Page 1
PD - 94221
IRF7703
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for,
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
provides the de-
V
DSS
R
DS(on)
max (m
Ω)Ω)
Ω) I
Ω)Ω)
-40V 28@VGS = -10V -6.0A
45@VGS = -4.5V -4.8A
1
2
3
4
1 = D
2 = S
3 = S
4 = G
G
8
D
7
6
S
5
8 = D
7 = S
6 = S
5 = D
TSSOP-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -6.0
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -4.7 A
I
DM
PD @TA = 25°C Power Dissipation 1.5
PD @TA = 70°C Power Dissipation 0.96
V
GS
T
J, TSTG
Drain- Source Voltage -40 V
Pulsed Drain Current -24
W
Linear Derating Factor 0.012 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 83 °C/W
www.irf.com 1
05/11/01
Page 2
IRF7703
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -40 ––– ––– VVGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.030 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 28 VGS = -10V, ID = -6.0A
––– ––– 45 V
mΩ
= -4.5V, ID = -4.8A
GS
Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
Forward Transconductance 10 ––– ––– SVDS = -10V, ID = -6.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -15 VDS = -32V, VGS = 0V
––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 41 62 ID = -6.0A
Gate-to-Source Charge ––– 16 25 nC VDS = -20V
Gate-to-Drain ("Miller") Charge ––– 16 24 VGS = -10V
Turn-On Delay Time ––– 43 ––– VDD = -20V
Rise Time ––– 405 ––– ID = -1.0A
Turn-Off Delay Time ––– 155 ––– RG = 6.0Ω
ns
Fall Time ––– 77 ––– VGS = -10V
Input Capacitance ––– 5220 ––– VGS = 0V
Output Capacitance ––– 416 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 337 ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
-1.5
-24
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V
Reverse Recovery Time ––– 34 51 ns TJ = 25°C, IF = -1.5A
Reverse Recovery Charge ––– 56 84 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2 www.irf.com
D
S
Page 3
IRF7703
10000
1000
100
10
1
0.1
, Drain-to-Source Current (A)
D
-I
0.01
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
-2.7V
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
100
1000
100
10
1
, Drain-to-Source Current (A)
D
-I
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
-2.7V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
-6.0A
I =
D
J
°
T = 25 C
J
1.5
°
1.0
10
T = 150 C
1
(Normalized)
0.1
D
-I , Drain-to-Source Current (A)
V = -15V
DS
0.01
2.0 2.5 3.0 3.5 4.0 4.5 5.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-10V
Vs. Temperature
www.irf.com 3
Page 4
IRF7703
100000
10000
1000
C, Capacitance(pF)
100
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
gs
gd
ds
Ciss
Crss
+ Cgd, C
+ C
gd
iss
C
rss
C
oss
Coss
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
T = 150 C
°
J
SHORTED
ds
20
I =
-6.0
D
GS
16
12
8
4
V = 32V
DS
V = 20V
DS
-V , Gate-to-Source Voltage (V)
0
0 30 60 90 120 150
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
10
100µsec
1msec
°
T = 25 C
1
SD
-I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
1
, Drain-to-Source Current (A)
D
-I
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0 1 10 100 1000
-V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10msec
Forward Voltage
4 www.irf.com
Page 5
IRF7703
(
)
6.0
4.8
3.6
2.4
D
-I , Drain Current (A)
1.2
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
0.20
10
thJC
Thermal Response (Z )
0.01
0.10
0.05
0.02
0.01
1
P
DM
SINGLE PULSE
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
THERMAL RESPONSE
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
1 2
J DM thJC C
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com 5
Page 6
IRF7703
)
0.05
Ω
0.04
ID = -6.0A
0.03
0.02
, Drain-to -Source On Resistance (
DS(on)
0.01
R
3.0 5.0 7.0 9.0 11.0 13.0 15.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.040
)
Ω
V
0.035
0.030
0.025
, Drain-to-Source On Resistance (
0.020
DS (on)
R
0.015
0 5 10 15 20 25
= -4.5V
GS
V
= -10V
GS
-ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
12V
.2µF
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
I
V
DS
+
D
6 www.irf.com
Page 7
IRF7703
3.0
2.5
ID = -250µA
2.0
Gate threshold Voltage (V)
1.5
GS(th)
-V
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
150
130
110
90
70
Power (W)
50
30
10
0.00 0.01 0.10
Time (sec)
Fig 16. Typical Power Vs. Time
www.irf.com 7
Page 8
IRF7703
TSSOP-8 Part Marking Information
EXA MPLE: THIS IS AN IRF7702
LOT CODE (XX)
PART NUMBER
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
XXYW
7702
DATE CODE (YW)
TABLE 1
W ORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
W ORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
YEAR
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000 K
WORK
YWEEK
1
01
2
02
3C03
404
5
6
7
8
9
0
24
25
TABLE 2
WORK
Y
WEE K26W
AA27
B
28
C
29
D
30
E
F
G
H
J
50
51
52
W
A
B
D
X
Y
Z
B
C
D
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
16 mm
8 mm
FEED D I R ECTION
8 www.irf.com
Ø 13"
16mm
NOTE S :
1. TAPE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541.
Page 9
TSSOP-8 Package Outline
IRF7703
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/01
www.irf.com 9
Loading...