18 @VGS = -10V -8.0A
30 @VGS = -4.5V -6.0A
1
2
3
4
1 = D
2 = S
3 = S
4 = G
G
8
D
7
6
S
5
8 = D
7 = S
6 = S
5 = D
Ω)Ω)
Ω) I
Ω)Ω)
TSSOP-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -8.0
ID @ TC = 70°C Continuous Drain Current, VGS @ -10V -6.0 A
I
DM
PD @TC = 25°C Power Dissipation 1.5
PD @TC = 70°C Power Dissipation 0.96
V
GS
T
J, TSTG
Drain- Source Voltage -30 V
Pulsed Drain Current -30
W
Linear Derating Factor 0.012 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 83 °C/W
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IRF7705
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– VVGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 18 VGS = -10V, ID = -8.0A
––– ––– 30 VGS = -4.5V, ID = -6.0A
mΩ
Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
Forward Transconductance 13 ––– ––– SVDS = -10V, ID = -8.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -15 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C
µA
nA
= -20V
GS
Total Gate Charge ––– 58 88 ID = -8.0A
Gate-to-Source Charge ––– 10 ––– nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 9.0 ––– VGS = -10V
Turn-On Delay Time ––– 18 27 VDD = -15V, VGS = -10V
Rise Time ––– 35 53 ID = -1.0A
Turn-Off Delay Time ––– 270 405 RD = 15Ω
ns
Fall Time ––– 128 190 RG = 6.0Ω
Input Capacitance ––– 2774 ––– VGS = 0V
Output Capacitance ––– 418 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
––– –––
-1.5
-30
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V
Reverse Recovery Time ––– 36 54 ns TJ = 25°C, IF = -1.5A
Reverse RecoveryCharge ––– 34 50 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
Page 3
IRF7705
100
10
1
-2.5V
0.1
, Drain-to-Source Current (A)
D
-I
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP -10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
100
10
-2.5V
1
, Drain-to-Source Current (A)
D
-I
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
-8.0A
I =
D
VGS
TOP -10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
1.5
10
1
D
-I , Drain-to-Source Current (A)
0.1
2.0 2.5 3.0 3.5 4.0 4.5
Fig 3. Typical Transfer Characteristics
°
T = 150 C
J
°
T = 25 C
J
V = -15V
DS
20µs PULSE WIDTH
-V , Gate-to-Source Voltage (V)
GS
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
-10V
GS
°
Vs. Temperature
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IRF7705
)
4000
3200
2400
1600
C, Capacitance (pF)
800
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
16
I =
8.0A
D
V =-24V
DS
V =-15V
12
8
4
GS
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60 70 80
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
-I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
Forward Voltage
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IRF7705
)
8.0
6.0
4.0
D
-I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
D = 0.50
0.20
thJA
10
0.10
0.05
0.02
0.01
1
Thermal Response (Z )
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec
1
J DM thJA A
P
DM
t
1
1 2
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7705
)
0.08
Ω
0.07
0.06
0.05
0.04
ID = -8.0A
0.03
, Drain-to -Source On Resistance (
0.02
DS(on)
0.01
R
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.06
Ω
0.04
VGS = -4.5V
0.02
, Drain-to-Source On Resistance (
DS ( on )
0.00
R
0 1020304050
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
VGS = -10V
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
10 V
Q
G
Q
GS
V
G
Q
GD
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
I
V
DS
+
D
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
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TSSOP-8 Part Marking Information
EXA MPLE: THIS IS A N IRF7702
IRF7705
LOT CODE (XX)
PART NUMBER
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
XXYW
7702
DATE CODE (YW)
TABLE 1
W ORK WEEK 1-26, NUMERIC YEAR CODE (1 ,2, ....ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
W ORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000 K
WORK
YWEEK
01
1
02
2
3C03
404
5
6
7
8
9
0
24
25
TABLE 2
WORK
Y
WEEK26W
AA27
B
28
C
29
D
30
E
F
G
H
J
50
51
52
W
A
B
D
X
Y
Z
B
C
D
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
16 mm
8 mm
FEED D I R ECTION
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Ø 13"
16mm
NOTE S :
1. TAPE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541.
Page 8
IRF7705
TSSOP-8 Package Outline
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
8 www.irf.com
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