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PD - 93845
A
PROVISIONAL
● Trench Technology
● Ultra Low On-Resistance
● N-Channel MOSFET
● Very Small SOIC Package
● Low Profile (<1.1mm)
● Available in Tape & Reel
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
S
S
S
1
2
3
4
Top View
IRF7607
HEXFET® Power MOSFET
A
8
D
V
= 20V
R
DS(on)
DSS
= 0.030Ω
7
D
6
D
5
DG
Micro8
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.5
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.2 A
I
DM
PD @TA = 25°C Power Dissipation 1.8
PD @TA = 70°C Power Dissipation 1.2
V
GS
T
J, TSTG
Drain- Source Voltage 20 V
Pulsed Drain Current 50
W
Linear Derating Factor 0.014 W/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 70 °C/W
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IRF7607
PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.030 VGS = 4.5V, ID = 6.5A
––– ––– 0.045 VGS = 2.5V, ID = 5.2A
Ω
Gate Threshold Voltage 0.60 ––– 1.0 V VDS = VGS, ID = 250µA
Forward Transconductance 13 ––– ––– S VDS = 10V, ID = 6.5A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 1 00 VGS = 12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 15 2 2 ID = 6.5A
Gate-to-Source Charge ––– 2.2 3.3 nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 3.5 5.3 VGS = 5.0V
Turn-On Delay Time ––– 8.5 ––– VDD = 10V
Rise Time ––– 11 ––– ID = 1.0A
Turn-Off Delay Time ––– 36 ––– RG = 6.0Ω
ns
Fall Time ––– 16 ––– RD = 10Ω
Input Capacitance ––– 1310 –– – VGS = 0V
Output Capacitance ––– 150 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 36 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
1.8
50
A
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V
Reverse Recovery Time ––– 19 29 n s TJ = 25°C, IF = 1.7A
Reverse Recovery Charge ––– 13 20 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. (See fig. 11)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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D
S
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PROVISIONAL
IRF7607
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
100
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM
1.50V
1.50V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
1.50V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
5.3A
°
T = 25 C
10
J
°
T = 150 C
J
1.5
1.0
(Normalized)
0.5
D
I , Drain-to-Source Current (A)
V = 15V
DS
1
1.5 2.0 2.5 3.0 3.5
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
4.5V
Vs. Temperature
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IRF7607
PROVISIONAL
2000
1600
1200
800
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
f = 1MHz
C
+ C
C
C
+ C
C
iss
C SHORTED
C, Capacitance (pF)
400
C
oss
C
0
1 10 100
V , Drain-to-Source Voltage (V)
DS
rss
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
GS
V , Gate-to-Source Voltage (V)
6.5A
I =
5.3A
D
V = 10V
DS
8
6
4
2
0
0 4 8 12 16 20 24
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
°
T = 150 C
J
10
1ms
1
°
T = 25 C
J
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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PROVISIONAL
IRF7607
6.0
5.0
4.0
3.0
2.0
D
I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
0.20
0.10
0.00
Id = 250µA
-0.10
, Variace ( V )
-0.20
GS(th)
V
-0.30
-0.40
-50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
P
1 2
DM
t
1
t
2
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJA A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7607
PROVISIONAL
0.040
)
Ω
0.035
0.030
, Drain-to -Source Voltage (
0.025
DS(on)
R
0.020
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
GS,
Id = 5.3A
Gate -to -Source Voltage ( V )
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.10
Ω
0.08
0.06
0.04
( on) , Drain-to-Source On Resistance (
DS
0.02
R
0 10 20 30 40
VGS= 2.5V
ID, - Drain Current (A )
Fig 13. Typical On-Resistance Vs.
Drain Current
VGS = 4.5V
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PROVISIONAL
IRF7607
Micro8
Package Outline
Dimensions are shown in millimeters (inches)
D
3
- B -
3
- A -
- C B 8 X
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
8 7 6 5
E
1 2 3 4
e
6X
e 1
A
A 1
0.0 8 (.0 0 3 ) M C A S B S
H
0.2 5 (.01 0 ) M A M
0.10 (.004)
LEAD ASSIGNMEN TS
D D D D D1 D1 D2 D2
8 7 6 5
SINGLE
1 2 3 4
S S S G
θ
8 7 6 5
DUAL
1 2 3 4
S1 G1 S2 G2
L
8X
8X
IN CHE S M IL L IM ETE R S
DIM
M IN M A X M IN M AX
A .0 3 6 .0 4 4 0.91 1 .1 1
A1 .0 0 4 .0 0 8 0.10 0 .2 0
B .0 1 0 .0 1 4 0.25 0 .3 6
C .005 .007 0.13 0.18
D .116 .120 2.95 3.05
e .0256 BASIC 0.65 BASIC
e1 .0128 BASIC 0.33 BASIC
E .1 1 6 .1 2 0 2.95 3 .0 5
H .188 .198 4.78 5 .03
L .0 1 6 .0 26 0 .4 1 0 .6 6
0 ° 6° 0° 6 °
θ
RECOMMENDED FOOTPRINT
1.04
( .041 )
C
8X
3.20
( .126 )
0.38
( .015 )
4.24
( .167 )
0.65
( .0256 )
8X
6X
5.28
( .208 )
Micro8
EXAMPLE : THIS IS AN IRF7501
Part Marking Information
DATE CO DE (YW W)
Y = LAST D IGIT OF YEAR
W W = WEEK
451
7501
PART NUMBER
TOP
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A
Page 8
IRF7607
PROVISIONAL
Micro8
Tape & Reel Information
Dimensions are shown in millimeters (inches)
T ERM IN A L NUM B ER 1
8.1 ( .318 )
7.9 ( .312 )
NOT ES:
1. OUTLINE CONFOR M S TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIME TER.
12.3 ( .484 )
11.7 ( .461 )
FEED DIRECTION
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE C O NFO R MS TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
Data and specifications subject to change without notice. 1/2000
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