Datasheet IRF7601 Datasheet (International Rectifier)

l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

S S

S

2

3

4

Top View

PD - 9.1261D

IRF7601

HEXFET® Power MOSFET

A

81

D

V

= 20V

R

DS(on)

DSS

= 0.035Ω

7

D

6

D

5

DG

The new Micro8 package, with half the footprint area of the

Micro8

standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.7 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.6 A I

DM

PD @TA = 25°C Power Dissipation 1.8 W

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J, TSTG

Pulsed Drain Current  30

Linear Derating Factor 14 mW/°C Gate-to-Source Voltage ± 12 V

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

Maximum Junction-to-Ambient ––– 70 °C/W

8/25/97

IRF7601

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.024 –– – V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.035 VGS = 4.5V, ID = 3.8A  ––– ––– 0.050 VGS = 2.7V, ID = 1.9A 

Ω

Gate Threshold Voltage 0.70 ––– – –– V VDS = VGS, ID = 250µA Forward Transconductance 6.1 ––– – –– S VDS = 10V, ID = 1.9A

Drain-to-Source Leakage Current Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V

––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C

µA

nA

Total Gate Charge ––– 14 22 ID = 3.8A Gate-to-Source Charge ––– 2.0 3.0 nC VDS = 16V Gate-to-Drain ("Miller") Charge ––– 6.3 9.5 VGS = 4.5V, See Fig. 6 and 9  Turn-On Delay Time ––– 5.1 ––– VDD = 10V Rise Time ––– 47 ––– ID = 3.8A Turn-Off Delay Time ––– 24 ––– RG = 6.2Ω

ns

Fall Time ––– 32 ––– RD = 2.6Ω, See Fig. 10  Input Capacitance ––– 650 ––– VGS = 0V Output Capacitance ––– 300 ––– p F VDS = 15V Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 I

≤ 3.8A, di/dt ≤ 96A/µs, V

SD

TJ ≤ 150°C

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

––– ––– 1.8

––– ––– 30

Diode Forward Voltage ––– – –– 1.2 V TJ = 25°C, IS = 3.8A, VGS = 0V  Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 3.8A Reverse RecoveryCharge ––– 69 100 nC di/dt = 100A/µs

DD

≤ V

(BR)DSS

,

A

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Surface mounted on FR-4 board, t



≤ 10sec.

D

G

S

IRF7601

100

VGS TOP 7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V BOTT OM 1.5V

10

1

D

I , D rain-to-Sou rce C urrent (A )

20µs PULSE WIDT H

1.5V T = 25 °C

0.1

0.1 1 10

V , Dra in-to-So urc e V oltag e (V)

DS

J

Fig 1. Typical Output Characteristics

100

VGS TOP 7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V BOTT OM 1.5V

10

1

D

I , D rain-to-Sou rce C urrent (A )

1.5V

20µs PULSE WIDT H T = 150°C

A

0.1

0.1 1 10

V , Dra in-to-So urc e V oltag e (V)

DS

J

A

Fig 2. Typical Output Characteristics

2.0

I = 3.8 A

D

10

T = 150°C

J

T = 25°C

1

D

I , Dr a in-to - Sou r ce C u rr en t ( A)

0.1

1.5 2.0 2.5 3.0 3.5

J

V = 10 V

DS

20µs PULSE W IDTH

V , Ga te-to-So urce Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.5

1.0

(N o rm a lized)

0.5

DS(on)

R , D rain-to -S ou rce O n R e sis tan ce

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Ju nc tion Te m perat u re ( °C )

J

V = 4 .5V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF7601

1200

1000

800

600

400

C, C apac itance (pF)

200

0

1 10 100

V = 0 V , f = 1M Hz

GS

C = C + C , C S HOR TE D

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C

rs s

V , Dr ain-to-S ou rce V olta ge ( V )

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

I = 3.8A

D

V = 1 6V

DS

8

6

4

2

GS

V , G a te-to- Sou rc e V o ltag e (V )

FOR TEST CIRCUIT

A

0

0 4 812162024

Q , Tota l Gate Ch arge (nC)

