Datasheet IRF7700 Datasheet (International Rectifier)

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel

Description

HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex­tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter­national Rectifier is well known for,

signer with an extremely efficient and reliable device
for use in battery and load management.

The TSSOP-8 package, has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such

as portable electronics and PCMCIA cards.

provides the de-

PD - 93894A

IRF7700

HEXFET® Power MOSFET

V

DSS

-20V 0.015@VGS = -4.5V -8.6A

1
2
3

G

4

1 = D
2 = S
3 = S
4 = G

R

max I

DS(on)

0.024@VGS = -2.5V -7.3A

8

D

7
6

S

5

8 = D
7 = S
6 = S
5 = D

TSSOP-8

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V ±8.6
ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V ±6.8 A
I

DM

PD @TC = 25°C Power Dissipation 1.5
PD @TC = 70°C Power Dissipation 0.96

V

GS

T

J, TSTG

Drain- Source Voltage -20 V

Pulsed Drain Current  ±68

W

Linear Derating Factor 0.01 W/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 83 °C/W

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6/19/00

IRF7700

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– – –– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.015 VGS = -4.5V, ID = -8.6A 
––– ––– 0.024 VGS = -2.5V, ID = -7.3A 

Ω

Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance -20 ––– ––– S VDS = -10V, ID = -8.6A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge – – – 59 89 ID = -8.6A
Gate-to-Source Charge ––– 10 15 nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 19 29 VGS = -5.0V
Turn-On Delay Time ––– 19 ––– VDD = -10V
Rise Time ––– 40 ––– ID = -1.0A
Turn-Off Delay Time ––– 120 ––– RG = 6.0Ω

ns

Fall Time ––– 130 ––– VGS = -4.5V
Input Capacitance ––– 4300 ––– VGS = 0V
Output Capacitance ––– 880 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 580 ––– ƒ = TBDkHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– –––

-1.5

––– ––– -68

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V 
Reverse Recovery Time ––– 130 200 ns TJ = 25°C, IF = -1.5A
Reverse RecoveryCharge ––– 180 270 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t<10 sec

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

2 www.irf.com

D

S

IRF7700

100

10

D

-I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

-15V

-10V

-4.5V

-3.0V

-2.7V

-2.5V

-2.25V

BOTTOM

-2.0V

-2.0V

20µs PULSE WIDTH
T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100

)

(Α

TJ = 25°C

100

TOP

BOTTOM

VGS

-15V

-10V

-4.5V

-3.0V

-2.7V

-2.5V

-2.25V

-2.0V

-2.0V

10

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 150 C

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output Characteristics

2.0

1.5

I =

D

4.1A

TJ = 150°C

1.0

(Normalized)

, Drain-to-Source Current

D

-I

10

2.0 2.4 2.8 3.2

V

= -15V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

4.5V

Vs. Temperature

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IRF7700

2000

1600

1200

800

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

C

iss

f = 1MHz

C

+ C
C
C

+ C

C SHORTED

C, Capacitance (pF)

400

0

1 10 100

C

oss

C

rss

-V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

I =

-4.1A

D

V =-16V

8

6

4

2

GS

-V , Gate-to-Source Voltage (V)

0

0 4 8 12 16 20 24

Q , Total Gate Charge (nC)

G

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

100

10

°

T = 150 C

J

1

°

T = 25 C

SD

-I , Reverse Drain Current (A)

0.1

0.0 0.5 1.0 1.5 2.0

-V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

10

D

-I , Drain Current (A)I , Drain Current (A)

1

°

= 25 C

C

T T= 150 C
Single Pulse

0.1

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

10us

100us

1ms

10ms

Forward Voltage

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IRF7700

5.0

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0
25 50 75 100 125 150

T , Case Temperature ( C)

C

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

D.U.T.

D

-

+

V

DD

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

t

d(on)tr

V

GS

10%

°

90%
V

DS

t

d(off)tf

Fig 10b. Switching Time Waveforms

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7700

)

0.026

Ω

0.022

0.018

ID = -8.6A

0.014

, Drain-to -Source On Resistance (

DS(on)

0.010

R

2.0 4.0 6.0 8.0 10.0

-V

Gate -to -Source Voltage (V)

GS,

Fig 11. Typical On-Resistance Vs. Gate

Voltage

)

0.06

Ω

0.04

V

= -2.5V

GS

0.02

, Drain-to-Source On Resistance (

V

= -4.5V

GS

DS (on)

R

0.00
0 20406080

-ID , Drain Current (A)

Fig 12. Typical On-Resistance Vs. Drain

Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

12V

.2µF

V

GS

.3µF

D.U.T .

-3mA

I

G

Current Sampling Resistors

­V

DS

+

I

D

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IRF7700

0.90

0.80

0.70

ID = -250µA

0.60

, Variace (V)

0.50

GS(th)

-V

0.40

0.30

-50 0 50 100 150

TJ , Temperature (°C)

Fig 14. Threshold Voltage Vs. Temperature

60

50

40

30

Power (W)

20

10

0

0.01 0.10 1.00 10.00 100.00

Time (sec)

Fig 15. Typical Power Vs. Time

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IRF7700

EXAMPLE: THIS IS AN IRF7702

TSSOP-8 Part Marking Information

LOT CODE (XX)

PART NUMBER

DATE CODE EXAMPLES:

9503 = 5C
9532 = EF

XXYW

7702

DATE CODE (YW)

TABLE 1

W ORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)

WORK

YWEEK

YEAR

1

2001
2002
2003
1994
1995
1996
1997
1998
1999
2000

W ORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)

YEAR
2001

2002
2003
1994
1995
1996
1997
1998
1999
2000 K

01

2

02
3C03
404
5
6
7
8
9

24

0

25

TABLE 2

WORK

Y

WEEK26W

AA27
B

28
C

29
D

30
E
F
G
H
J

50

51

52

W
A

B

D

X
Y
Z

B
C
D

X
Y
Z

TSSOP-8 Tape and Reel

8LT SSOP (MO-153AA)

16 mm

8 mm

FEED D I R ECTION

8 www.irf.com

Ø 13"

16mm

NOTE S :

1. TAPE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541.

TSSOP-8 Package Outline

IRF7700

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: [phone]

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: [phone]

Data and specifications subject to change without notice. 6/00

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