Datasheet IRF7702 Datasheet (International Rectifier)

PD - 93849C

PROVISIONAL

IRF7702

HEXFET® Power MOSFET

l Ultra Low On-Resistance l -1.8V Rated l P-Channel MOSFET l Very Small SOIC Package l Low Profile ( < 1.1mm) l Available in Tape & Reel

Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,

provides thedesigner with an extremely efficient and reliable device for battery and load management.

The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V ±8.0 ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V ±7.0 A I

DM

PD @TC = 25°C Power Dissipation 1.5 PD @TC = 70°C Power Dissipation 0.96

V

GS

T

J, TSTG

Drain- Source Voltage -12 V

Pulsed Drain Current  ±70

Linear Derating Factor 0.01 W/°C Gate-to-Source Voltage ± 8.0 V Junction and Storage Temperature Range -55 to + 150 °C

V

DSS

R

DS(on)

max I

0.014@VGS = -4.5V -8.0A

-12V 0.019@VGS = -2.5V -7.0A

0.027@VGS = -1.8V -5.8A

1 2 3 4

1 = D 2 = S 3 = S 4 = G

G

8

D

7 6

S

5

8 = D 7 = S 6 = S 5 = D

TSSOP-8

D

W

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 83 °C/W

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6/19/00

IRF7702

PROVISIONAL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA

J

––– ––– 0.014 VGS = -4.5V, ID = -8.0A 

Static Drain-to-Source On-Resistance – – – ––– 0.019 VGS = -2.5V, ID = -7.0A 

Ω

––– ––– 0.027 VGS = -1.8V, ID = -5.8A  Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA Forward Transconductance 26 ––– ––– S VDS = -10V, ID = -8.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 8.0V

––– ––– 1.0 VDS = -12V, VGS = 0V

––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 54 81 ID = -8.0A Gate-to-Source Charge ––– 7.8 12 nC VDS = -9.6V Gate-to-Drain ("Miller") Charge ––– 15 23 VGS = -4.5V Turn-On Delay Time ––– 16 ––– VDD = -6.0V Rise Time ––– 21 ––– ID = -1.0A

ns

Turn-Off Delay Time ––– 320 –– – RD = 6.0Ω Fall Time ––– 250 ––– RG = 6.0Ω  Input Capacitance ––– 3470 ––– VGS = 0V Output Capacitance –– – 1040 ––– pF VDS = -10V Reverse Transfer Capacitance ––– 670 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

–––

-1.5

––– ––– -70

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V  Reverse Recovery Time ––– 58 87 n s TJ = 25°C, IF = -1.5A Reverse RecoveryCharge ––– 41 62 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t<10 sec

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

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D

S

PROVISIONAL

IRF7702

1000

100

10

TOP

BOTTOM

VGS

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

-1.50V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

1000

100

10

D

-I , Drain-to-Source Current (A)

TOP

BOTTOM

VGS

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

-1.50V

20µs PULSE WIDTH T = 150 C

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output Characteristics

100.00 TJ = 25°C

°

TJ = 150°C

100

°

T = 150 C

J

10.00

, Reverse Drain Current (A)

D

-I , Drain-to-Source Current (A)

10

1.5 2.0 2.5 3.0 3.5

-V , Gate-to-Source Voltage (V)

GS

°

T = 25 C

J

V = -15V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

SD

-I

V

= 0V

GS

1.00

0.0 1.0 2.0 3.0 4.0 5.0 6.0

-VSD, Source-toDrain Voltage (V)

Fig 4. Typical Source-Drain Diode

Forward Voltage

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IRF7702

PROVISIONAL

5000

4000

3000

2000

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

f = 1MHz

C

+ C C C

+ C

C

iss

C SHORTED

C, Capacitance (pF)

1000

0

1 10 100

-V , Drain-to-Source Voltage (V)

DS

C

oss

C

rss

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

0.80

10

I =

-8.0A

D

V =-9.6V

DS

8

6

4

2

GS

-V , Gate-to-Source Voltage (V)

0

0 20 40 60 80

Q , Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

ID = -250µA

0.60

, Variace ( V )

0.40

GS(th)

-V

0.20

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 7. Threshold Voltage Vs. Temperature

100

100us

10

D

-I , Drain Current (A)I , Drain Current (A)

°

= 25 C

A

T T= 150 C Single Pulse

1

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

1ms

10ms

Fig 8. Maximum Safe Operating Area

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PROVISIONAL

IRF7702

8.0

6.0

4.0

D

-I , Drain Current (A)

2.0

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

40

30

20

Power (W)

10

0

°

0.01 0.10 1.00 10.00 100.00

Time (sec)

Fig 10. Typical Power Vs. Time

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7702

PROVISIONAL

2.0

1.5

1.0

I =

D

-8.0A

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 12. Normalized On-Resistance

Vs. Temperature

)

0.020

Ω

V =

GS

°

-4.5V

)

0.20

Ω

0.16

0.12

V

= -2.5V

0.08

, Drain-to-Source On Resistance (

0.04

DS (on)

R

0.00 0 20406080100

GS

V

= -4.5V

GS

-ID , Drain Current (A)

Fig 13. Typical On-Resistance Vs. Drain

Current

ID = -8.0A

0.015

, Drain-to -Source On Resistance (

DS(on)

0.010

R

1.5 2.5 3.5

-V

Gate -to -Source Voltage (V)

GS,

Fig 14. Typical On-Resistance Vs. Gate

Voltage

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PROVISIONAL

EXAMPLE: TH IS IS AN IRF7702

TSSOP-8 Part Marking Information

IRF7702

LOT CODE (XX)

PART NUMBER

DATE CODE EXAMPLES:

9503 = 5C 9532 = EF

XXYW

7702

DATE CODE (YW)

TABLE 1

W ORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)

WORK

YWEEK

YEAR

1

2001 2002 2003 1994 1995 1996 1997 1998 1999 2000

WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)

YEAR 2001

2002 2003 1994 1995 1996 1997 1998 1999 2000 K

01

2

02 3C03 404 5 6 7 8 9

24

0

25

TABLE 2

WORK

Y

WEEK26W

AA27 B

28 C

29 D

30 E F G H J

50

51

52

W A

B

D

X Y Z

B C D

X Y Z

TSSOP-8 Tape and Reel

8LT SSOP (MO-153AA)

16 mm

8 mm

FEED D I R ECTIO N

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Ø 13"

16mm

NOTE S :

1. TAPE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541.

IRF7702

TSSOP-8 Package Outline

PROVISIONAL

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 6/00

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