G

SEE FIGURE 9

A

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

O PER AT ION IN T HIS AREA LIMI TED BY R

DS(on)

10

T = 150°C

J

T = 25°C

J

1

SD

I , Rev ers e Dr ain C u rren t (A)

0.1

0.4 0.8 1.2 1.6 2.0 2.4

V , Sour c e-to-D rain Voltage ( V)

SD

V = 0V

Fig 7. Typical Source-Drain Diode

Forward Voltage

GS

10

D

I , Dra in C ur rent (A )

T = 25°C

A

T = 150°C

J

A

Single Pulse

1

0.1 1 10 100

V , Drain-to-So urc e Vo ltag e (V)

DS

100µs

1ms

10ms

A

Fig 8. Maximum Safe Operating Area

+

-

4.5V

IRF7601

R

D.U.T.

D

V

DD

V

Q

G

Q

GS

V

G

Q

GD

R

G

DS

V

GS

4.5V

Pulse Width ≤ 1 µs

Charge

Duty Factor ≤ 0.1 %

Fig 9a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T .

3mA

I

G

Current Sampling Resistors

I

D

Fig 9b. Gate Charge Test Circuit

100

D = 0.50

thJA

10

0.20

0.10

0.05

Fig 10a. Switching Time Test Circuit

V

DS

90%

+

V

DS

-

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

0.02

1

0.01

Thermal Response (Z )

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

J DM thJA A

1 2

P

DM

t

1

t

2

IRF7601

+

-

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

controlled by Duty Factor "D"

• I

SD

• D.U.T. - Device Under Test

Period

-

D =



G

Period

P.W.

+

V

DD

VGS=10V

*

Reverse Recovery Current

Re-Applied Voltage

D.U.T. ISDWaveform

Body Diode Forward

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

Fig 12. For N-Channel HEXFETS

Current

di/dt

Diode Recovery

dv/dt

V

DD

I

SD

Package Outline

Micro8 Outline

Dimensions are shown in millimeters (inches)

IRF7601

D

3

- B -

3

- A -

- C B 8X

NOTES: 1 DIM E N SIONING AND TO LER AN C ING PER AN SI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIME N S IO NS DO NO T INCL UDE MO LD F L A S H.

8 7 6 5

E

0.25 (.010) M A M

1 2 3 4

e

6X

e 1

A

A 1

0.08 ( .0 0 3) M C A S B S

Part Marking Information

H

0. 10 (.00 4)

LEAD ASSIGNM EN TS

D D D D D1 D1 D2 D2

8 7 6 5 8 7 6 5

SINGLE

1 2 3 4

S S S G

θ

L

8X

DUAL

1 2 3 4

S1 G1 S2 G2

8X

IN C H E S M ILLIM E T E R S

DIM

M IN M AX M IN M AX A .036 .044 0.91 1.11 A1 .004 .008 0.10 0.20 B .010 .014 0.25 0.36 C .005 .007 0.13 0.18 D .116 .120 2.95 3.05 e .0256 BASIC 0.65 BASIC e1 .0128 BASIC 0.33 BASIC E .116 .120 2.95 3.05 H .188 .198 4.78 5.03 L .016 .026 0.41 0.66

θ

0 ° 6 ° 0° 6 °

RECOMMENDED FOOTPRINT

1.04 ( .041 )

C

8 X

3.20 ( .126 )

0.38 ( .015 )

4. 2 4 ( .167 )

0 . 6 5 ( .0256 )

6X

8X

5.28 ( .208 )

Micro8

EX AMP LE : TH IS IS AN IRF7501

PART NUM BER

451 7501

TOP

DATE CODE (YW W )

A

Y = LA ST D IG IT O F YE AR W W = WEEK

IRF7601

Tape & Reel Information

Micro8

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NO T ES:

1. OUTLINE CONFORMS TO EIA-481 & EIA-541.

2. CONTROLLING DIMENSION : MILLIME TER.

330.00 (12.992) MAX.

NOTES :

1. CONTROLLING DIMENSION : MILLIM ETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/ Data and specifications subject to change without notice. 8/97